A 99.93% Peak Current Efficiency Digital-LDO using Single VCO With Dual Frequency
Gain Control
CheonSongi1
LeeYoonsang1
HwangChanbin1
BaeJinsoo1
JangHyunsu1
ParkMyeongju1
KimBongsu1
AnGwangmyeong1
YuSeungmyeong1
AnJongchan1
SongJunyoung1,*
-
(Department of Electronics Engineering, Incheon National University, Incheon 22012,
Korea)
Copyright © The Institute of Electronics and Information Engineers(IEIE)
Index Terms
Digital low-dropout voltage regulator (DLDO), automatic frequency control, single voltage-controlled oscillator (VCO)
I. Introduction
Low-dropout voltage regulators (LDOs) have found widespread application in system-on-a-chip
(SoC) design because they provide minimal voltage ripple, fast transient response,
compact area requirements, and cost-effectiveness. As the industry trend shifts the
development of digital circuits operating at near-threshold supply voltages to mitigate
power consumption. So, traditional analog LDOs (ALDOs), composed of analog amplifiers,
encounter design challenges. In contrast, digital LDOs (DLDOs) can operate at lower
supply voltages, consuming less energy, facilitating seamless integration, and optimizing
SoC performance.
The DLDO typically operates at two distinct frequencies: the fast-sampling frequency
and the slow-sampling frequency. Initially, the fast-sampling frequency rapidly stabilizes
over or under-shooting states. When the feedback voltage deviates significantly from
the target voltage, coarse pass gates are controlled to create large current steps.
Hence, the coarse state demands brief operation at a high frequency to ensure low
power consumption. Conversely, the slow-sampling frequency controls the operation
of fine pass gates, which implement small current adjustments suited for handling
subtle changes characteristic of steady states. So, employing a single type of sampling
frequency can lead to suboptimal power efficiency. In the [1,2], DLDOs operate using an external clock signal. Consequently, DLDOs can remove the
need for clock-generating blocks but require additional clock pins. Other architectures
[3-5] use voltage-controlled oscillators (VCOs) as the clock generation block.
The proposed design employs a single VCO utilizing an automatically varying control
voltage block. As a result, this approach eliminates the need for additional control
voltage or external clock pins.
II. Architecture
An overall block diagram of the proposed DLDO is illustrated in Fig. 1. The DLDO comprises three comparators. The first comparator detects the difference
feedback output voltage (FB_OUT) with the medium reference voltage (REF_M) and then,
generates the VCO gain controller’s "SEL" signal. The second and third comparators
are utilized to identify over-shooting or under-shooting states. During over-shooting
or under-shooting events, the coarse pass gates adjust the voltage with wide steps
to approach the target voltage. And the fine pass gates precisely adjust to become
the target voltage.
The digital controller section operates based on the outputs of comparators and the
VCO, controlling both coarse and fine pass gates.
The VCO is configured with the negative gain operation, as depicted by the positive
voltage output (OUTP) signal in Fig. 2. As the control voltage decreases, the frequency increases.
A single-to-differential amplifier and a multiplexer are utilized to establish bidirectional
K$_{\mathrm{VCO}}$ behavior, allowing automatic adjustment of the VCO's input control
voltage based on the difference between reference and feedback voltages.
Lastly, resistors are utilized to generate the DLDO's feedback voltage, with resistor
values determined by the quiescent current. Quiescent current serves as a critical
figure of merit (FOM) measurement, whereas lower quiescent current yields a smaller
FOM. The C$_{\mathrm{load}}$(load capacitor) is set at 2 pF.
Fig. 1. Block diagram of proposed DLDO with a VCO.
Fig. 2. Relationship between the FB_OUT and VCO output frequency in proposed DLDO.
III. Circuit Description
The digital controller consists of coarse and fine control sections, each incorporating
a binary to thermal-weighted code converter. The converter increments one bit per
clock cycle based on a counter, while a thermal-weighted 256-bit signal controls each
pass gate, implemented through 256 transistors. Thermal-weighted code lends itself
well to parallel processing. Given the independence of each bit, parallel operations
become feasible, proving advantageous in swift computations.
