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2019-04

P.203

Selection Line Optimization of Nanoelectromechanical (NEM) Memory Switches for Stress Relief

조현찬(Hyun Chan Jo) ; 강민희(Min Hee Kang) ; 최우영(Woo Young Choi)
https://doi.org/10.5573/JSTS.2019.19.2.203
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P.208

Influence of Etch Profiles on the Leakage Current and Capacitance of 3-D DRAM Storage Capacitors

신성은(Seongun Shin) ; 윤규한(Gyuhan Yoon) ; 최우영(Woo Young Choi)
https://doi.org/10.5573/JSTS.2019.19.2.208
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P.214

Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AlGaN/GaN Recessed MISHFETs

금동민(Dongmin Keum) ; 김형택(Hyungtak Kim)
https://doi.org/10.5573/JSTS.2019.19.2.214
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P.220

A 12-Gb/s Continuous-time Linear Equalizer with Offset Canceller

임백진(Baekjin Lim) ; 유창식(Changsik Yoo)
https://doi.org/10.5573/JSTS.2019.19.2.220
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P.226

A CMOS Fourth-order Delta-sigma Modulator with a Single Reconfigurable Fully Differential Amplifier

성재현(Jae-hyun Sung) ; 윤광섭(Kwang Sub Yoon)
https://doi.org/10.5573/JSTS.2019.19.2.226
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P.233

Fabrication of Tandem-type Vertically Integrated Nanogenerator by In-situ Deposition of AlN/ZnO Films

임문혁(Munhyuk Yim) ; 전부일(Buil Jeon) ; 윤기완(Giwan Yoon)
https://doi.org/10.5573/JSTS.2019.19.2.233
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