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  1. (Silicon Works Inc., Daejeon, Korea)
  2. (School of Electronic Engineering, Kumoh National Institute of Technology, Gumi, Gyungbuk, Korea)



Successive approximation register, analog-to-digital converter, capacitor digital-to-analog converter, input offset calibration

I. INTRODUCTION

Recently, display modules using an active matrix organic light-emitting diode (AMOLED) have been widely used for mobile and television applications (1). Unlike liquid crystal displays (LCDs) that require a backlight unit (BLU), AMOLED displays can be made very thin because they use self-emitting organic materials by applying electricity as a light emitting material. In addition, there is no need for color filters used in thin film transistor (TFT)-LCDs since AMOLEDs emit red, green, and blue light on their own without BLU. However, the threshold voltage of an AMOLED changes over time due to the aging phenomenon of the pixels. Moreover, the blue element among the red, green and blue elements of an AMLOED has a rather short lifetime, and its lifetime is easily shortened by the surrounding heat. This can result in serious problems with color fading in combination with burn-in phenomena (2). Accordingly, in order to obtain a constant brightness regardless of the usage time of an AMOLED, circuits that detect and compensate for changes in the threshold voltage are required (3,4).

For large televisions using AMOLEDs, dozens of analog-to-digital converters (ADCs) are used to sense the threshold voltage of each pixel on one panel. However, if the ADCs used in the threshold voltage sensing circuit have an arbitrary input offset, the compensation for the change in the threshold voltage of the AMOLED is not fully performed. Therefore, even though software-based algorithms are applied to eliminate mismatches between threshold voltage sensing circuits, including the input offset of ADCs, calibration for input offset mismatches between multiple ADCs is required to reduce the complexity of the display driving system.

The input offset of a typical successive approximation register (SAR) ADC using only one comparator can be calibrated by controlling the input offset of the comparator. The input offset of the comparator was controlled by adding an input stage to supply the opposite offset voltage (5). However, this requires additional analog circuits and increase the evaluation time of the comparator. In addition, offset correction methods for SAR ADCs reported in previous researches (6,7) used additional capacitors in a capacitor digital-to-analog converter (CDAC).

In this paper, a 10-bit 10-MS/s asynchronous SAR ADC is proposed for threshold voltage sensing circuits of an AMOLED. The proposed SAR ADC has a half rail-to-rail input voltage range using an attenuation capacitor in a CDAC instead of using an additional reference driver (8). The input offset calibration, which reduces input offset mismatches among multiple ADCs, is performed by using the attenuation capacitors used to control the half rail-to-rail input voltage range without additional capacitors. The proposed input offset calibration minimizes the modification of analog circuits and is performed using the normal data conversion process.

II. ASYNCHRONOUS SAR WITH INPUT OFFSET CALIBRATION USING CDAC

1. Architecture and Operation of Asynchronous SAR ADC

The proposed 10-bit 10-MS/s asynchronous SAR ADC with input offset calibration consists of a CDAC, a comparator, and a SAR logic including input offset calibration logic, as shown in Fig. 1(a). The CDAC uses basically a V$_{\mathrm{CM}}$-based switching architecture which consists of binary-weighted capacitors from C$_{8}$ to C$_{0}$ (8,9). In addition, it has an attenuation capacitor C$_{\mathrm{A}}$ so that the proposed SAR ADC has a half rail-to-rail input voltage range (8). The attenuation capacitor C$_{\mathrm{A}}$ increases the size of the CDAC, but eliminates additional reference voltages supplied to the CDAC for the implementation of the SAR ADC with a half rail-to-rail input range. Meanwhile, the voltage of V$_{\mathrm{CM}}$ is generated to be the center voltage level between V$_{\mathrm{REFT}}$ and V$_{\mathrm{REFM}}$ through

Fig. 1. Proposed asynchronous SAR ADC (a) block diagram, (b) timing diagram

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the supply of a differential analog input signal to the SAR ADC and differential operation in the CDAC.

