Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. 2023-12 (Vol.23 No.06)
  4. 10.5573/JSTS.2023.23.6.382
XML PDF INFO REF

References

1 
S. Cho, “Volatile and Nonvolatile Memory Devices for Neuromorphic and Processing-in-Memory Applications,” J. Semicond. Technol. Sci., vol. 22, no. 1, pp. 30-46, Feb. 2022.URL
2 
Z. Jiang, et al., “A Compact Model for Metal-Oxide Resistive Random Access Memory With Experiment Verification,” IEEE Trans. Electron Devices, vol. 63, no. 5, pp. 1884-1892, May 2016.DOI
3 
H. S. P. Wong, H. Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, “Metal-Oxide RRAM,” Proc. IEEE, vol. 100, no. 6, pp. 1951-1970, Jun. 2012.DOI
4 
J. Reuben, D. Fey, and C. Wenger, “A Modeling Methodology for Resistive RAM Based on Stanford-PKU Model With Extended Multilevel Capability,” IEEE Trans. Nanotechnol., vol. 18, no. 7, pp. 647-656, Jun. 2019.DOI
5 
H. Li, P. Huang, B. Gao, B. Chen, X. Liu, and J. Kang, “A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation,” IEEE Electron Device Lett., vol. 35, no. 2, pp. 211-213, Feb. 2014.DOI
6 
C. Sun, S. M. Lu, F. Jin, W. Q. Mo, J. L. Song, and K. F. Dong, “Control the switching mode of Pt/HfO$_{2}$/TiN RRAM devices by tuning the crystalline state of TiN electrode”, J. Alloys Compd., vol. 749, no. , pp. 481-486, Jun. 2018.DOI
7 
X. Guan, S. Yu, and H.-S. P. Wong, “A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations,” IEEE Electron Device Lett., vol. 33, no. 10, pp. 1405-1407, Oct. 2012.DOI
8 
C. La Torre, A. F. Zurhelle, T. Breuer, R. Waser, and S. Menzel, “Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices,” IEEE Trans. Electron Devices, vol. 66, no. 3, pp. 1268-1275, Mar. 2019.DOI
9 
T. Zanotti, P. Pavan, and F. M. Puglisi, “Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise,” Microelectron. Eng., vol. 266, pp. 111886-1-111886-10, Oct. 2022.DOI
10 
J. R. Minkel, “The Magic Ingredients in Intel’s New, Tinier Transistor,” Scientific American. Online available at https://www.scientificamerican.com/article/the-magic-ingredients-in/.URL
11 
D. Das, V. Gaddan, and S. Jeon, “Ferroelectricity in Al2O3/Hf0.5Zr0.5O2 Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature,” J. Semicond. Technol. Sci., vol. 21, no. 1, pp. 62-67, Feb. 2021.URL
12 
A. Padovani, L. Larcher, O. Pirrotta, L. Vandelli, and G. Bersuker, “Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching,” IEEE Trans. Electron Devices, vol. 62, no. 6, pp. 1998-2006, Jun. 2015.DOI
13 
C. La Torre, A. F. Zurhelle, T. Breuer, R. Waser, and S. Menzel, “Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices,” IEEE Trans. Electron Devices, vol. 66, no. 3, pp. 1268-1275, Mar. 2019.DOI
14 
J. Y. Lee, Y. Kim, M.-H. Kim, S. Go, S. W. Ryu, J. Y. Lee, T. J. Ha, S. G. Kim, S. Cho, and B.-G. Park, “Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling,” Vacuum, vol. 161, pp. 63-70, Mar. 2019.DOI
15 
M.-H. Kim, S. Kim, S. Bang, T.-H. Kim, D. K. Lee, S. Cho, and B.-G. Park, “Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current,” IEEE Trans. Nanotechnol., vol. 17, no. 4, pp. 824-827, Jul. 2018.DOI
16 
D. Ielmini, F. Nardi, and C. Cagli, “Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM,” IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3246-3253, Oct. 2021.DOI
17 
S. Yu, X. Guan X, H.-S. P. Wong, “Conduction mechanism of TiN/HfOx/Pt resistive switching memory: a trap-assisted-tunneling model.” Appl. Phys. Lett., vol. 99, no. 6, pp. 635071-1-635071-3, Aug. 2011.DOI
18 
L. Zhang. R. Huang, Y. Y. Hsu, F. T.Chen, H. Y. Lee, Y. S. Chen, W. S. Chen, P. Y. Gu, W. H. Liu, S. M. Wang, C. H. Tsai, M. J. Tsai, and P. S. Chen, “Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM,” Proc. International Reliability Physics Symposium (IRPS), pp. MY.8.1-MY.8.5, Apr. 2011.DOI
19 
J. Y. Lee, Y. H. Jung, J. Y. Lee, S. G. Kim, and S. Cho, “Optimization of pulse shape for suppressing current overshoot in ReRAM,” Proc. 2018 International Conference on Electronics, Information, and Communication (ICEIC), pp. 857-860, Honolulu, USA, Jan. 2018.URL