| Title |
Analysis of Drain Voltage Dependent RF Inductive Effect in Floating Body PD-SOI MOSFETs |
| Authors |
(Kyeongjun Kim) ; (Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/JSTS.2024.24.5.448 |
| Keywords |
FB PD-SOI; SOI MOSFET; RF inductive effect; kink effect; S-parameter |
| Abstract |
Based on the analysis of the RF inductive effect due to the negative capacitance observed in the -parameter of floating body PD-SOI n-MOSFETs on the Smith chart, the reason why this effect appears at a much higher than the DC kink voltage , unlike in body contact devices, is revealed for the first time. The origin of the anomalous -dependence on RF inductive effect is identified by analyzing the - dependent kink conductance and the pole frequency , which are extracted using the frequency curves of the output admittance. Using the measured versus data, which is validated by a physical body transconductance equation, it is confirmed that the turning radius of the -parameter is reduced at lower due to a decrease in . It is theoretically proven that the extracted data is reduced as decreases, and if is less than the minimum measurement frequency, the rotation angle of the trajectory becomes significantly smaller. Due to the decrease in and at lower the anomalous RF inductive effect is exhibited in floating body devices. |