Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. JSTS 2025-02(Vol.25 No.01)
PDF INFO
Title Area-optimized and Reliable Computing-in-memory Platform Based on STT-MRAM
Authors (Dasom Ahn) ; (Seongmin Ahn) ; (Taehui Na)
DOI https://doi.org/10.5573/JSTS.2025.25.1.56
Page pp.56-65
ISSN 1598-1657
Keywords Area-optimized; computing-in-memory (CIM); reference scheme; reliable; spin-transfer torque magnetic random access memory (STT-MRAM)
Abstract In the era of rapidly increasing data volume, complementary metal-oxide-semiconductor-based von Neumann structures have encountered several limitations, such as increased leakage current and data movement overhead. To solve this problem, computing-in-memory (CIM) that performs simple operations in memory has emerged.
In this paper, we propose an area optimized CIM platform based on spin-transfer torque magnetic random access memory (STT-MRAM). Compared with previous CIM, the proposed CIM platform is area optimized by performing AND/OR logic functions using fewer reference word lines, and it uses an offset-canceling current-sampling sense amplifier to provide more reliable operation. Monte Carlo HSPICE simulation results based on industry-compatible 28-nm model parameters demonstrate the functionality and performance of the proposed CIM platform.