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McKee S. A., 2004., Reflections on the memory wall, in Proceedings of the 1st conference on Computing frontiers, pp. 162DOI
Pan F., Gao S., Chen C., Song C., Zeng F., 2014, Recent progress in resistive random access memories: Materials, switching mechanisms, performance, Mater. Sci. Eng. R-Rep., Vol. 83, pp. 1-59DOI
Wong H.-S. P., Lee H.-Y., Yu S., Chen Y.-S., Wu Y., Chen P.-S., Lee B., Chen F. T., Tsai M.-J., 2012, Metal-oxide RRAM, Proc. IEEE, Vol. 100, No. 6, pp. 1951-1970DOI
Jeon K., Kim J., Ryu J. J., Yoo S.-J., Song C., Yang M. K., Jeong D. S., Kim G. H., 2021, Self-rectifycing resistive memroy in passive crossbar arrays, Nat. Commun., Vol. 12, pp. 2968Google Search
Duan Y., Gao H., Guo J., Yang M., Yu Z., Shen X., Wu S., Sun Y., Ma X., Yang Y., 2021, Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM, Appl. Phys. Lett., Vol. 118, pp. 013501DOI
Le B. Q., Levy A., Wu T. F., Radway R. M., Hsieh E. R., Zheng X., Nelson M., Raina P., Wong H.-S. P., Wong S., Mitra S., 2021, RADAR: A fast and energy-efficient programming technique for multiple bits-per-cell RRAM arrays, IEEE Trans. Electron Devices, Vol. 68, No. 9, pp. 4397-4403DOI
hsieh E. R., Zheng X., Le B. Q., Shih Y. C., Radway R. M., Nelson M., Mitra S., Wong S., 2021, Four-bits-per-memory one-transistor-and-eight-resistive-random-access-memory (1T8R) array, IEEE Electron Devices Lett., Vol. 42, No. 3, pp. 335-338DOI
Choi Y., Song I., Park M.-H., Chung H., Chang S., Cho B., Kim J., Oh Y., Kwon D., Sunwoo J., 2012, A 20nm 1.8 V 8Gb PRAM with 40MB/s program bandwidth, in 2012 IEEE International Solid-State Circuits Conference, pp. 46-48DOI
Sarwat S. G., 2017, Materials science and engineering of phase change random access memory, Mater. Sci. Technol., Vol. 33, No. 16, pp. 1890-1906DOI
Chen X., Ding F., Huang X., Lin X., Wang R., Chan M., Zhang L., Huang R., 2021, A robust and efficient compact mode lfor phase-change memory circuit simulations, IEEE Trans. Electron Devices, Vol. 68, No. 9, pp. 4404-4410DOI
Khvalkovskiy A., Apalkov D., Watts S., Chepulskii R., Beach R., Ong A., Tang X., Driskill-Smith A., Butler W., Visscher P., 2013., Basic principles of STT-MRAM cell operation in memory arrays, J. Phys. D: Appl. Phys., Vol. 46, No. 7, pp. 074001DOI
Apalkov D., Khvalkovskiy A., Watts S., Nikitin V., Tang X., Lottis D., Moon K., Luo X., Chen E., Ong A., 2013, Spin-transfer torque magnetic random access memory (STT-MRAM), ACM J. Emerg. Technol. Comput. Syst. (JETC), Vol. 9, No. 2, pp. 1-35DOI
Pourmeidani H., Demara R. F., 2021, High-accuracy deep belief network: Fuzzy neural networks using MRAM-based stochastic neurons, IEEE J. Explor. Solid-State Comput. Devices Circuits, Vol. 7, No. 2, pp. 125-131DOI
Na T., Kang S. H., Jung S.-O., 2020, Distribution analysis and multiple-point tail fitting yield estimation method for STT-MRAM, J. Semicond. Technol. Sci., Vol. 20, No. 3, pp. 271-280DOI
Tan A. J., Chatterjee K., Zhou J., Kwon D., Liao Y.-H., Cheema S., Hu C., Salahuddin S., 2019, Experimental demonstration of a ferroelectric HfO$_{2}$-based content addressable memory cell, IEEE Electron Device Lett., Vol. 41, No. 2, pp. 240-243DOI
Bae J.-H., Kwon D., Jeon N., Cheema S., Tan A. J., Hu C., Salahuddin S., 2020, Highly scaled, high endurance, ${\Omega}$-gate, nanowire ferroelectric FET memory transistors, IEEE Electron Device Lett., Vol. 41, No. 11, pp. 1637-1640DOI
Nguyen M.-C., Lee K., Kim S., Youn S., Hwang Y., Kim H., Choi R., Kwon D., 2022, Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices, IEEE Electron Device Lett., Vol. 43, No. 1, pp. 17-20DOI
Lee D. K., Kim M.-H., Kim T.-H., Bang S., Choi Y.-J., Kim S., Cho S., Park B.-G., 2019, Synaptic behaviors of HfO$_{2}$ ReRAM by pulse frequency modulation, Solid-State Electron., Vol. 154, pp. 31-35DOI
Shim W., Luo Y., Seo J.-S., Yu S., 2020, Investigation of read disturb and bipolar read scheme on multilevel RRAM-based deep learning inference engine, IEEE Trans. Electron Devices, Vol. 67, No. 6, pp. 2318-2323DOI
Sarkar B., Lee B., Misra V., 2015., Understanding the gradual reset in Pt/Al$_{2}$O$_{3}$/Ni RRAM for synaptic applications, Semicond. Sci. Technol., Vol. 30, No. 10, pp. 105014DOI