The proposed SAR ADC basically uses an asynchronous architecture to increase the sampling rate without increasing the frequency of the external clock (8-10). The binary search operation of the SAR logic shown in Fig. 1(b) is sequentially performed by using the valid signal of the comparator, which informs the completion of the comparison in the comparator. At the rising edge of EX_CLK, which is the synchronous clock signal of the asynchronous SAR ADC, the sampling process of the asynchronous SAR ADC is completed by the signal SAMPLE. Before the sample process is complete, the signal SAMPLES, which controls the switch connecting the outputs of the two CDACs (V$_{\mathrm{DACP}}$, V$_{\mathrm{DACM}}$) to each other, transitions low before the signal SAMPLE. This is to reduce charge injection noise generated by the sample switch. After the sampling process, the data conversion process for 10-bit resolution begins. The operation of the CDAC and comparator is performed ten times asynchronously by controlling the SAR logic to convert the sampled analog signal to 10-bit binary digital data.

Fig. 2. Concept of input offset calibration for ADC

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After this data conversion process is finished, the asynchronous SAR ADC samples the new analog input signal until the next rising edge of EX_CLK. The operation sequence of the proposed asynchronous SAR ADC is independent of the duty cycle ratio of EX_CLK because the proposed asynchronous SAR ADC uses only the rising edge of EX_CLK.

The four sub-capacitors (16${\cdot}$C$_{\mathrm{U}}$, 8${\cdot}$C$_{\mathrm{U}}$, 4${\cdot}$C$_{\mathrm{U}}$, 2${\cdot}$C$_{\mathrm{U}}$) of C$_{\mathrm{A}}$ for control of the half rail-to-rail input voltage range and the 1${\cdot}$C$_{\mathrm{U}}$ (C$_{\mathrm{0b}}$) of the CDAC are controlled to perform the proposed input offset calibration. Furthermore, in the proposed input offset calibration mode, it is required that V$_{\mathrm{REFT}}$ and V$_{\mathrm{REFB}}$ having voltage levels of V$_{\mathrm{DD}}$ and V$_{\mathrm{SS}}$ are supplied as the differential analog input signals of the asynchronous SAR.

2. Input Offset Calibration using CDAC

Fig. 2 shows a graph of the transfer characteristics of the ADC. In general, the input offset error of the ADC shifts the ADC’s transfer characteristic line down or up. Therefore, if the ADC has the input offset error, the full digital code cannot be output for the full range of analog input signals. The mismatch between the two input transistors of the comparator can generate the input offset error in the SAR ADC. In addition, the input offset error of the SAR ADC can be caused by the mismatch between the two CDACs used for the differential structure of the CDAC. The proposed input offset calibration corrects the transfer line of the SAR ADC to that of the ideal ADC by controlling the attenuation capacitors in the CDAC used for the half rail-to-rail input voltage range, as shown in Fig. 2.

Fig. 3 shows block and timing diagrams for generating control signals in the SAR logic for each operation of the proposed input offset calibration. The control block for

Fig. 3. Control logic for input offset calibration (a) main block diagram, (b) timing diagram

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the input offset calibration operates in synchronization with the external clock EX_CLK when the signal CAL for activation of the input offset calibration is high, as shown in Fig. 3(a). At the first falling edge of EX_CLK after the signal CAL is applied for the input offset calibration, the signals SAMP_CAL and SAMPD_CAL are activated for the operation shown in the section A of Fig. 3(b). In the offset calibration mode, they are switched from the signals SAMP and SAMPS for the normal data conversion mode, respectively, for the signals SAMPLE and SAMPLES. In this section, the two reference voltages, V$_{\mathrm{REFT}}$ and V$_{\mathrm{REFB}}$, are applied to the two bottom nodes of the differential CDAC instead of the two analog input signals by the signal SAMP_CAL with a high state, as shown in Fig. 4(a). In this work, the voltage levels of V$_{\mathrm{DD}}$ and V$_{\mathrm{SS}}$ are used for the two reference voltages, V$_{\mathrm{REFT}}$ and V$_{\mathrm{REFB}}$, respectively. In addition, since the signal SAMPD_CAL is high, the CDAC generates a V$_{\mathrm{CM}}$ having a center voltage level between the two reference voltages by connecting V$_{\mathrm{DACP}}$ and V$_{\mathrm{DACM}}$ nodes. Fig. 5(a) shows the equivalent circuit of the CDAC in the section A.

