Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. 2021-08 (Vol.21 No.04)
  4. 10.5573/JSTS.2021.21.4.241
XML PDF INFO REF

REFERENCES

1 
Sze S. M., 1969, Physics of Semiconductor Devices, 1st edn, John WileyGoogle Search
2 
Reddick W. M., Amaratunga G. A. J., Jul 1995, Silicon surface tunnel transistor, Appl. Phys. Lett., Vol. 67, No. 4, pp. 494-496DOI
3 
Bhuwalka K. K., Sedlmaier S., Ludsteck A. K., Toksdorf C., Schulz J., I Eisele , Feb 2004, Vertical tunnel field effect transistor, IEEE Trans. Electron Devices, Vol. 51, No. 2, pp. 279-282DOI
4 
Choi W. Y., Park B.-G., Lee J. D., King Liu T.-J., Aug 2007, Tunneling field effect transistors (TFETs) with subthreshold swing (SS) less than 60 mv/dec, IEEE Electron Device Lett., Vol. 28, No. 8, pp. 743-745DOI
5 
Kim H. W., Kim J. H., Kim S. W., Sun M. C., Park E. H., Park B.-G., may 2014, Tunneling field-effect transistor with Si/SiGe material for high current drivability, Jpn. J. Appl. Phys., Vol. 53, No. 6s, pp. 06je12-1-06je12-4Google Search
6 
Bjork M. T., Knoch J., Schmid H., Riel H., Riess W., May 2008, Silicon nanowire tunneling field-effect transistor, Appl. Phys. Lett., Vol. 92, No. 19, pp. 193 504DOI
7 
Fulde M., Heigl A., Weis M., Wimshofer M., Arnim K. V., Nirschl Th., Sterkel M., Knoblinger G., Hansch W., Wachutka G., D , Schmitt-Landsiedel , pp 579–584, Fabrication, optimization and application of complementary multiple-gate tunneling FETs, in Proc. 2nd IEEE Int Nanoelectron. Conf., pp. 579-584DOI
8 
Gandhi R., Chen Z. X., Singh N., Banerjee K., Lee S. J., Apr 2011, Vertical Sinanowire n-type tunneling FETs with low subthreshold swing (≤ 50 mV/ decade) at room temperature, IEEE Electron Device Lett., Vol. 32, No. 4, pp. 437-439DOI
9 
Kane E. O., 1961, Theory of tunneling, J. Appl. Phys., Vol. 32, No. 1, pp. 83-91DOI
10 
Koswatta S. O., Lundstrom M. S., Nikonov D. E., Mar 2009, Performance comparison between p-i-n tunneling transistors and conventional MOSFETs, IEEE Trans. Electron Devices, Vol. 56, No. 3, pp. 456-465DOI
11 
Mookerjea S., Krishnan R., Datta S., Narayan V., Oct 2009, On enhanced Miller capacitance in inter-band tunnel transistors, IEEE Electron Device Lett., Vol. 30, No. 10, pp. 1102-1104Google Search
12 
Mookerjea S., Krishnan R., Datta S., Narayanan V., Sep 2009, Effective capacitance and drive current for Tunnel FET (TFET) CV/I estimation, IEEE Trans. Electron Devices, Vol. 56, No. 9, pp. 2092-2098DOI