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Title Design of Various Dipolar Source for Improvement of Electrostatic Discharge Protection Performance of 0.18 μm_30 V DDDNMOS Transistor for High Voltage Application
Authors (Yong-Jin Seo)
DOI https://doi.org/10.5573/JSTS.2024.24.3.249
Page pp.249-258
ISSN 1598-1657
Keywords Electrostatic discharge (ESD); double diffused drain n-type MOS (DDDNMOS); dipolar source; double snapback; channel blocking
Abstract The double diffused drain N-type MOS (DDDNMOS) transistor with a dipolar source is proposed to realize stable and robust electrostatic discharge (ESD) protection performance. The proposed dipolar source is a structure in which a P+ diffusion layer is intentionally inserted on the side of the N+ source to prevent lateral diffusion of the electron-rich region from the N+ source. According to the 2D simulation and measured TLP results, it was found that the inserted P+ diffusion layer effectively prevented the formation of deep electron channels caused by electron injection. Therefore, the double snapback phenomenon, which is a problem in the conventional DDDNMOS standard device, can be solved.