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### REFERENCES

1
Yu H.-C., Dec 2010, Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow, Applied Physics Express, Vol. 4, No. 1, pp. 012103
2
Kitatani T., Feb 2000, A 1.3-${\mathrm{\mu}}$m GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K, Japanese Journal of Applied Physics, Vol. 39, No. 2a, pp. 86-87
3
Kim T. W., Nov 2014, Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application, Journal of Crystal Growth, Vol. 405, No. 1, pp. 87-91
4
Turcotte S., Jun 2008, Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001), Journal of Applied Physics, Vol. 104, No. 8, pp. 083511
5
Sik J., Jan 2001, Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry, Journal of Applied Physics, Vol. 89, No. 1, pp. 294-305
6
Hassen F., Nov 2015, Optical characterization and carriers transfer between localized and delocalized states in Si-doped GaAsN/GaAs epilayer, Thin Solid Films, Vol. 594, No. 2, pp. 168-171
7
Giulotto E., May 2019, Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1${-}$xNx layers, Journal of Applied Physics, Vol. 125, No. 17, pp. 175701
8
Kent P. R. C., Zunger A., Aug 2001, Theory of electronic structure evolution in GaAsN and GaPN alloys, PHYSICAL REVIEW B, Vol. 64, No. 11, pp. 115208
9
Lindsay A., O’Reilly E. P., Nov 2004, Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys, PHYSICAL REVIEW LETTERS, Vol. 93, No. 18, pp. 196402
10
Wei S.-H., Zunger A., May 1994, Optical properties of zinc-blende semiconductor alloys: Effects of epitaxial strain and atomic ordering, PHYSICAL REVIEW B, Vol. 49, No. 20, pp. 14337-14351
11
Ozasa K., Mar 1990, Effect of misfit strain on physical properties of InGaP grown by metalorganic molecular‐beam epitaxy, Journal of Applied Physics, Vol. 68, No. 1, pp. 107-110
12
Egorov A. Yu., Jul 2005, Determination of strain-induced valence-band splitting in GaAsN thin films from circularly polarized photoluminescence, Journal of Applied Physics, Vol. 98, No. 1, pp. 013539
13
Liu H. F., May 2006, Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaAs$_{\mathrm{1-x}}$N$_{\mathrm{x}}$, Journal of Applied Physics, Vol. 99, No. 10, pp. 103503
14
Lin K. I., Mar 2006, Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering, Journal of Applied Physics, Vol. 99, No. 5, pp. 056103
15
Kang S., Feb 2020, Indium Composition Dependence of Raman Spectroscopy and Photocurrent of In$_{\mathrm{x}}$Ga$_{\mathrm{1{-}x}}$As Strained Layers Grown by Using MOCVD, Journal of the Korean Physical Society, Vol. 76, No. 3, pp. 231-236
16
Uesugi K., Mar 1999, Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements, Applied Physics Letters, Vol. 74, No. 9, pp. 1254-1256
17
Li W., Pessa M., Likonen J., May 2001, Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law, Applied Physics Letters, Vol. 78, No. 19, pp. 2864-2866
18
Klangtakai P., May 2015, Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy, Journal of Crystal Growth, Vol. 418, No. 15, pp. 145-152
19
Groenen J., Jun 1997, Tensile and compressive strain relief in $In_{x}$ $Ga_{1-x}$ As epilayers grown on InP probed by Raman scattering, Journal of Applied Physics, Vol. 82, No. 2, pp. 803-805
20
Hern andez S., Jun 2003, Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing, Journal of Applied Physics, Vol. 93, No. 11, pp. 9019-9023
21
Geddo M., Feb 2007, Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN, Applied Physics Letters, Vol. 90, No. 9, pp. 091907
22
Lautenschlager P., Mar 1987, Interband critical points of GaAs and their temperature dependence, PHYSICAL REVIEW B, Vol. 35, No. 17, pp. 9174-9189
23
Varshni Y. P., 1967, Temperature dependence of the energy gap in semiconductors, Physica, Vol. 34, No. 1, pp. 149-154