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Title Review of Short-circuit Protection Circuits for SiC MOSFETs
Authors (Seungjik Lee) ; (Ockgoo Lee) ; (Ilku Nam)
DOI https://doi.org/10.5573/JSTS.2023.23.2.128
Page pp.128-137
ISSN 1598-1657
Keywords SiC MOSFETs; short-circuit protection; short-circuit detection; soft termination circuit; soft turn off
Abstract Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are commonly used in the power transistor industry owing to their superior conductivity, low switching loss, high-frequency operation, and desirable thermal characteristics. However, the short-circuit withstand time of SiC MOSFETs is shorter than that of Si devices, which is disadvantageous in fault states. Gate drivers for SiC MOSFETs require short-circuit protection and soft termination circuits to detect short circuits and protect the power devices and systems from a short-circuit state. Thus, short-circuit protection circuits for SiC MOSFETs are reviewed in this paper. Accordingly, short-circuit detection circuits classified according to gate-source voltage (VGS), drain-source voltage (VDS), and drain-source current (IDS) detection methods are discussed. Moreover, the merits and demerits of soft termination circuits are reviewed.