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Disney D., Shen Z. J., Sept 2013, Review of Silicon Power Semiconductor Technologies for Power Supply on Chip and Power Supply in Package Applications, IEEE Trans. on Power Electron., Vol. 28, No. 9, pp. 4168-4181DOI
Zhu R., Khemka V., Khan T., Huang W., Cheng X., Hui P., Ger M., Rodriquez P., Jun 2010, A high voltage super-junction NLDMOS device implemented in 0.13 μm SOI based smart power IC technology, in Proc. IEEE 22nd Int. Symp. Power Semicond. Devices ICs (ISPSD), pp. 79-82Google Search
Nikhil K. S., DasGupta N., DasGupta A., Chakravorty A., Nov 2018, SOI-LDMOS Transistors With Optimized Partial n+Buried Layer for Improved Performance in Power Amplifier Applications, IEEE Trans. Electron. Devices, Vol. 65, No. 11, pp. 4931-4937DOI
Ludikhuize A. W., May 2000, A review of RESURF technology, in Proc. IEEE 12th Int. Symp. Power Semicond. Devices ICs (ISPSD), pp. 11-18DOI
Hara K., Kakegawa T., Wada S., Utsumi T., Oda T., May 2017, Low on-resistance high voltage thin layer SOI LDMOS transistors with stepped field plates,, in Proc. IEEE 29th Int. Symp. Power Semicond. Devices ICs (ISPSD), Vol. , No. , pp. 307-310DOI
Duan B., Cao Z., Yuan X., Yuan S., Yang Y., Jan 2015, New Superjunction LDMOS Breaking Silicon Limit by Electric Field Modulation of Buffered Step Doping, IEEE Electron Device Lett., Vol. 36, No. 1, pp. 47-49DOI
Coffie R., Aug 2014, Slant Field Plate Model for Field-Effect Transistors, IEEE Trans. Electron. Devices, Vol. 61, No. 8, pp. 2867-2872DOI
Xia C., Oct 2014, Improvement of SOI Trench LDMOS Performance With Double Vertical Metal Field Plate, IEEE Trans. Electron. Devices, Vol. 61, No. 10, pp. 3477-3482DOI
Chen X., Jun. 1, 1993, Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity, U.S. Patent 6936907 [Online]. Available: Search
Li J., Li P., Huo W., Zhang G., Zhai Y., Chen X., Sept 2011, Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric, IEEE Electron Device Lett., Vol. 32, No. 9, pp. 1266-1268DOI
Kim J., Kim S. G., Song Q. S., Lee S. Y., Koo J. G., Ma D. S., Sept 1999, Improvement of P-channel SOI LDMOS transistor by adapting a new tapered oxide technique, IEEE Trans. Electron Devices, Vol. 46, No. 9, pp. 1890-1894DOI
Pontes F. M., Lee E. J. H., Leite E. R., Longo E., Varela J. A., Oct 2000, High dielectric constant of SrTiO3 thin films prepared by chemical process, J. Materials Sci., Vol. 35, No. 19, pp. 4783-4787DOI
Chu F., Chen C., Liu X., Mar 2014, Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation, J. Semicond., Vol. 35, No. 3, pp. 034007DOI
Cai X., Frisbie C. D., Leighton C., Dec 2006, Optimized dielectric properties of srtio3:nb/srtio3 (001) films for high field effect charge densities, Appl. Phys. Lett., Vol. 89, No. 24, pp. 242915-DOI
Zhang D., Hu W., Meggs C., Su B., Price T., Iddles D., Lancaster M. J., Button T. W., 2007, Fabrication and characterisation of barium strontium titanate thick film device structures for microwave applications, J. Euro. Ceramic Society, Vol. 27, No. 2-3, pp. 1047-1051DOI
N.V Giridharan , R Varatharajan , R Jayavel , P Ramasamy , 2000, Fabrication and characterisation of (Ba,Sr)TiO3 thin films by sol–gel technique through organic precursor route, Materials Chemistry and Physics, Vol. vol 65, No. 3, pp. 261-265DOI