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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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Title A Novel Parameter Extraction Technique for Off-state Equivalent Circuit Model of Body-Contact PD-SOI MOSFETs
Authors (Seunghun Yi) ; (Seonghearn Lee)
DOI https://doi.org/10.5573/JSTS.2026.26.2.114
Page pp.114-120
ISSN 1598-1657
Keywords SOI MOSFET; off-state; equivalent circuit; RF model; parameter extraction; modeling; extraction technique
Abstract To directly extract the model parameters of the physical off-state small-signal equivalent circuit of bodycontact PD-SOI MOSFETs, novel extraction equations are derived from Y-parameter equations approximated in both low and high-frequency regions. Unlike conventional direct extraction methods that require additional test patterns or measurements under varying bias conditions, the proposed technique enables direct extraction of all off-state equivalent circuit parameters using only a single S-parameter measurement, making it much simpler. The off-state model built with this novel extraction method shows excellent agreement with measured S-parameters in the wide bias range and the frequency range from 100 MHz to 40 GHz.