| Title |
[REGULAR PAPER] Design and Characterization of N-MCT with Low Vth Off-FET for High Current-drive Capability |
| Authors |
(Joo-Sung Lee) ; (Chang-Sub Kwak) ; (Kun-Sik Park) |
| DOI |
https://doi.org/10.5573/JSTS.2020.20.6.533 |
| Keywords |
N-MCT(MOS controlled thyristor); pulse power; power device; turn-off; Vth implantation |
| Abstract |
In this paper, an N-MCT with a low threshold voltage of off-FET has been investigated by simulation and experiment. We have demonstrated the MCT with self-aligned spacer formation and recess process, which results in uniform off-FET channel length. And boron is implanted to adjust the threshold voltage of off-FETs. The threshold voltage of non-doped and proposed MCT was -1.2 V and 0.6 V, respectively. The forward blocking voltage of both MCTs was similar to 1800 V and the turn-on voltage of MCTs was 0.2 V and 0.75 V, respectively. The non-doped and proposed MCTs exhibit the same di/dt around 35.7 kA/㎲ and peak current of 2.69 kA. That is pointed out that this proposed MCT structure is promising because the current driving capability is improved without degradation of on-state characteristics. |