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Title Nanoelectromechanical (NEM) Devices for Logic and Memory Applications
Authors (Hyug Su Kwon) ; (Woo Young Choi)
DOI https://doi.org/10.5573/JSTS.2022.22.3.188
Page pp.188-197
ISSN 1598-1657
Keywords CMOS; nanoelectromechanical (NEM) memory switch; monolithic three-dimensional (M3D) integration; field programmable gate array (FPGA)
Abstract Recent research on NEM devices for logic and memory applications has been reviewed from the perspective of monolithic 3D (M3D) heterogeneous integration. In addition, the backgrounds of M3D CMOS-NEM reconfigurable logic (RL) circuits are described in detail. Moreover, 65-nm process based M3D CMOS-NEM RL circuits were proposed. It is predicted that proposed M3D CMOS-NEM RL circuits will exhibit 4.6x higher chip density, 2.3x higher operation frequency and 9.3x lower power consumption than CMOS-only ones (tri-state buffer case) for tile-to-tile operation.