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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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Title A 232.2nW Segmented Curvature Compensation Sub-BGR with Bandgap Core Reusing
Authors (Seung-Hun Park) ; (Jun-Ho Boo) ; (Jae-Geun Lim) ; (Hyoung-Jung Kim) ; (Jae-Hyuk Lee) ; (Seong-Bo Park) ; (Seong-U Choi) ; (Gil-Cho Ahn)
DOI https://doi.org/10.5573/JSTS.2025.25.3.267
Page pp.267-273
ISSN 1598-1657
Keywords Sub-BGR; segmented curvature compensation; self-cascode MOSFET
Abstract This paper presents a segmented curvature compensation sub-BGR that maintains a low TC with low power consumption over a wide temperature range. In this work, segmented curvature compensation is applied to achieve lower TC by adding correction voltages to uncompensated reference voltage. Furthermore, the bandgap core is reused for the generation of the voltages required for segmented curvature compensation, contributing high power and area efficiency. The proposed sub-BGR is implemented in a 180 nm CMOS process and occupies an active area of 0.21 mm2 . Measurement results show a reference voltage of 1.191 V and power consumption of 232.2 nW under 1.8 V supply. It achieves an average TC of 17.69 ppm/?C across a temperature range from ?40?C to 120?C.