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REFERENCES

1 
Kawamura Y., Tani M., Hattori N., Miyatake N., Horita M., Ishikawa Y., Uraoka Y., Feb 2012, Low-temperature-processed zinc oxide thin-film transistors fabricated by plasma-assisted atomic layer deposition, Japanese Journal of Applied Physics, Vol. 51, No. 2S, pp. 02bf04DOI
2 
Yamauchi H., Iizuka M., Kudo K., Apr 2007, Fabrication of vertical organic light-emitting transistor using ZnO thin film, Japanese Journal of Applied Physics, Vol. 46, No. 4S, pp. 2678DOI
3 
Nishii J., Hossain F. M., Takagi S., Aita T., Saikusa K., Ohmaki Y., Ohkubo I., Kishimoto S., Ohtomo A., Fukumura T., Apr 2003, High mobility thin film transistors with transparent ZnO channels, Japanese Journal of Applied Physics, Vol. 42, No. 4A, pp. L347DOI
4 
Fortunato E., Barquinha P., Martins R., May 2012, Oxide semiconductor thin‐film transistors: a review of recent advances, Advanced materials, Vol. 24, No. 22, pp. 2945-2986DOI
5 
Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., Hosono H., Nov 2004, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors, nature, Vol. 432, No. 7016, pp. 488-492DOI
6 
Powell M. J., Glasse C., Green P. W., French I. D., Stemp I. J., Mar 2000, n amorphous silicon thin-film transistor with fully self-aligned top gate structure, IEEE Electron Device Letters, Vol. 21, No. 3, pp. 104-106DOI
7 
Nomura K., Takagi A., Kamiya T., Ohta H., Hirano M., Hosono H., May 2006, Amorphous oxide semiconductors for high-performance flexible thin-film transistors, Japanese journal of applied physics, Vol. 45, No. 5S, pp. 4303DOI
8 
Takenaka K., Cho K., Ohchi Y., Otani H., Uchida G., Setsuhara Y., May 2015, Low-temperature formation of amorphous InGaZnOx films with inductively coupled plasma-enhanced reactive sputter deposition, Japanese journal of applied physics, Vol. 54, No. 6S2, pp. 06GC02-DOI
9 
Kamiya T., Nomura K., Hosono H., Aug 2010, Present status of amorphous In–Ga–Zn–O thin-film transistors, Science and Technology of Advanced Materials, Vol. 11, No. 4, pp. 044305DOI
10 
Lu H., Ren C., Xiao X., Xiao Y., Wang C., Zhang S., 2016, Comparison of N2 and ar plasma treatment for source/drain formation in self-aligned top-gate amorphous InGaZnO thin film transistor, 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), IEEEDOI
11 
Cho S. H., Choi M. J., Chung K. B., Park J. S., May 2015, Low temperature processed InGaZnO oxide thin film transistor using ultra-violet irradiation, Electronic Materials Letters, Vol. 11, No. 3, pp. 360DOI
12 
Koo J. H., Kang T. S., Hong J. P., May 2012, Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents, Journal of the Korean Physical Society, Vol. 60, No. 9, pp. 1386-1389DOI
13 
Kim W., Bang J. H., Uhm H. S., Lee S. H., Park J. S., Dec 2010, Effects of post plasma treatment on material properties and device characteristics in indium zinc oxide thin film transistors, Thin Solid Films, Vol. 519, No. 5, pp. 1573-1577DOI
14 
Chasin \A., Steudel S., Myny K., Nag M., Ke T.H., Schols S., Genoe J., Gielen G., Heremans P., Sep 2012, High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts, Applied Physics Letters, Vol. 101, No. 11, pp. 113505DOI
15 
Ryu B., Noh H. K., Choi E. A., Chang K. J., Jul 2010, O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors, Applied physics letters, Vol. 97, No. 2, pp. 022108DOI
16 
Lee Y. S., Yu E. K. H., Shim D. H., Kong H. S., Bie L., Kanicki. J., Nov 2014, Oxygen flow effects on electrical properties, stability, and density of states of amorphous In–Ga–Zn–O thin-film transistors, Japanese Journal of Applied Physics, Vol. 53, No. 12, pp. 121101DOI
17 
An J.U., Yun H. J., Kim Y. S., Jeong K. S., Kim Y. M., Yang S. D., Lee H. D., Lee G. W., Jul 2014, Improvement in n-ZnO/p-Si diode properties using ZnO/AZO homogeneous metal contact, Japanese Journal of Applied Physics, Vol. 53, No. 8S3, pp. 08NJ03DOI
18 
Wu C. F., Chen Y. F., Lu H., Huang X. M., Ren F. F., Chen D. J., Zhang R., Zheng Y. D., Chin , Mar 2016, Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy, Chinese Physics B, Vol. 25, No. 5, pp. 057306DOI
19 
Lee S. Y., Jun 2015, Investigation on Contact Resistance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Various Electrodes by Transmission Line Method, Transactions on Electrical and Electronic Materials, Vol. 16, No. 3, pp. 139-141DOI
20 
Barquinha P., Vilà A. M., Gonçalves G., Pereira L., Martins R., Morante J. R., Fortunato E., Apr 2008, Gallium–indium–zinc-oxide-based thin-film transistors: Influence of the source/drain material, IEEE Transactions on Electron Devices, Vol. 55, No. 4, pp. 954-960DOI
21 
Wang W., Li L., Lu C., Liu Y., Lv H., Xu G. W., Ji Z., Liu M., Aug 2015, Analysis of the contact resistance in amorphous InGaZnO thin film transistors, Applied Physics Letters, Vol. 107, No. 6, pp. 063504DOI
22 
Iwamatsu S., Takechi K., Yahagi T., Watanabe Y., Tanabe H., Kobayashi S., Sep 2013, Characterization of top-gate effects in amorphous InGaZnO4 thin-film transistors using a dual-gate structure, Japanese Journal of Applied Physics, Vol. 51, No. 10R, pp. 104201DOI
23 
Trinh T. T., Nguyen V. D., Ryu K., Jang K. S., Lee W. b., Baek S. S., Raja J., Yi J. S., May 2011, Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer, Semiconductor science and technology, Vol. 26, No. 8, pp. 085012DOI
24 
Chasin A., Steudel S., Myny K., Nag M., Ke T. H., Schols S., Genoe J., Gielen G., Heremans P., Aug 2012, High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts, Applied Physics Letters, Vol. 101, No. 11, pp. 113505DOI