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2022-06

P.133

Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current

(Ho-Jun Kim) ; (Won-Cheol Lee) ; (Hong-June Park)
https://doi.org/10.5573/JSTS.2022.22.3.133
P.139

Investigation of Mechanical Stability during Electrothermal Annealing in a 3D NAND Flash Memory String

(Yu-Jin Kim) ; (Jun-Young Park)
https://doi.org/10.5573/JSTS.2022.22.3.139
P.146

A Study on SRAM Designs to Exploit the TEI-aware Ultra-low Power Techniques

(Seung-Yeong Lee) ; (Jae-Hyoung Lee) ; (Woojoo Lee) ; (Younghyun Kim)
https://doi.org/10.5573/JSTS.2022.22.3.146
P.177

A Quadrature Error Corrector for Aperiodic, Quarterrate Data Strobe Signals in HBM3 Interfaces

(Seo-Yeong Jo) ; (Jinhyung Lee) ; (Myeong-Jae Park) ; (Deog-Kyoon Jeong) ; (Jaeha Kim)
https://doi.org/10.5573/JSTS.2022.22.3.177
P.188

Nanoelectromechanical (NEM) Devices for Logic and Memory Applications

(Hyug Su Kwon) ; (Woo Young Choi)
https://doi.org/10.5573/JSTS.2022.22.3.188
P.198

A Compact 6-bit Phase Shifter in 65 nm RF CMOS Technology for ISM Band

(Tan-Binh Ngo) ; (Quang-Huy Do) ; (Sang-Woong Yoon)
https://doi.org/10.5573/JSTS.2022.22.3.198