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2020-12

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[Cover] Journal of Semiconductor Technology and Science(JSTS), Vol. 20, No. 6, December 30, 2020

편집부(Editor)
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P.485

[SPECIAL ISSUE] P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process

(Won-Ho Jang) ; (Kwang-Seok Seo) ; (Ho-Young Cha)
https://doi.org/10.5573/JSTS.2020.20.6.485
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P.491

[SPECIAL ISSUE] Low-overhead Proportional-share I/O Scheduler in Multi-queue Block Layer for NVMe SSDs

(Suho Son) ; (Gijun Oh) ; (Sungyong Ahn)
https://doi.org/10.5573/JSTS.2020.20.6.491
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P.499

[REGULAR PAPER] An Ultra-low-power Mixed-mode Face Recognition Processor for Always-on User Authentication in Mobile Device

(Ji-Hoon Kim) ; (Changhyeon Kim) ; (Kwantae Kim) ; (Juhyoung Lee) ; (Hoi-Jun Yoo) ; (Joo-Young Kim)
https://doi.org/10.5573/JSTS.2020.20.6.499
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P.510

[REGULAR PAPER] Selective Annealing Effects in Asymmetric Metal-semiconductor-metal AlGaN UV Sensors

(Byeong-Jun Park) ; (Jeong-Hoon Seol) ; (Sung-Ho Hahm)
https://doi.org/10.5573/JSTS.2020.20.6.510
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P.518

[REGULAR PAPER] A 10-bit 10-MS/s Asynchronous SAR ADC with Input Offset Calibration using Capacitor DAC

(Jisu Son) ; (Young-Chan Jang)
https://doi.org/10.5573/JSTS.2020.20.6.518
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P.526

[REGULAR PAPER] A Mirrored Current-conveyor Transimpedance Amplifier in 65-nm CMOS

(Daseul Yoon) ; (Ji-Eun Joo) ; (Sung Min Park)
https://doi.org/10.5573/JSTS.2020.20.6.526
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P.533

[REGULAR PAPER] Design and Characterization of N-MCT with Low Vth Off-FET for High Current-drive Capability

(Joo-Sung Lee) ; (Chang-Sub Kwak) ; (Kun-Sik Park)
https://doi.org/10.5573/JSTS.2020.20.6.533
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P.543

[REGULAR PAPER] A 3-dimensional Modified Vernier Time-to-digital Converter for LiDAR Sensors

(Ying He) ; (Ji-Eun Joo) ; (Sung Min Park)
https://doi.org/10.5573/JSTS.2020.20.6.543
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P.552

[REGULAR PAPER] Tunneling Enhanced Structure for Improving the Performance of Ultraviolet Light-emitting Diodes

(Jinxing Wu) ; (Peixian Li) ; (Xiaowei Zhou)
https://doi.org/10.5573/JSTS.2020.20.6.552
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