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Koo J. H., Kim D. C., Shim H. J., Kim T.-H., Kim D.-H., Jul 2018, Flexible and Stretchable Smart Display: Materials, Fabrication, Device Design, and System Integration, Adv. Funct. Mater., Vol. 28, No. 35, pp. 1801834DOI
Choi M. K., Yang J., Hyeon T., Kim D.-H., Apr 2018, Flexible Quantum Dot Light-Emitting Diodes for Next-Generation Displays, npj Flexible Electron., Vol. 2, No. 1, pp. 10DOI
Lee S., Kwon J. H., Kwon S., Choi K. C., May 2017, A Review of Flexible OLEDs Toward Highly Durable Unusual Displays, IEEE Trans. Electron Devices, Vol. 64, No. 5, pp. 1922-1931DOI
Mizukami M., Cho S., Watanabe K., Abiko M., Suzuri Y., Tokito S., Kido J., Jan 2018, Flexible Organic Light-Emitting Diode Displays Driven by Inkjet-Printed High-Mobility Organic Thin-Film Transistors, IEEE Electron Device Lett., Vol. 39, No. 1, pp. 39-42DOI
Takei K., Honda W., Harada S., Arie T., Akita S., Nov 2014, Toward Flexible and Wearable Human-Interactive Health-Monitoring Devices, Adv. Healthc. Mater., Vol. 4, No. 4, pp. 487-500DOI
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Chen H.-W., Lee J.-H., Lin B.-Y., Chen S., Wu S.-T., Dec 2017, Liquid Crystal Display and Organic Light-Emitting Diode Display: Present Status and Future Perspectives, Light. Sci. Appl, Vol. 7, No. 3, pp. 17168-17168DOI
Geng D., Chen Y. F., Mativenga M., Jang J., Aug 2015, 30 μm -Pitch Oxide TFT-Based Gate Driver Design for Small-Size, High-Resolution, and Narrow-Bezel Displays, Vol. 36, Vol. no. 8, pp. 805-807Google Search
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Hirao T., Furuta M., Hiramatsu T., Matsuda T., Li C., Furuta H., Hokari H., Yoshida M., Ishii H., Kakegawa M., Nov 2008, Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs, IEEE Trans. Electron Devices, Vol. 55, No. 11, pp. 3136-3142DOI
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Kwon J. Y., Son K. S., Jung J. S., Kim T. S., Ryu M. K., Park K. B., Yoo B. W., Kim J. W., Lee Y. G., Park K. C., Lee S. Y., Kim J. M., Dec 2008, Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display, IEEE Electron Device Lett., Vol. 29, No. 12, pp. 1309-1311DOI
Steudel S., van der Steen J.-L. P. J., Nag M., Ke T. H., Smout S., Bel T., van Diesen K., de Haas G., Maas J., de Riet J., Rovers M., Verbeek R., Huang Y.-Y., Chiang S.-C., Ameys M., De Roose F., Dehaene W., Genoe J., Heremans P., Gelinck G., Kronemeijer A. J., May 2017, Power Saving through State Retention in IGZO-TFT AMOLED Displays for Wearable Applications, J. Soc. Inf. Disp., Vol. 25, No. 4, pp. 222-228DOI
Hoshino K., Hong D., Chiang H. Q., Wager J. F., Jul 2009, Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors, IEEE Trans. Electron Devices, Vol. 56, No. 7, pp. 1365-1370DOI
Tsao S. W., Chang T. C., Huang S. Y., Chen M. C., Chen S. C., Tsai C. T., Kuo Y. J., Chen Y. C., Wu W. C., Dec 2010, Hydrogen-Induced Improvements in Electrical Characteristics of a-IGZO Thin-Film Transistors, Solid State Electron., Vol. 54, No. 12, pp. 1497-1499DOI
Yao J., Xu N., Deng S., Chen J., She J., Shieh H. D., Liu P., Huang Y., Apr 2011, Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy, IEEE Trans. Electron Devices, Vol. 58, No. 4, pp. 1121-1126DOI
Cho Y.-J., Shin J.-H., Bobade S. M., Kim Y.-B., Choi D.-K., May 2009, Evaluation of Y2O3 gate Insulators for a-IGZO Thin Film Transistors, Thin Solid Films., Vol. 517, No. 14, pp. 4115-4118DOI
Yu M., Yeh Y., Cheng C., Lin C., Ho G., Lai B. C., Leu C., Hou T., Chan Y., Jan 2012, Amorphous InGaZnO Thin-Film Transistors Compatible with Roll-to-Roll Fabrication at Room Temperature, IEEE Electron Device Lett., Vol. 33, No. 1, pp. 47-49DOI
Lee J. S., Chang S., Koo S., Lee S. Y., Mar 2010, High-Performance a-IGZO TFT With ZrO$_{2}$ Gate Dielectric Fabricated at Room Temperature, IEEE Electron Device Lett., Vol. 31, No. 3, pp. 225-227DOI