Fig. 4. Operation of CDAC for input offset calibration (a) section A, (b) section B, (c) section C

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Fig. 4(b) shows the operation of the CDAC in the section B for the proposed input offset calibration. The signal SAMP_CAL transitions low by the signal VCM_CAL generated in the SAR logic for the input offset calibration in the section B. At the same time, all control signals from S0 to S10, which are switch control signals for supplying V$_{\mathrm{CM}}$ for the operation of the V$_{\mathrm{CM}}$-based switching CDAC, are transitioned high. This section lasts while the signal SAMPD_CAL, which transitions low one cycle later than the signal SAMPLE, remains high. In this section, the bottom nodes of the CDAC are connected to the V$_{\mathrm{CM}}$ switches, and the top nodes of the CDAC, V$_{\mathrm{DACP}}$ and V$_{\mathrm{DACM}}$ nodes, are kept in a short circuit, as shown in Fig. 5(b). Through this operation, the CDAC outputs the voltage of V$_{\mathrm{CM}}$ while discharging the charge of all capacitors of the CDAC. As a result, the input voltage range of the comparator to

Fig. 5. Equivalent circuits of CDAC according to operation section for input offset calibration (a) sample section of V$_{\mathrm{DD}}$ and V$_{\mathrm{SS}}$, (b) discharge section of CDAC, (c) first comparison section of input offset voltage

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determine the input offset voltage is secured to the center voltage level of the two references without using an additional VCM generator for the CDAC.

After the signal SAMPD_CAL goes low and the signal CLKC_CAL goes high, the last step of the input offset calibration, the section C, begins, as shown in Fig. 3(b). The signal CLKC_CAL is a control signal that activates the signal CLKC which is a synchronous clock for the comparator. Fig. 4(c) shows the connection of the CDAC in this section. The operation of 32 consecutive comparisons is performed on the voltage sampled by the V$_{\mathrm{CM}}$, and the input offset voltage of the SAR ADC is sensed and saved at 16${\cdot}$C$_{\mathrm{U}}$, 8${\cdot}$C$_{\mathrm{U}}$, 4${\cdot}$C$_{\mathrm{U}}$, 2${\cdot}$C$_{\mathrm{U}}$, and 1${\cdot}$C$_{\mathrm{U}}$ of the CDAC. As a result, a 5-bit control signal for controlling the five capacitors for the input offset calibration is generated through the operation of 32 consecutive comparisons. In order to exclude the influence of input referred noise in the offset calibration process, the resolution of the proposed offset calibration is determined by 1 least significant bit (LSB) of the SAR ADC with 10-bit resolution. Fig. 5(c) shows the equivalent circuit of the CDAC when the comparator performs the first comparison for the input offset voltage in the section C.

Table 1 shows the connection status of the five capacitors controlled by the 5-bit control signal for the input offset calibration. For the input offset calibration, the capacitors for the input offset calibration of the positive and negative CDACs are switched to the top and bottom references (V$_{\mathrm{DD}}$ and V$_{\mathrm{SS}}$) as opposed to each other. When the first result of 32 comparisons for the input offset calibration is high, the two 1${\cdot}$C$_{\mathrm{U}}$s of the positive and negative CDACs are switched from V$_{\mathrm{CM}}$ to V$_{\mathrm{SS}}$ and V$_{\mathrm{CM}}$ to V$_{\mathrm{DD}}$, respectively. Then, the comparator

