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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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References

1 
S. S. Chen and J. B. Kuo, “An analytical CAD kink effect model of partially-depleted SOI NMOS devices operating in strong inversion,” Solid-State Electron., vol. 41, no. 3, pp. 447-458, Mar. 1997.DOI
2 
S. C. Lin and J. B. Kuo, “Temperature-dependent kink effect model for partially-depleted SOI NMOS devices,” IEEE Trans. Electron Devices, vol. 46, no. 1, pp. 254-258, Jan. 1999.DOI
3 
M. Y. Hammad and D. K. Schroder, “Analytical Modeling of the Partially-Depleted SOI MOSFET,” IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 252-258, Feb. 2001.DOI
4 
M. Kaifi and M.J. Siddiqui, “Kink model for SOI MOSFET,” in Proc. Int. Conf. on Multimedia, Signal Processing and Communication Technologies, Dec. 2011, pp. 17-19.DOI
5 
P. Su, S. K. H. Fung, H. Wan, A. Niknejad, M. Chan, and C. Hu, “An impact ionization model for SOI circuit simulation,” in Proc. IEEE Int. SOI Conf., Oct. 2002, pp. 201-202.URL
6 
K. Kim and S. Lee, “Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs,” IEEE Journal of the Electron Devices Society, vol. 11, pp. 354-358, 2023.DOI
7 
X. Cai and C. Hai, “Study of body contact of partial depleted SOI NMOS devices,” in Proc. 8th Int. Conf. Solid-State and IC Tech., Oct. 2006, pp. 23-26.DOI
8 
Y. Omura and K. Izumi, "Simplified Analysis of Body-Contact Effect for MOSFET/SOI," IEEE Trans. Electron Devices, vol. 35, no. 8, pp. 1391-1393, Aug. 1988.DOI
9 
J. Sleight and K. Mistry, "A Compact Schottky Body Contact Technology for SOI Transistors," International Electron Devices Meeting (IEDM) Tech. Digest, 1997, pp. 419-422.DOI
10 
H. Lee, H. Nah, J.-H. Lee, D.-G. Kang, Y. J. Park, and H. S. Min, “Analysis of body bias effect with PD-SOI for analog and RF applications,” Solid State Electron., vol. 46, no. 8, pp. 1169-1176, Aug. 2002.DOI
11 
O. Rozeau, J. Jomaah, J. Boussey, C. Raynaud, L. Pelloie, and F. Balestra, “Impact of Floating Body and BS-Tied Architectures on SOI MOSFET's Radio-Frequency Performances,” in Proc. IEEE Int. SO1 Conf., Oct. 2000, pp. 124-125.DOI
12 
K. Lee and S. Lee, “Empirical Kink Effect Modeling for Body Contacted High Resistivity PD-SOI nMOSFETs,” J. Inst. Electron. Inf. Eng., vol. 55, no. 12, pp. 47-52, Dec. 2018.URL
13 
K. Lee and S, Lee, “Theory and Analysis of Kink Effect in Body Contacted PD-SOI nMOSFETs,” J. Inst. Electron. Inf. Eng., vol. 56, no. 11, pp. 15-21, Nov. 2019.DOI
14 
K. Lee and S. Lee, “Analysis of RF Inductive Effect in S-Parameters of Body Contact PD-SOI MOSFETs,” IEEE Trans., Electron Devices, vol. 67, no. 10, pp. 4054-4059, Oct. 2020.DOI
15 
K. Lee and S. Lee, “Drain Voltage Dependence Analysis of RF Inductive Effect in Body Contacted High Resistivity PD-SOI N-MOSFETs,” J. Inst. of Electron. Inf. Eng., vol. 58, no. 2, pp. 117-123, 2021.DOI
16 
K. Kim and S. Lee, “An Improved Small-Signal Equivalent Circuit Parameter Extraction Method for Body Contact PD-SOI MOSFET with RF Inductive Effect,” J. Inst. of Electron. Inf. Eng., vol. 60, no. 2, pp. 35-41, Feb. 2023.DOI
17 
J. Ahn and S. Lee, “A direct method to extract extrinsic capacitances of RF SOI MOSFETs using common source-body and gate-body configura-tions," Microw. Opt. Technol. Lett., vol. 58, no. 12, pp. 2851-2853, 2016.DOI
18 
P. Su, K. I. Goto, T. Sugii and C. Hu, “A Thermal Activation View of Low Voltage Impact Ionization in MOSFETs,” IEEE Electron Device Letters, vol. 23, no. 9, pp. 550-552, Sep. 2002.DOI
19 
S. M. Sze and M. K. Lee, Semiconductor Devices - Physics and Technology, Wiley, 3rd ed., 2012, p. 188.URL
20 
K. Kim and S. Lee, “Analysis of AC Kink Effect in Floating Body PD-SOI MOSFETs,” in Proc. 2023 Asia-Pacific Workshop on Advanced Semicon-ductor Devices (AWAD), July 2023, pp. 193-194.URL