The VCO gain controller manages the value of the control voltage. The first comparator’s
input voltages are FB_OUT and REF_M. When FB_OUT falls below (rises above) REF_M,
the ``SEL'' signal switches to ‘1’ (‘0’), and the output of the single-to-differential
amplifier becomes OUTP (OUTN). Illustrated in Fig. 3 is the relationship between the clock frequency and FB_OUT response. As the gap between
FB_OUT and REF_M values widens, the control voltage decreases, leading to a gradual
increase in the VCO's output frequency. This adaptive operation optimizes power consumption
by dynamically adjusting the operating frequency, eliminating the need for external
control voltage pins. The single-to-differential amplifier consists of two operational
transconductance amplifiers (OTAs) and resistors. The single-to-differential amplifier
is designed for linear operation within the VCO's operating ranges, enabling the VCO
gain controller to maintain linearity. The total power consumption of the VCO gain
controller is 104 ${\mu}$W, whereas that of a single VCO’s power is 267.3 ${\mu}$W
at 403 MHz. The VCO generates frequencies 238 MHz to 484 MHz, and power consumption
varies from 160.7 ${\mu}$W to 267.3 ${\mu}$W. Thus, the proposed design offers a 163.3~${\mu}$W
advantage over conventional approaches.
The second and third comparators share a common input, which is FB_OUT, while high
reference voltage (REF_H) and low reference voltage (REF_L) are fed into each of their
inputs. The FB_OUT over the REF_H or under the REF_L, then the digital controller
operating the coarse pass gates. Then when the FB_OUT is in between REF_H and REF_L,
the digital controller operates the fine pass gates.
Fig. 3. Concept of the relationship between the clock frequency and FB_OUT response.
VI. Simulation Result
The 65 nm CMOS process was used to implement the proposed DLDO that controls the output
to 1 V from 1.2~V supply. Fig. 4 shows the layout of the proposed DLDO. Upon stabilization of LDO_OUT, the frequency
proportionally decreases are shown in Fig. 5. Additionally, in Fig. 5(a) the voltage oscillations are due to the digital controller adjusting the code, which
sequentially turns the pass gates on and off. As indicated in the graph, the peak-to-peak
ripple voltage (${\Delta}$V$_{\mathrm{ripple}}$) is 598 ${\mu}$V. Table 1 summarizes the simulated performance metrics. Different from conventional design,
this work used a single VCO. The quiescent current is 11.3 ${\mu}$A. So, a peak current
efficiency at 20 mA is 99.93%. When the I$_{\mathrm{LOAD}}$ is from 10 mA to 20 mA,
LDO_OUT reaches a steady state and the frequency settles at 782 ns. On the other hand,
from 20 mA to 10 mA, the transient time is 430 ns. The proposed DLDO shows the lowest
15 fs of FOM and gets the largest peak current efficiency.
Fig. 4. Layout of proposed DLDO.
Fig. 5. Simulation results of (a) LDO_OUT; (b) frequency; (c) CLK signal.
Table 1. Performance comparison
V. Conclusions
This work introduces a DLDO structure designed to adaptive manage circuit frequency
utilizing a single VCO. Through the combination of a single-to-differential amplifier
and a multiplexer, the VCO gain controller selects one of the bidirectional K$_{\mathrm{VCO}}$
properties. Adaptive regulation of the control voltage enables fast transition times
during under or over-damped states. Simulated results show a peak current efficiency
of 99.93%, a quiescent current of 11.3 ${\mu}$A, a chip area of 0.099 mm$^{2}$, a
FOM is 15 fs, and a transition response of 782 ns.
ACKNOWLEDGMENTS
This work was supported by the Technology Innovation Program (20019363, Research
on system of test equipment for high speed memory) funded By the Ministry of Trade,
Industry & Energy(MOTIE, Korea), and the chip fabrication was supported by the IC
Design Education Center (IDEC), Korea.
References
M. Huang, Y. Lu, S. -W. Sin, U. Seng-Pan and R. P. Martins, "A Fully Integrated Digital
LDO With Coarse–Fine-Tuning and Burst-Mode Operation," in IEEE Transactions on Circuits
and Systems II: Express Briefs, vol. 63, no. 7, pp. 683-687, July 2016.
Z. Ding, W. Rhee and Z. Wang, "A VCO-dedicated digital LDO with multi-comparator coarse
loop and 1-bit ΔΣ fine loop for robust frequency generation," 2018 IEEE MTT-S International
Wireless Symposium (IWS), pp. 1-4.
J. -G. Kang, J. Park, M. -G. Jeong and C. Yoo, "Digital Low-Dropout Regulator With
Voltage-Controlled Oscillator Based Control," in IEEE Transactions on Power Electronics,
vol. 37, no. 6, pp. 6951-6961, June 2022.
