Mobile QR Code QR CODE

The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

Journal Search

  1. Home
  2. Archive
  3. 2025-02 (Vol.25 No.01)
  4. 10.5573/JSTS.2025.25.1.21
XML PDF INFO REF

References

1 
K. J. Chen, O. Häberlen, A. Lidow, C. L. Tsai, T. Ueda, Y. Uemoto, and Y. Wu, ``GaN-on-Si power technology: Devices and applications,'' IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 779-795, 2017.DOI
2 
X. Ding, Y. Zhou, and J. Cheng, ``A review of gallium nitride power device and its applications in motor drive,'' CES Transactions on Electrical Machines and Systems, vol. 3, no. 1, pp. 54-64. 2019.DOI
3 
M. Meneghini, C. de Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, et al., ``GaN-based power devices: Physics, reliability, and perspectives,'' Journal of Applied Physics, vol. 130, no. 18, 2021.DOI
4 
B. D> Weaver, T. J. Anderson, A. D. Koehler, J. K. Hite, D. I. Shahin, and K. D. Hobart, ``On the radiation tolerance of AlGaN/GaN HEMTs,'' ECS Journal of Solid-State Science and Technology, vol. 5, no. 7, 2016.DOI
5 
B. D> Weaver, T. J. Anderson, T. J., A. D. Koehler, J. D. Greenlee, J. K. Hite, D. I. Shahin, et al, ``On the radiation tolerance of AlGaN/GaN HEMTs,'' ECS Journal of Solid-State Science and Technology, vol. 5, no. 7. 2016.DOI
6 
S. J. Pearton, F. Ren, E. Patrick, M. E. Law, and A. Y. Polyakov, ``Ionizing radiation damage effects on GaN devices,'' ECS Journal of Solid-state Science and Technology, vol. 5, no. 2. 2015.DOI
7 
B. D. Weaver, T. J. Anderson, A. D. Koehler, J. D. Greenlee, J. K. Hite, D. I. Shahin, et al, ``On the radiation tolerance of AlGaN/GaN HEMTs,'' ECS Journal of Solid-State Science and Technology, vol. 5, no. 7, 2016.DOI
8 
A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H. J. von Bardeleben, J. L. Cantin, and S. Raymond, ``Radiation hardness of gallium nitride,'' IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp 2733-2738, 2002.DOI
9 
S. J. Pearton, F. Ren, E. Patrick, M. E. Law, and A. Y. Polyakov, ``Ionizing radiation damage effects on GaN devices,'' ECS Journal of Solid State Science and Technology, vol. 5, no. 2, 2015.DOI
10 
C. Fares, F. Ren, S. J. Pearton, G. Yang, J. Kim, C. F. Lo, and J. W. Johnson, ``Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors,'' Journal of Vacuum Science & Technology B, vol. 36, no. 5, 2018.DOI
11 
Z. Gao, M. F. Romero, A. Redondo-Cubero, M. A. Pampillon, E. San Andres, and F. Calle, ``Effects of Gd 2 O 3 gate dielectric on proton-irradiated AlGaN/GaN HEMTs,'' IEEE Electron Device Letters, vol. 38, no. 5, pp. 611-614, 2017.DOI
12 
D. Zhang, X. Cheng, L. Shen, L. Zheng, Z. Gu, W. Zhou, et al., ``Influence of poly-AlN passivation on the performance improvement of 3-MeV proton-irradiated AlGaN/GaN MIS-HEMTs,'' IEEE Transactions on Nuclear Science, vol. 66, no. 10, pp. 2215-2219, 2019.DOI
13 
B. Luo, F. Ren, K. K. Allums, B. P. Gila, A. H. Onstine, C. R. Abernathy, et al., ``Proton irradiation of MgO-or Sc2O3 passivated AlGaN/GaN high electron mobility transistors,'' Solid-State Electronics, vol. 47, no. 6, pp. 1015-1020, 2003.DOI
14 
S. J. Chang, K. J. Cho, H. W. Jung, J. J. Kim, Y. J. Jang, S. B. Bae, et al., ``Improvement of proton radiation hardness using ALD-Deposited Al2O3 gate insulator in GaN-bsed MIS-HEMTs,'' ECS Journal of Solid-State Science and Technology, vol. 8, no. 12, 2019.DOI
15 
J. H. Lee, D. S. Kim, J. G. Kim, W. H. Ahn, Y. Bae, and J. H. Lee, ``Effect of gate dielectrics on characteristics of high-energy proton irradiated AlGaN/GaN MISHEMTs,'' Radiation Physics and Chemistry, vol. 184, 109473, 2021.DOI
16 
J. He, M. Feng, Y. Zhong, J. Wang, R. Zhou, H. Gao, et al., ``On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,'' Scientific Reports, vol. 8, no. 1, 7922, 2018.DOI
17 
S. X. Sun, Z. C. Wei, P. H. Xia, W. B. Wang, Z. Y. Duan, Y. X. Li, et al., ``Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs,'' Chinese Physics B, vol. 27, no. 2, 2018.DOI
18 
Y. J. Yoon, J. S. Lee, J. K. Suk, I. M. Kang, J. H. Lee, E. J. Lee, and D. S. Kim, ``Effects of proton irradiation on the current characteristics of sin-passivated AlGaN/GaN MIS-HEMTs using a TMAH-based surface pre-treatment,'' Micromachines, vol. 12, no. 8, pp. 864, 2021.DOI
19 
A. Hierro, S. A. Ringel, M. Hansen, J. S. Speck, U. K. Mishra, and S. P. Denbaars, ``Hydrogen passivation of deep levels in n-GaN,'' Applied Physics Letters, vol. 77, no. 10, pp. 1499-1501, 2000.DOI
20 
J. F. Ziegler, M. D. Ziegler, and J. P. Biersack, ``SRIM-The stopping and range of ions in matter nuclear instruments and methods in physics research,'' Section B: Beam Interactions with Materials and Atoms, vol. 268 no. 11-12, pp. 1818-1823, 2010.DOI
21 
Y. Yoon, J. Lee, Y. Kim, D. Kim, O. Seok, and J. Lee, ``Simulation modeling for evaluating high-energy proton irradiation effects of gallium nitride-based electronics,'' Journal of Radiation Industry, vol. 15, no. 4, pp. 275-281, 2021.DOI