Mahata C., Kim M.-H., Bang S., Kim T.-H., Lee D. K., Choi Y.-J., Kim S., Park B.-G., 2019., SiO$_{2}$ layer effect on atomic layer deposition Al$_{2}$O$_{3}$-based resistive switching memory, Appl. Phys. Lett., Vol. 114, No. 18, pp. 182102DOI
Kim T.-H., Kim S., Park B.-G., 2021, Improved rectification characteristics by engineering energy barrier height in TiO$_{x}$-based RRAM, Microelectron. Eng., Vol. 237, pp. 111498DOI
Kim T.-H., Kim M.-H., Bang S., Lee D. K., Kim S., Cho S., Park B.-G., 2020, Fabrication and characterization of TiO$_{x}$ memristor for synaptic device application, IEEE Trans. Nanotechnol.DOI
Park J., Kim T.-H., Kim S., Lee G. H., Nili H., Kim H., 2021, Conduction mechanism effect on physical unclonable function using Al$_{2}$O$_{3}$/TiO$_{\mathrm{X}}$ memristors, Chaos Solitons Fractals, Vol. 152, pp. 111388DOI
Kim T.-H., Lee J., Kim S., Park J., Park B.-G., Kim H., 2021., 3-bit multilevel operation with accurate programming scheme in TiO$_{x}$/Al$_{2}$O$_{3}$ memristor crossbar array for quantized neuromorphic system, Nanotechnol., Vol. 32, No. 29, pp. 295201DOI
Kim T.-H., Kim S., Hong K., Park J., Hwang Y., Park B.-G., Kim H., 2021, Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system, Chaos Solitons Fractals, Vol. 153, pp. 111587DOI
Kim S., Kim T.-H., Kim H., Park B.-G., 2020., Current suppressed self-compliance characteristics of oxygen rich TiO$_{y}$ inserted Al$_{2}$O$_{3}$/TiO$_{x}$ based RRAM, Appl. Phys. Lett., Vol. 117, No. 20, pp. 202106DOI
Kim H., Mahmoodi M., Nili H., Strukov D. B., 2021, 4K-memristor analog-grade passive crossbar circuit, Nat. Commun., Vol. 12, pp. 5198DOI
Zhang K., Sun K., Wang F., Han Y., Jiang Z., Zhao J., Wang B., Zhang H., Jian X., Wong H. P., 2015, Ultra-low power Ni/HfO$_{2}$/TiO$_{x}$/TiN resistive random access memory with sub-30-nA reset current, IEEE Electron Device Lett., Vol. 36, No. 10, pp. 1018-1020DOI
Ding X., Feng Y., Huang P., Liu L., Kang J., 2019, Low-power resistive switching characteristic in HfO$_{2}$/TiO$_{x}$ Bi-layer resistive random-access memory, Nanoscale Res. Lett., Vol. 14, No. 1, pp. 1-7DOI
Ryu H., Kim S., 2020., Self-rectifying resistive switching and short-term memory characteristics in Pt/HfO$_{2}$/TaO$_{x}$/TiN artificial synaptic device, Nanomaterials, Vol. 10, No. 11, pp. 2159DOI
Kim S., Abbas Y., Jeon Y.-R., Sokolov A. S., Ku B., Choi C., 2018., Engineering synaptic characteristics of TaO$_{x}$/HfO$_{2}$ bi-layered resistive switching device, Nanotechnol., Vol. 29, No. 41, pp. 415204DOI
Ryu H., Kim S., 2021, Implementation of a reservoir computing system using the short-term effects of Pt/HfO$_{2}$/TaO$_{x}$/TiN memristors with self-rectification, Chaos Solitons Fractals, Vol. 150, pp. 111223DOI
Deng Y., Huang P., Chen B., Yang X., Gao B., Wang J., Zeng L., Du G., Kang J., Liu X., 2012, RRAM crossbar array with cell selection device: A device and circuit interaction study, IEEE Trans. Electron Devices, Vol. 60, No. 2, pp. 719-726DOI
Kim T.-H., Nili H., Kim M.-H., Min K. K., Park B.-G., Kim H., 2020., Reset-voltage-dependent precise tuning operation of TiO$_{x}$/Al$_{2}$O$_{3}$ memristive crossbar array, Appl. Phys. Lett., Vol. 117, No. 15, pp. 152103DOI
Chastain J., King Jr R. C., 1992, Handbook of X-ray photoelectron spectroscopy, Perkin-Elmer Corporation, Vol. 40, pp. 221Google Search
Kim T., Kim H., Kim J., Kim J.-J., 2017, Input Voltage Mapping Optimized for Resistive Memory-Based Deep Neural Network Hardware, IEEE Electron Device Lett., Vol. 38, No. 9, pp. 1228-1231DOI
Xu B., Sohn H. Y., Mohassab Y., Lan Y., 2016, Structures, preparation and applications of titanium suboxides, RSC Adv., Vol. 6, No. 83, pp. 79706-79722DOI
Chong L. H., Mallik K., de Groot C H , Kersting R., 2006, The structural and electrical properties of thermally grown TiO$_{2}$ thin films, J. Phys.-Condes. Matter, Vol. 18, No. 2, pp. 645-657DOI
Gao Y., Kavehei O., Al-Sarawi S. F., Ranasinghe D. C., Abbott D., 2016, Read operation performance of large selectorless cross-point array with self-rectifying memristive device, Integration, Vol. 54, pp. 56-64DOI
Zhou J., Kim K.-H., Lu W., 2014, Crossbar RRAM arrays: Selector device requirements during read operation, IEEE Trans. Electron Devices, Vol. 61, No. 5, pp. 1369-1376DOI