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Wang X., Dec., 2011, “Nanoantibiotics”: a new paradigm for treating infectious diseases using nanomaterials in the antibiotics resistant era, Journal of Controlled Release, Vol. 156, No. 2, pp. 128-145DOI
Hirama K., Apr 2012, RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond, IEEE Electron Device Letters, Vol. 33, No. 4, pp. 513-515DOI
Garcia. S., Aug 2013, Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length, Journal of Applied Physics, Vol. 114, No. 7, pp. 074503DOI
Singisetti. U., Jan 2012, Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510 mS/mm gm, and 0.66-Ω·mm Ron, IEEE Electron Device Letters, Vol. 33, No. 1, pp. 26-28DOI
Lee. J-H., Aug 2013, Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate, IEEE electron device letters, Vol. 34, No. 8, pp. 975-977DOI
Kumar. V., Aug 2002, AlGaN/GaN HEMTs on SiC with fT of over 120 GHz, IEEE Electron Device Letters, Vol. 23, No. 8, pp. 455-457DOI
Kim. K-W., Oct 2011, Effects of TMAH Treatment on Device Performance of Normally off Al2O3/GaN MOSFET, IEEE Electron Device Letters, Vol. 32, No. 10, pp. 1376-1378DOI
Kim. D-S., Jan 2015, Growth and characterization of semi-insulating carbon doped/undoped GaN multiple-layer buffer, Semiconductor Science and Technology, Vol. 30, No. 3, pp. 035010Google Search
Jo. Y-W., Oct 2015, AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch, IEEE Electron Device Letters, Vol. 36, No. 10, pp. 1008-1010DOI
Lee. D. S., Aug 2013, Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT, IEEE Electron Device Letters, Vol. 34, No. 8, pp. 969-971DOI
palacios. T., Oct 2005, Influence of the dynamic access resistance in the g/sub m/ and f/sub T/linearity of AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, Vol. 52, No. 10, pp. 2117-2123DOI
DiSanto. D. W., Dec 2006, At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity, IEEE Transactions on Electron Devices, Vol. 53, No. 12, pp. 2914-2919DOI
Park. J., Jan 2019, Toroidal-Shaped Coils for a Wireless Power Transfer System for an Unmanned Aerial Vehicle, Journal of Electromagnetic Engineering and Science, Vol. 19, No. 1, pp. 48-55DOI
SAE International , 2019, Wireless Power transfer for Light-Duty Plug-in/Electric Vehicles and Alignment Methodology, J2954_201605.Google Search
Hueting. R.J.E., Aug 2004, Gate-drain charge analysis for switching in power trench MOSFETs, IEEE Transactions on Electron Devices, Vol. 51, No. 8, pp. 1323-1330DOI
Darwish. M., Jun 2004, W-gated trench power MOSFET (WFET), IEE Proceddings-Circuits, Devices and Systems, Vol. 151, No. 3, pp. 238-242DOI
Darwish. M., Apr 2003, A new power W-gated trench MOSFET (WMOSFET) with high switching performance, in Proc. ISPSD, Vol. cambridge, No. u.k., pp. 24-27DOI
Jiang. Q., Aug 2010, A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate, IEEE Transactions on Electron Devices, Vol. 57, No. 8, pp. 1972-1977DOI
Oka. T., Apr 2019, Recent development of vertical GaN power devices, Japanese Journal of Applied Physics, Vol. 58, No. sb, pp. sb0805Google Search
Sun. M., Apr 2017, High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates, Vol. 38, No. 4, pp. 509-512DOI
Oka. T., Feb 2014, Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV, Applied Physics Express, Vol. 7, No. 2, pp. 021002Google Search
Jung. J., Apr 2021, 6.5 kV SiC Power Devices with improved Blocking Characteristics against Process Deviations, Journal of Semiconductor Technology and Science, Vol. 21, No. 2, pp. 119-125DOI
Kim. T-H., Jun 2020, High Breakdown Voltage and Low On-resistance 4H-SiC UMOSFET with a Source-trench Oxide Structure, Journal of Semiconductor Technology and Science, Vol. 20, No. 3, pp. 1598-1657Google Search
Hasaneen. B. M., Mar 2008, Design and simulation of DC/DC boost converter, 2008 12th International Middle-East Power System Conference, Vol. ieee, pp. 335-340DOI