Mobile QR Code QR CODE

The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

Journal Search

  1. Home
  2. Archive
  3. 2026-04 (Vol.26 No.02)
  4. 10.5573/JSTS.2026.26.2.114
XML PDF INFO REF

REFERENCES

1 
Ali K. B. , Neve C. R. , Gharsallah A. , Raskin J.-P. , 2014, RF performance of SOI CMOS technology on commercial 200-mm enhanced signal integrity high resistivity SOI substrate, IEEE Transactions on Electron Devices, Vol. 61, No. 3, pp. 722-728DOI
2 
Raskin J.-P. , 2016, SOI technology pushes the limits of CMOS for RF applications, Proc. of the IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 17-20DOI
3 
Yu B. , Ma K. , Meng F. , Yeo K. S. , Shyam P. , Zhang S. , Verma P. R. , 2017, DC-30 GHz DPDT switch matrix design in high resistivity trap-rich SOI, IEEE Transactions on Electron Devices, Vol. 64, No. 9, pp. 3548-3554DOI
4 
Zhang Z. , Lin J. , Yu K. , Zhang S. , Huang L. , Zhang G. , 2015, A novel low-loss high-isolation DP5T SOI CMOS switch in MCM for multi-band applications, Proc. of the 2015 Asia-Pacific Microwave Conference, pp. 1-3DOI
5 
Ahn J. , Lee S. , 2016, A direct method to extract extrinsic capacitances of rf SOI MOSFETs using common source-body and gate-body configurations, Microwave and Optical Technology Letters, Vol. 58, No. 12, pp. 2851-2853DOI
6 
Lee S. , 2008, A direct method to extract RF MOSFET model parameters using common source-gate and source-drain configurations, Microwave and Optical Technology Letters, Vol. 50, No. 4, pp. 915-917DOI
7 
Kuk J. , Lee S. , 2021, Improved RF method to extract extrinsic capacitances in PD-SOI MOSFETs, Journal of the Institute of Electronics and Information Engineers, Vol. 58, No. 4, pp. 3-8DOI
8 
Cha J. , Cha J. , Lee S. , 2008, Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements, IEEE Transactions on Electron Devices, Vol. 55, No. 8, pp. 2195-2201DOI
9 
Kim J.-Y. , Choi M.-K. , Lee S. , 2012, A thru-short-open de-embedding method for accurate on-wafer RF measurements of nano-scale MOSFETs, Journal of Semiconductor Technology and Science, Vol. 12, No. 1, pp. 53-58DOI
10 
Lee S. , 2005, An accurate RF extraction method for resistances and inductances of sub-0.1µm CMOS transistors, Electronics Letters, Vol. 41, No. 24, pp. 1325-1327DOI
11 
Kuk J. , Lee S. , 2021, Gate voltage-dependence of junction capacitance in MOSFETs, IEEE Transactions on Electron Devices, Vol. 68, No. 10, pp. 5315-5318DOI
12 
Ricco B. , Versari R. , Esseni D. , 1996, Characterization of polysilicon-gate depletion in MOS structures, IEEE Electron Device Letters, Vol. 17, No. 3, pp. 103-105DOI