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B. Liu and H. C. Zeng, “Hydrothermal Synthesis of ZnO Nanorods in the Diameter Regime of 50 nm”, J. Am. Chem. Soc., 125, 4430 (2003).DOI
Z. Y. Jiang, T. Xu, Z. X. Xie, Z. W. Lin, X. Zhou, X. Xu, R. B. Huang and L. S. Zheng, “Molten Salt Route toward the Growth of ZnO Nanowires in Unusual Growth Directions”, J. Phys. Chem. B, 109, 23269 (2005).DOI
H. Huang, S. Yang, J. Gong, H. Liu, J. Duan, X. Zhao and R. Zhang, “Controllable Assembly of Aligned ZnO Nanowires/Belts Arrays”, J. Phys. Chem. B, 109, 20746 (2005).DOI
D. C. Look, J. W. Hemsky and J. R. Sizelove, “Residual Native Shallow Donor in ZnO”, Phys. Rev. Lett., 82, 2552 (1999).DOI
C. Coksun, D. C. Look, G. C. Farlow and J. R. Sizelove, “Radiation hardness of ZnO at low temperatures”, Semicond. Sci. Technol., 19, 752 (2004).DOI
S. O. Kucheyev, C. Jagadish, J. S. Williams, P. N. K. Deenapanray, M. Yano, K. Koike, S. Sasa, M. Inoue and K. Ogata, “Implant isolation of ZnO”, J. Appl. Phys., 93, 2972 (2003).DOI
J. F. Ziegler, SRIM2008: Stopping and Range of Ions in Matter, available at
A. Valletta, P. Gaucci, L. Mariucci, G. Fortunato, and F. Templier, " “Hump” characteristics and edge effects in polysilicon thin film transistors", Journal of Applied Physics, 104, 124511 (2008).DOI
H. Im, H. S. Song, J. W. Jeong, Y. W. Hong, and Y. T. Hong, "Effects of defect creation on bidirectional behavior with hump characteristics of InGaZnO TFTs under bias and thermal stress", Japanese Journal of Applied Physics, 54, 03CB03 (2015).DOI
M. Mativenga, M. J. Seok, J. Jang, "Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin fim transistors with various channel widths", Appl. Phys. Lett., 99, 122107 (2011).DOI
C. F. Huang, C. Y. Peng, Y. J. Yang, H. C. Sun, H. C. Chang, P. S. Kuo, H. L. Chang, C. Z. Liu, and C. W. Liu, “Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors”, IEEE Electron Device Lett., 29, 1332 (2008).DOI
M. Mativenga, M. H. Choi, J. Jang, R. Mruthyunjaya, T. J. Tredwell, E. Mozdy, and C. Kosik-Williams, “Degradation Model of Self-Heating Effects in Silicon-on-Glass TFTs”, IEEE Trans. Electron Devices, 58, 2440 (2011).DOI
Y. M. Kim, K. S. Jeong, H. J. Yun, S. D. Yang, S. Y. Lee, Y. C. Kim, J. K. Jeong, H. D. Lee and G. W. Lee, “Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors”, Appl. Phys. Lett., 102, 173502 (2013).DOI
T. Szorenyi, L. D. Laude, I. Bertoti, Z. Kantor and Zs. Geretovszky, “Excimer laser processing of indium-tin-oxide films: An optical investigation”, J. Appl. Phys., 78, 6211 (1995).DOI
L. Liu, Z. Mei, A. Tang, A. Azarov, A. Kuznetsov, Q. K. Xue, and X. Du, "Oxygen vacancies: the origin of n-type conductivity in ZnO", Phys. Rev. B., 93, 235305 (2016)DOI
B. J. Jin, S. H. Bae, S. Y. Lee, and S. Im, "Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition", Mater. Sci. Eng. B, 71, 301-305 (2000).DOI
Y. K. Moon, S. Lee, D. Y. Moon, W. S. Kim, B. W. Kang and J. W. Park, “Effects of proton irradiation on indium zinc oxide-based thin-film transistors”, Surf. Coat. Tech., 205, S109 (2010).DOI
Y. K. Moon, D. Y. Moon, S. Lee and J. W. Park, “Effects of High-Dose Proton Irradiation on ZnO Thin-Film Transistors”, J. Korean Phys. Soc., 54, 1059 (2009).DOI