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2026-04

P.106

Effect of Top Electrode Work Function on Switching and Synaptic Characteristics of HfO2/ZnO-based Memristive Device

(Yu-Bin Kim) ; (Sung-Ho Kim) ; (Dong-Min Kim) ; (Chae-Min Yeom) ; (Shivam Kumar Guatam) ; (Yong-Goo Kim) ; (Hyuk-Min Kwon) ; (Hi-Deok Lee)
P.150

Investigation of Ternary Operation 1T DRAM with Double Quantum Well Structure

(Min-Ju Lee) ; (Seong-Ho Kim) ; (Ga-Hyun Shin) ; (Jae-Sung Park) ; (Woo Young Choi) ; (Il Hwan Cho)