Mobile QR Code QR CODE


Fujihira T., Miyasaka Y., 1998 [, Simulated superior performances of semiconductor superjunction devices, Proc. 10th Int. Symp. Power Semicond. Devices ICs. ISPSD’98 (IEEE Cat. No.98CH36212), No. V, pp. 423-426DOI
Ji S., Zhang Z., Wang F., 2017, Overview of high voltage sic power semiconductor devices: development and application, CES Trans. Electr. Mach. Syst., Vol. 1, No. 3, pp. 254-264DOI
Do K.I., Lee B.S., Koo Y.S., 2018, Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications, IEEE Electron Device Letters, Vol. 40, No. 2, pp. 283-286DOI
Merkert A., Krone T., Mertens A., 2013, Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices, IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2238-2245DOI
She X., Huang A. Q., Lucia O., Ozpineci B., 2017, Review of Silicon Carbide Power Devices and Their Applications, IEEE Trans. Industrial Electronics, Vol. 64, No. 10, pp. 8193-8205DOI
Kargarrazi S., Lanni L., Rusu A., Zetterling C.-M., 2015, A monolithic SiC drive circuit for SiC Power BJTs, in Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Vol. 2015-June, pp. 285-288DOI
Ericson N., Frank S., Britton C., Marlino L., Ryu S. H., Grider D., Mantooth A., Francis M., Lamichhane R., Mudholkar M., Shepherd P., Glover M., Valle-Mayorga J., McNutt T., Barkley A., Whitaker B., Cole Z., Passmore B., Lostetter A., 2014, A 4H silicon carbide gate buffer for integrated power systems, IEEE Transactions on Power Electronics, Vol. 29, No. 2, pp. 539-542DOI
Lamichhane R. R., Ericsson N., Frank S., Britton C., Marlino L., Mantooth A., Francis M., Shepherd P., Glover M., Perez S., McNutt T., Whitaker B., Cole Z., 2014, A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 414-417DOI
Crisafulli Vittorio, 2017, High Efficiency and ruggedness intelligent IGBT technology for EV/HEV, PCIM Europe 2017, Nuremberg, GermanyGoogle Search
Do K.I., Lee B.S., 2019, LIGBT-based ESD Protection Device with High Holding Voltage for 15 V Power IC Applications, Journal of Semiconductor Technology and Science, Vol. 19, No. 5, pp. 470-476DOI
Cooper Jr. J. A., Agarwal A., 2002, SiC powerswitching devices-the second electronics revolution?, Proc. IEEE, Vol. 90, No. 6, pp. 956968DOI
Spitz J., Melloch M. R., Cooper J. A., Capano M. A., 1998, 2.6Kv 4H-SiC lateral DMOSFETs, IEEE Electron Device Lett., Vol. 19, No. 4, pp. 100102DOI
Huang C., Kuo J., Tsai C., 2008, High voltage (3130 V) 4H-SiC lateral p-n diodes on a semiinsulating substrate, IEEE Electron Device Lett., Vol. 29, No. 1, pp. 83-85DOI
Lee W., Chu K., Huang C., Lee L., Tasi M., Lee K., Zhao F., 2012, Design and fabrication of 4H-SiC lateral high-voltage devices on a semi-insulating substrate, IEEE Transaction on Electron Devices, Vol. 59, No. 3, pp. 754-760DOI
Khanna Khanna, (2003, Aug), IGBT Theory and design. (1st ed.)Google Search