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Title Selection Line Optimization of Nanoelectromechanical (NEM) Memory Switches for Stress Relief
Authors 조현찬(Hyun Chan Jo) ; 강민희(Min Hee Kang) ; 최우영(Woo Young Choi)
DOI https://doi.org/10.5573/JSTS.2019.19.2.203
Page pp.203-207
ISSN 1598-1657
Keywords Terms?Nanoelectromechanical (NEM) ; NEM memory switch ; reliability ; stress
Abstract Selection lines (SLs) of nanoelectromechanical (NEM) memory switches are optimized for stress relief by using finite-element-method (FEM) simulation. According to the simulation results, as the length of SL (LSL) decreases, pull-in voltage (VPI) increases while the maximum stress (σmax) concentrated at the anchor of a movable beam decreases. Thus, it is important to determine optimal LSL to achieve better reliability while maintaining VPI.