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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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Title U-shaped Reconfigurable Field-effect Transistor
Authors Daehoon Wee(Daehoon Wee) ; Hui Tae Kwon(Hui Tae Kwon) ; Won Joo Lee(Won Joo Lee) ; Hyun-Seok Choi(Hyun-Seok Choi) ; Yu Jeong Park(Yu Jeong Park) ; Boram Kim(Boram Kim) ; Yoon Kim(Yoon Kim)
DOI https://doi.org/10.5573/JSTS.2019.19.1.063
Page pp.63-68
ISSN 1598-1657
Keywords 3-D MOSFET ; reconfigurable filedeffect transistor (RFET) ; vertically stacked gates
Abstract We propose a novel reconfigurable fieldeffect transistor (RFET) featuring two verticallystacked gates and a U-shaped nanowire channel. Conventional RFETs have a relatively large unit cell size due to their configuration with multiple gates. However, the proposed device can solve this inherent disadvantage of RFET. In addition, it can have a long enough channel without additional area, so that excellent characteristics can be obtained without the short channel effects. The characteristics of the proposed device were examined by 3-D technology computer-aided design (TCAD) device simulation. The effect of some device parameters on the device performance were investigated. Also, the fabrication method is proposed.