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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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Title Characteristics of PVD SiCN for Application in Hybrid Cu Bonding
Authors (Junyoung Choi) ; (Suin Jang) ; (Dongmyeong Lee) ; (Sukkyung Kang) ; (Sanha Kim) ; (Sarah Eunkyung Kim)
DOI https://doi.org/10.5573/JSTS.2025.25.1.102
Page pp.102-108
ISSN 1598-1657
Keywords SiCN; PVD; Hybrid Cu bonding; 3D packaging
Abstract To enhance the density and performance of semiconductor devices, 3D packaging with hybrid Cu bonding is emerging as a critical technology. One of the dielectrics used in hybrid Cu bonding is SiCN, typically deposited using PECVD (plasma-enhanced chemical vapor deposition). In this study, we investigated SiCN deposited at room temperature using PVD (physical vapor deposition). The SiCN, with a thickness of 150 nm, exhibited a surface roughness of 0.3-0.4 nm after the CMP (chemical mechanical polishing) process and a contact angle of about 10 degrees and dielectric constant of 3.9, indicating its potential as a dielectric for hybrid Cu bonding. And, PVD SiCN-SiCN bonding was performed at 260?C, resulting in a uniform and void-free interface.