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Title [LETTER] Barometric Pressure Sensor with Air Pocket Integrated with MOSFETs on the Same Substrate
Authors (Dongkyu Jang) ; (Gyuweon Jung) ; (Yujeong Jeong) ; (Seongbin Hong) ; (Jong-Ho Lee)
DOI https://doi.org/10.5573/JSTS.2020.20.3.305
Page pp.305-310
ISSN 1598-1657
Keywords Cavity; barometric pressure sensor; integration with MOSFETs; CMOS compatible process technology
Abstract In this paper, we propose a process to efficiently integrate barometric pressure sensors and MOSFETs on the same chip and show the measured results from these devices. The barometric sensor and MOSFETs are fabricated on the same Silicon substrate using CMOS process technology. The main process steps for the fabrication of the barometric sensor and MOSFETs are explained. Air pockets are connected around the barometric sensor and improve the sensitivity of the barometric sensor. The barometric sensor has a 0.5 μm thin diaphragm, which can reduce the size of the barometric sensor. The operating characteristics of the barometric sensor and the MOSFETs fabricated on the same substrate are verified.