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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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2020-04

P.1

[Cover] Journal of Semiconductor Technology and Science(JSTS), Volume 20, Number 2, April 2020

편집부(Editor)
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P.135

[SPECIAL ISSUE] Normal-stress Semiconductor Sensor Using a Combined Square-shaped van der Pauw Structure

Chun-Hyung Cho; Jonghoek Kim; Hyuk-Kee Sung
https://doi.org/10.5573/JSTS.2020.20.2.135
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P.141

[SPECIAL ISSUE] Filter-free AlGaN Photodiode with High Quantum Efficiency for Partial Discharge Detection

Thu Thi Thuy Pham; June-Heang Choi; Chun-Hyung Cho; Ho-Young Cha
https://doi.org/10.5573/JSTS.2020.20.2.141
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P.145

[SPECIAL ISSUE] Investigation of Modified 1T DRAM with Twin Gate Tunneling Field Effect Transistor for Improved Retention Characteristics

Dong Chang Han; Deok Jin Jang; Jae Yoon Lee; Seongjae Cho; Il Hwan Cho
https://doi.org/10.5573/JSTS.2020.20.2.145
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P.151

[SPECIAL ISSUE] Charge Migration Analysis of 3D SONOS NAND Flash Memory Using Test Pattern

Jun-Kyo Jeong; Jae-Young Sung; Hee-Hoon Yang; Hi-Deok Lee; Ga-Won Lee
https://doi.org/10.5573/JSTS.2020.20.2.151
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P.158

[SPECIAL ISSUE] Study on the Nonlinear Output Characteristic of Tunnel Field-effect Transistor

Jang Hyun Kim; Sangwan Kim
https://doi.org/10.5573/JSTS.2020.20.2.158
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P.163

[SPECIAL ISSUE] Mobility Improvement of Amorphous Indium-gallium-zinc Oxide Thin Film Transistor by Roll-to-roll Compatible Plasma Treatment

Byung-Jun Jeong; Jun-Kyo Jeong; Yu-Min Song; Hi-Deok Lee; Ho-Suk Choi; Ga-Won Lee
https://doi.org/10.5573/JSTS.2020.20.2.163
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P.170

[SPECIAL ISSUE] High Performance NO2 Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier

Cuong Van Nguyen; Hyungtak Kim
https://doi.org/10.5573/JSTS.2020.20.2.170
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P.177

[REGULAR PAPER] Design Method for Active-shunt-feedback Type Inductorless Low-noise Amplifiers in 65-nm CMOS

Toshiyuki Inoue; Akira Tsuchiya; Keiji Kishine
https://doi.org/10.5573/JSTS.2020.20.2.177
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P.187

[REGULAR PAPER] Development of Low-power Low-noise CMOS LNA for 24-GHz Automotive Radar

Murod Kurbanov; Jee-Youl Ryu
https://doi.org/10.5573/JSTS.2020.20.2.187
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