Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. JSTS 2019-04(Vol.19 No.02)
XML PDF INFO REF
Title Influence of Etch Profiles on the Leakage Current and Capacitance of 3-D DRAM Storage Capacitors
Authors 신성은(Seongun Shin) ; 윤규한(Gyuhan Yoon) ; 최우영(Woo Young Choi)
DOI https://doi.org/10.5573/JSTS.2019.19.2.208
Page pp.208-213
ISSN 1598-1657
Keywords DRAM ; storage capacitor ; etch profile ; leakage current ; capacitance
Abstract The influence of etch profiles on leakage current and capacitance of three-dimensional (3-D) dynamic random access memory (DRAM) storage capacitors is investigated by using full 3-D technology computer-aided design (TCAD) simulation. According to the simulation results calibrated by experimental data, as the ratio of bottom critical dimension (CDBOT) to top critical dimension (CDTOP) of a DRAM storage capacitor decreases, storage capacitance (Cs) decreases while leakage current (Ileak) increases. Thus, it is important to achieve steep etch profiles during the fabrication of DRAM storage capacitors for higher DRAM capacity and longer refresh time.