table. 1. Control of capacitors of CDAC for input offset calibration

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judges the voltage difference between the updated V$_{\mathrm{DACP}}$ and V$_{\mathrm{DACM}}$ nodes and outputs a second result. This result is also reflected in the switching of the capacitors in the positive and negative CDACs for the input offset calibration. When the comparator has an input offset voltage, consecutive reflections of the comparison results of the comparator to the CDAC are performed so that the sum of the voltage difference between V$_{\mathrm{DACM}}$ and V$_{\mathrm{DACP}}$ and the input offset voltage of the comparator becomes zero. After the comparison of the comparator is performed 32 times in total and the results are reflected in the switching of the capacitors in the CDAC for the input offset calibration, the proposed input offset calibration is ended. Meanwhile, other capacitors of the CDAC, except for the capacitors for the input offset calibration, maintain the connection to the V$_{\mathrm{CM}}$ regardless of the 32 comparisons while performing the input offset calibration. After performing the input offset calibration, the difference voltage between the V$_{\mathrm{DACM}}$ and V$_{\mathrm{DACP}}$ nodes is determined as the equivalent input offset voltage of the SAR ADC.

Fig. 6 shows the simulation results of the proposed input offset calibration for the asynchronous SAR ADC operating in the half rail-to-rail mode. In order to verify the proposed input offset calibration, the simulation was performed by applying the input offset voltage of 20 mV to the comparator. In addition, the differential analog input signals V$_{\mathrm{IP}}$ and V$_{\mathrm{IM}}$ of the SAR ADC with the half rail-to-rail input voltage range are supplied with 3/4${\cdot}$(V$_{\mathrm{DD}}$${-}$V$_{\mathrm{SS}}$) and 1/4${\cdot}$(V$_{\mathrm{DD}}$${-}$V$_{\mathrm{SS}}$), respectively. If there

Fig. 6. Simulation results of input offset calibration (a) offset calibration code, (b) output voltages of CDAC, (c) output code of SAR ADC

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is no input offset noise, the binary code of 10b'1111111111 is expected as a result of the SAR ADC. However, before performing the input offset calibration, the SAR ADC outputs the binary code of 10b’1111110101 due to the input offset voltage of the comparator, as shown in Fig. 6(c). By performing the proposed input offset calibration, the offset calibration code, CALP[4:0], which controls the five capacitors (16${\cdot}$C$_{\mathrm{U}}$, 8${\cdot}$C$_{\mathrm{U}}$, 4${\cdot}$C$_{\mathrm{U}}$, 2${\cdot}$C$_{\mathrm{U}}$, and 1${\cdot}$C$_{\mathrm{U}}$) for the input offset calibration of the positive CDAC, is updated from 5’b00000 to 5b’01011, as shown in Fig. 6(a). Fig. 6(b) shows the difference voltage generated between the two nodes of V$_{\mathrm{DACP}}$ and V$_{\mathrm{DACM}}$ after performing the proposed input offset calibration. This value is equal to the input offset voltage of the comparator preset to 20mV. The effect of the input offset voltage is removed through the proposed input offset calibration, so the SAR ADC outputs the binary code of 10b’1111111111, which is the ideal value during normal operation, as shown in Fig. 6(c).

Fig. 7. Fabricated SAR ADC (a) chip photograph, (b) layout including calibration logic for input offset calibration

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III. CHIP IMPLEMENTATION AND MEASUREMENT RESULTS

The proposed 10-bit 10-MS/s asynchronous SAR ADC with input offset calibration was implemented by using a 180-nm CMOS process with a supply voltage of 1.8 V. It has the half rail-to-rail input voltage range without additional reference voltages by adding the attenuation capacitors in the CDAC. The attenuation capacitors added in the CDAC for the half rail-to-rail mode are used to implement the proposed input offset calibration. The total active area and power consumption of the proposed asynchronous SAR ADC are 530 μm × 390 μm and 2.29 mW, as shown in Fig. 7. The calibration logic and the finite state machine (FSM) added for the proposed input offset calibration occupy an area of 0.032 mm$^{2}$.

Fig. 8 shows the measured static performances of the implemented SAR ADC. The differential nonlinearity (DNL) and integral nonlinearity (INL) are +0.60/${-}$0.94 LSBs and +0.89/${-}$0.93 LSBs, respectively, and both values are within +/${-}$1.0 LSBs. The jumping points in the measured INL were also generated due to the mismatch between the capacitance of C$_{8}$ for the MSB and the summed capacitance of the remaining capacitors in the CDAC. Fig. 9 shows the dynamic performances through the fast Fourier transform of the results of the asynchronous SAR ADC with the half rail-to-rail input range of about 900 mV. The measured effective number of bits (ENOBs) are 9.33 bits and 9.29 bits for the differential analog input signals with low frequency of 91~kHz and Nyquist frequency of 4.97 MHz, respectively.

