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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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Title Improving Z-Interference and Program Disturbance in 3D NAND Flash Memory using Asymmetric Program-pass Voltage
Authors (Hyeon Seo Yun) ; (Jong Kyung Park)
DOI https://doi.org/10.5573/JSTS.2024.24.6.565
Page pp.565-571
ISSN 1598-1657
Keywords 3D NAND flash memory; asymmetric program-pass voltage; Z-interference; program disturbance
Abstract In this study, we address both Z-interference and program disturbance in 3D NAND Flash Memory by proposing an innovative asymmetric program-pass voltage technique. Utilizing Technology Computer-Aided Design (TCAD) simulations, our approach applies varying pass voltages to adjacent word lines, effectively reducing Z-interference and program disturbances. This method enhances cell reliability and performance, marking a significant advancement in 3D NAND Flash Memory technology. Our findings emphasize the critical role of program operation conditions in memory design, offering a viable solution to the challenges posed by increased storage density demands.