S. Kundu and C. H. Kim, "A multi-phase VCO quantizer based adaptive digital LDO in
65nm CMOS technology," 2017 IEEE International Symposium on Circuits and Systems (ISCAS),
pp. 1-4.
S. Kundu, M. Liu, S. -J. Wen, R. Wong and C. H. Kim, "A Fully Integrated Digital LDO
With Built-In Adaptive Sampling and Active Voltage Positioning Using a Beat-Frequency
Quantizer," in IEEE Journal of Solid-State Circuits, vol. 54, no. 1, pp. 109-120,
Jan. 2019.
Songi Cheon undergraduate Student in electronics engineering from Incheon National
University, Incheon, South Korea, in 2024. Where she is currently pursuing the B.S.
degree in integrated circuit and systems Lab. Her research interests include high-speed
wireline transceivers and low-dropout regulators.
Yoonsang Lee received the B.S. degrees in electronics engineering from Incheon
National University, Incheon, South Korea, in 2024. Where he is currently pursuing
the M.S. degree in integrated circuit and systems Lab. His research on clock generators,
and high-speed wireline transceivers.
Chanbin Hwang received the B.S. degrees in mechanical engineering from Incheon
National University, Incheon, South Korea, in 2024. Where he is currently pursuing
the M.S. degree in integrated circuit and systems Lab. His research interests include
Power management systems.
Hyunsu Jang received the B.S. degrees in electronics engineering from Incheon
National University, Incheon, South Korea, in 2023. Where he is currently pursuing
the M.S. degree in integrated circuit and systems Lab. He is currently conducting
research on Clock and Data Recovery circuit and high-speed wireline interface.
Jinsoo Bae received the B.S. degree in electronics engineering and mathematics
from Incheon National University, Incheon, South Korea, in 2023. Where he is currently
pursuing the M.S. degree in integrated circuit and systems Lab. He is currently conducting
research on clock generators in memory interfaces and high-speed wireline transceivers.
Myeongju Park undergraduate Student in electronics engineering from Incheon National
University, Incheon, South Korea, in 2024. Where he is currently pursuing the B.S.
degree in integrated circuit and systems Lab. He is currently conducting research
on Clock and Data Recovery circuit and high-speed wireline interface.
Bongsu Kim received the B.S. degrees in mechanical engineering from Incheon National
University, Incheon, South Korea, in 2023. Where he is currently pursuing the M.S.
degree in integrated circuit and systems Lab. His research interests include high-speed
wireline transceivers and low-dropout regulators.
Jongchan An received the B.S. and M.S. degrees in electronics engi-neering from
Incheon National University, Incheon, South Korea, in 2021, 2023, respectively. Where
he is currently pursuing the Ph.D. degree in integrated circuit and systems Lab. He
is currently conducting research on clock generators, clock and data recovery circuit
in memory interfaces and high-speed wireline transceivers.
SeungMyeong Yu received the B.S. and M.S. degree in electronics engineering from
Incheon National University, Incheon, South Korea, in 2019 and 2021, respectively,
where he is currently pursuing the Ph.D. degree in integrated circuits and systems.
His research interests include memory interfaces, high-speed wireline transceivers.
Junyoung Song (S’08, M’14) received the B.S. and M.S. degrees in electronics engineering
and the Ph.D. degree in electrical and computer engineering from Korea University,
Seoul, South Korea, in 2008, 2010, and 2014, respectively. In 2012, he was a Visiting
Scholar with the University of California at Los Angeles, Los Angeles, CA, USA. In
2014, he joined the Analog Serial I/O Group, Intel Corporation, San Jose, CA, where
he was involved in the wireline transceiver design for high-performance FPGA. Since
2018, he has been with the School of Electronics Engineering, Incheon National University,
Incheon, South Korea, where he is currently an Associate Professor. He has coauthored
the book High-Bandwidth Memory Interface (Springer, 2013). His research interests
include the high-speed wireline transceiver, memory, and clock generator. Dr. Song
was a recipient of the Minister of Ministry of Education, Science and Technology Award
at the Korea Semiconductor Design Contest in 2011 and the IEEE Seoul Section Student
Paper Contest Bronze Award in 2011 and 2013. He is serving on the Technical Program
Committee of the IEEE Asian Solid-State Circuits Conference.