Fig. 10 shows the distribution of the output codes of the asynchronous SAR ADC with the half rail-to-rail input range according to the proposed input offset

Fig. 8. Measured static performances of SAR ADC (a) DNL, (b) INL

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Fig. 9. Measured dynamic performances of SAR ADC (a) f$_{\mathrm{IN}}$ = 91 kHz, (b) f$_{\mathrm{IN}}$ = 4.97 MHz

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calibration. The proposed input offset calibration was performed through the operation of the asynchronous SAR ADC with a sampling frequency of 10 MS/s for a differential analog input signal having an input frequency of 91 kHz. In addition, differential analog input signals for outputting codes of decimal 20 and 1005 were supplied to the asynchronous SAR ADC. Before the input offset calibration, the 20 fabricated SAR ADC chips output codes with the distributions of ten codes and

table. 2. Performance comparison of 10-bit SAR ADCs

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Fig. 10. Distribution of measured output codes of SAR ADC (a) decimal 20 code, (b) decimal 1005 code

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eight codes, respectively, for decimal 20 and 1005 codes. The distributions of these output codes were reduced to the range of three codes by the proposed input offset calibration. Table 2 shows the performance comparison of 10-bit SAR ADCs.

IV. CONCLUSIONS

The input offset calibration performed by controlling the attenuation capacitors of the CDAC, was proposed to reduce the input offset mismatch between multiple SAR ADCs. To verify the proposed input offset calibration, the 10-bit 10-MS/s SAR ADC with asynchronous architecture was implemented by using a 180-nm CMOS process with a supply voltage of 1.8 V. The power consumption and active area of the implemented SAR ADC were 2.29 mW and 0.207 mm$^{2}$. The proposed input offset calibration reduced the distributions of the output codes of decimal 20 and 1005 from ten codes and eight codes to three codes, respectively. The measured DNL and INL are +0.60/${-}$0.94 LSBs and +0.89/${-}$0.93 LSBs, respectively. The ENOB is measured to 9.29 bits for the analog input signal with Nyquist frequency.

ACKNOWLEDGMENTS

This work was supported by the Priority Research Centers Program (2018R1A6A1A03024003) and Basic Science Research Program (2020R1I1A3071634) through the NRF funded by the Ministry of Education, the HRD Program (N0001883) for Intelligent Semiconductor Industry through the MOTIE, and the Grand Information Technology Research Center Program (IITP-2020-2020-0-01612) through the IITP funded by the MSIT, Korea. The EDA tool was supported by the IC Design Education Center, Korea.

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Author

Jisu Son
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Jisu Son received the B.S. and M.S. degrees from the Department of Electronic Engineering, Kumoh National Institute of Technology, Gumi, South Korea, in 2015 and 2017, respectively.

She joined Silicon Works Inc.

in Daejeon in 2017 and is now a Senior Research Engineer.

Her current research interests include the analog mixed-mode circuit design such as an analog-to-digital converter and the display driver integrated circuit design.

Young-Chan Jang
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Young-Chan Jang received the B.S. degree in the department of elec¬tronic engineering from Kyungpook National University, Daegu, Korea, in 1999 and the M.S. and Ph.D. degrees in electronic engineering from Pohang University of Science and Technology (POSTECH), Pohang, Korea, in 2001 and 2005, respectively.

From 2005 to 2009, he was a Senior Engineer in the Memory Division, Samsung Electronics, Hwasung, Korea, working on high-speed interface circuit design and next-generation DRAM.

In 2009, he joined the School of Electronic Engineering, Kumoh National Institute of Technology, Gumi, Korea, as a Faculty Member, where he is currently Professor.

His current research area is high-performance mixed-mode circuit design for VLSI systems such as high-performance signaling, clock generation, and analog-to-digital conversion.