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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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References

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Aochi H., 2009, BiCS Flash as a Future 3D Non-Volatile Memory Technology for Ultra High Density Storage Devices, IEEE International Memory Workshop (IMW), pp. 1-2DOI
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Hsu T.-H., Lue H.-T., Du P.-Y., Chen W.-C., Yeh T.-H., Lo R., Chang H.-S., Wang K.-C., Lu C.-Y., May 2019, Study of self-healing 3D NAND flash with micro heater to improve the performances and lifetime for fast NAND in NVDIMM applications, IEEE 11th International Memory Workshop (IMW), pp. 1-4DOI
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Lee K.-S., Park J.-Y., Jun. 2021, Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs, Electronics, Vol. 10, No. 12, pp. 1395DOI
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Jung W.-J., Park J.-Y., Oct. 2021, Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory, Micromachines, Vol. 12, No. 11, pp. 1297DOI
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Lue H.-T., Du P.-Y., Chen C.-P., Chen W.-C., Hsieh C.-C., Hsiao Y.-H., Shih Y.-H., Lu C.-Y., Dec. 2012, Radically extending the cycling endurance of flash memory (to > 100 M cycles) by using built-in thermal annealing to self-heal the stress-induced damage, in Proc. IEEE Int. Electron Devices Meeting (IEDM), pp. 9.1.1-9.1.4DOI
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Park J.-Y., Moon D.- I., Seol M.-L., Jeon C.-H., Jeon G.-J., Han J.-W., Kim C.-K., Park S.-J., Lee H.-C., Choi Y.-K., Jan. 2016, Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration, Sci. Rep. Art. no. 19314DOI
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Kim M.-K., Choi Y.-K., Park J.-Y., Jan. 2022, Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs, Micromachines, Vol. 13, No. 1DOI
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Park J.-Y., Moon D.-I., Seol M.-L., Kim C.-K., Jeon C.-H., H.-Bae , Bang T., Choi Y.-K., Mar. 2016, Self-curable gate-all-around MOSFETs using electrical annealing to repair degradation induced from hot-carrier injection, IEEE Trans. Electron Devices, Vol. 63, No. 3, pp. 910-915DOI
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Park J.-Y., Yun D.-H., Kim S.-Y., Choi Y.-K., Feb. 2019, Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory using a Plugged Pillar-Shaped Heat Sink, IEEE Electron Device Lett., Vol. 40, No. 2, pp. 212-215DOI
11 
Jung D.-H., Lee K.-S., Park J.-Y., Oct. 2021, Demonstration of Multi-layered Macaroni Filler for Back-Biasing-Assisted Erasing Configuration in 3D V-NAND, J. Semicond. Technol. Sci., Vol. 21, No. 5DOI