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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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Journal Archive

2025-06

P.199

A Novel Self-aligned Processing for Doubling the Integration Density of 3D NAND Flash Memory

(Yun-Jae Oh) ; (Yunejae Suh) ; (So Won Son) ; (Seongjae Cho) ; (Daewoong Kang) ; (Il Hwan Cho)
https://doi.org/10.5573/JSTS.2025.25.3.199
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P.206

1.8 mW, 4-8 GHz Bandwidth Mixer with Bleeding Transistors for Superconducting Qubit Read-out

(Seunghyeon Baek) ; (Hyeonsik Ahn) ; (Muhammad Fakhri Mauludin) ; (Youngwoo Ji) ; (Jusung Kim)
https://doi.org/10.5573/JSTS.2025.25.3.206
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P.213

Metal Oxide Resistive Memory Modeling with Physical Current Equation

(Gyunseok Ryu) ; (Jongwon Lee) ; (Myounggon Kang)
https://doi.org/10.5573/JSTS.2025.25.3.213
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P.218

Design of a Floating-bulk NMOS Triggered GGNMOS with Low Triggering Voltage and High Robustness Aimed at 3.3 V I/O ESD Protection

(Haotian Chen) ; (Yang Wang) ; (Hongjiao Yang) ; (Liqiang Ding) ; (Wei Liu) ; (Jun Deng) ; (Fengfeng Zhou) ; (Beibei Nie)
https://doi.org/10.5573/JSTS.2025.25.3.218
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P.228

An Entropy Model for GPU Register Compression

(Minsik Kim) ; (Yunho Oh) ; (Won Woo Ro)
https://doi.org/10.5573/JSTS.2025.25.3.228
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P.236

A BJT-based CMOS Temperature Sensor With a ±0.94?C 3σ -inaccuracy From ?40?C to +150?C

(Tae-June Park) ; (Jun-Ho Boo) ; (Jae-Geun Lim) ; (Hyoung-Jung Kim) ; (Jae-Hyuk Lee) ; (Seong-Bo Park) ; (Won-Jun Cho) ; (Gil-Cho Ahn)
https://doi.org/10.5573/JSTS.2025.25.3.236
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P.245

XCNet: Enhancing Defect Detection in Sensor Boards Through Data Quality Analysis and Convolutional Neural Networks

(Sachin Ranjan) ; (Hoon Kim)
https://doi.org/10.5573/JSTS.2025.25.3.245
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P.257

Design of IEEE 1500-compatible Test access mechanism for Tile-based AI semiconductor with Layout Mirroring

(Dongsup Song)
https://doi.org/10.5573/JSTS.2025.25.3.257
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P.267

A 232.2nW Segmented Curvature Compensation Sub-BGR with Bandgap Core Reusing

(Seung-Hun Park) ; (Jun-Ho Boo) ; (Jae-Geun Lim) ; (Hyoung-Jung Kim) ; (Jae-Hyuk Lee) ; (Seong-Bo Park) ; (Seong-U Choi) ; (Gil-Cho Ahn)
https://doi.org/10.5573/JSTS.2025.25.3.267
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P.274

Optimization of One-transistor (1T) DRAM Using Device Parameters-dependent Zero-temperature Coefficient Point

(Kyung Hee Kim) ; (Kyeong Min Kim) ; (Yeong Hwan Kim) ; (Jong Beom Im) ; (Gyu Ho Choi) ; (In Man Kang) ; (Young Jun Yoon)
https://doi.org/10.5573/JSTS.2025.25.3.274
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