Mobile QR Code QR CODE

REFERENCES

1 
Kahn M. A., Q.Chen , Shur M. S., Mcdermott B. T., July 1996, Microwave operation of GaN/AlGaN-doped channel hetro-structure field effect transistors, IEEE Electron. Device Lett., Vol. 17, pp. 325-327DOI
2 
Wu Y. F., Kapolnek D., Ibbetson J. P., Parikh P., Keller B. P., Mishra U. K., 2001, Very-high power density AlGaN/GaN HEMTs, IEEE Trans. Electron. Device, pp. 586-590DOI
3 
Wu Y. F., Keller B. P., Keller S., Kapolnek D., Kozodoy P., DenBaars S. P., Mishra U. K., 1996, Very high breakdown voltage and large transcon-ductance realized on GaN heterojunction field effect transistors, Appl. Phys. Lett., Vol. 69, pp. 1438DOI
4 
Binari S., Ikossi K., Roussos J. A., Kruppa W., Park D., Dietrich H. B., Koleske D. D., Wickenden A. E., Henry R. L., 2001, Trapping effects and microwave power performance in AlGaN/GaN HEMTs, IEEE Trans. Electron. Device, Vol. 48, pp. 465-471DOI
5 
Vetury R., Zhang N. Q., Keller S., Mishra U. K., 2001, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Trans. Electron. Device, Vol. 48, pp. 560-566DOI
6 
Tarakji A., Simin G., Ilinskaya N., Hu X., A , Kumar , Koudymov A., Yang J., Khan M. A., 2001, Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors, Appl. Phys. Lett., Vol. 78, pp. 2169DOI
7 
Shijima K., Shigekawa N., 2004, Thermal Stability of Electrical Properties in AlGaN/GaN Hetero-structures., Jpn. J. Appl. Phys., Vol. 43, No. 1, pp. 100-105Google Search
8 
Edwards A.P., Mittereder J. A., Binari S. C., Katzer D. S., Storm D. F., Roussos J. A., Apr 2005, Improved reliability of AlGaN/GaN HEMTs using and NH3 plasma treatment prior to SiN passivation, IEEE Electron Device Lett., Vol. 26, No. 4, pp. 225-227DOI
9 
Guhel Y., Boudart B., Vellas N., Gaquiere C., Delos E., Ducatteau D., Bougrioua Z., Germain M., Oct 2005, Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps., Solid State Electron., Vol. 49, No. 10, pp. 1589-1594DOI
10 
Meyer D. J., Flemish J. R., Redwing J. M., may 14/15, 2007, Plasma surface pretreatment effects on Silicon nitride passivation of AlGaN/GaN HEMTs, in Proc. CS MANTECH Conf., pp. 305-307Google Search