Kim B., Choi S. C., Lee S., Kuk S., Jang Y. H., Kim C., Han M., Aug 2011, A Depletion-Mode a-IGZO TFT Shift Register With a Single Low-Voltage-Level Power Signal, IEEE Electron Device Lett., Vol. 32, No. 8, pp. 1092-1094DOI
Mativenga M., An S., Jang J., Dec 2013, Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity, IEEE Electron Device Lett., Vol. 34, No. 12, pp. 1533-1535DOI
Seok M. J., Choi M. H., Mativenga M., Geng D., Kim D. Y., Jang J., Aug 2011, A Full-Swing a-IGZO TFT-Based Inverter with a Top-Gate-Bias-Induced Depletion Load, IEEE Electron Device Lett., Vol. 32, No. 8, pp. 1089-1091DOI
Kang D. H., Kang I., Ryu S. H., Jang J., Oct 2011, Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits, IEEE Electron Device Lett., Vol. 32, No. 10, pp. 1385-1387DOI
Park J.-S., Jeong J. K., Mo Y.-G., Kim H. D., Kim S.-I., Jun 2007, Improvements in the Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Ar Plasma Treatment, Appl. Phys. Lett., Vol. 90, No. 26, pp. 262106DOI
Pu H., Zhou Q., Yue L., Zhang Q., Oct 2013, Investigation of Oxygen Plasma Treatment on the Device Performance of Solution-Processed a-IGZO Thin Film Transistors, Appl. Surf. Sci., Vol. 283, pp. 722-726DOI
Azarhoushang B., Akbari J., Ultrasonic-Assisted Drilling of Inconel 738-LC, Int. J. Mach. Tools. ManufDOI
Dhuria G., Singh R., Batish A., Nov 2016, Predictive Modeling of Surface Roughness in Ultrasonic Machining of Cryogenic Treated Ti-6Al-4V, Eng. Computer (Swansea). Vol. 33, Vol. no. 8, pp. 2377-2394DOI
Lotya M., Hernandez Y., King P. J., Smith R. J., Nicolosi V., Karlsson L. S., Blighe F. M., De S., Wang Z., McGovern I. T., Duesberg G. S., Coleman J. N., Feb 2009, Liquid Phase Production of Graphene by Exfoliation of Graphite in Surfactant/Water Solutions, J. Am. Chem. Soc, Vol. 131, No. 10, pp. 3611-3620DOI
Moon Y.-K., Lee S., Kim W.-S., Kang B.-W., Jeong C.-O., Lee D.-H., Park J.-W., Jul 2009, Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator, Appl. Phys. Lett., Vol. 95, No. 1, pp. 013507DOI
Niu L., Coleman J. N., Zhang H., Shin H., Chhowalla M., Zheng Z., Jan 2016, Production of Two-Dimensional Nanomaterials via Liquid-Based Direct Exfoliation, Small, Vol. 12, No. 3, pp. 272-293DOI
Oh S., Choi G., Hwang H., Lu W., Jang J., Aug 2013, Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing, IEEE Trans. Electron Devices, Vol. 60, No. 8, pp. 2537-2541DOI
Sabyrov N., Jahan M. P., Bilal A., Perveen A., pp Feb 2019, Ultrasonic vibration assisted electro-discharge machining (EDM)-An overview, Materials (Basel), Vol. 12DOI
Tenent R. C., Barnes T. M., Bergeson J. D., Ferguson A. J., To B., Gedvilas L. M., Heben M. J., Blackburn J. L., Aug 2009, Ultrasmooth, Large-Area, High-Uniformity, Conductive Transparent Single-Walled-Carbon-Nanotube Films for Photovoltaics Produced by Ultrasonic Spraying, Adv. Mater., Vol. 21, No. 31, pp. 3210-3216DOI
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Heo K.-J., Kim H.-S., Lee J.-Y., Kim S.-J., 2020, Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory, Sci. Rep., Vol. 10, No. 1, pp. 9276DOI
Lee E., Kim T. H., Lee S. W., Kim J. H., Kim J., Jeong T. G., Ahn J.-H., Cho B., 2019, Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing, Nano Convergence, Vol. 6, No. 1, pp. 24DOI
Zan H.-W., Tsai W.-W., Chen C.-H., Tsai C.-C., Oct 2011, Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors, Adv. Mater., Vol. 23, No. 37, pp. 4237-4242DOI
Chiu C. J., Chang S. P., Chang S. J., Nov 2010, High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric, Vol. 31, Vol. no. 11, pp. 1245-1247DOI
Yu X., Marks T. J., Facchetti A., Mar 2016, Metal Oxides for Optoelectronic Applications, Nat. Mater., Vol. 15, No. 4, pp. 383-396DOI