Mobile QR Code QR CODE


Yumneg Sun, Xiang Liu, et al, “Trap-Assisted Passing Word Line Leakage and Variable Retention Time in DRAM,” 2021 IEEE 4th International Conference on Electronics Technology(ICET), IEEE Journal of, June., 2021, doi: 10.1109/ICER51757.2021.9451059DOI
Xiaobin Yuan, Jae-Eun Park, et al, “Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology,” IEEE Transactions on Device and Materials Reliability, Vol. 8, No. 3, pp. 501-508, Sep., 2008, doi: 10.1109/TDMR.2008.2002350DOI
K. Y. Lim, X. Yu, et al, “A study on gate-induced junction breakdown,” 2001 6th International Conference on Solid-State and Interated Circuit Technologly. Proceedings, IEEE Journal of, Aug., 2002, doi: 10.1109/ICSICT.2001.982052DOI
G.Q. Lo, A. B Joshi, “Hot-carrier-stress effects on gate-induced drain leakage current in n-channel MOSFETs,” IEEE Electron Device Letters, Vol. 12, No. 1, pp. 5-7, Jan., 1991, doi: 10.1109/55.75679DOI
C. Chang, S. Haddad, et al, “Drain-avalanche and hole-trapping induced gate leakage in thin-oxide MOS device,” IEEE Electron Device Letters, Vol. 9, No. 11, pp. 588-590, Nov., 1988, doi: 10.1109/55.9285DOI
Thomas Yang, Xi-Wei Lin, “Trap-Assisted DRAM Row Hammer Effect,” IEEE Electron Device Letters, Vol. 40, No. 3, pp. 391-394, Jan., 2019, doi: 10.1109/LED.2019.2891260DOI
Mungyu Son, Hyunsun Park, “Making DRAM strong against row hammering,” 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC), IEEE journal of, Oct., 2017, doi: 10.1145/3061639.3062281DOI
Yinyi Lin, J.K. Wolf, “Combined ECC/RLL code,” IEEE Transactions on Magetics, Vol. 24, No. 5, pp. 2527-2529, Nov., 1998, doi: 10.1109/20.92163DOI
Sanghyuk Kwon, Young Hoon Son, et al, “Understanding DDR4 in pursuit of In-DRAM ECC,” 2014 International SoC Design Conference (ISOCC), IEEE Journal of, Apr., 2015, doi: 10.1109/ISOCC.2014.7087646DOI
T. Yamada, H. Kotani, et al, “A 4-Mbit DRAM with 16-bit concurrent ECC,” IEEE Journal of Solid-State Circuits, Vol. 23, No. 1, pp. 20-26, Feb., 1988, doi: 10.1109/4.251DOI