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Authors Dongmin Kim;Donggu Im;In-Young Lee
Page pp.498-504
ISSN 1598-1657
Keywords CMOS; negative resistance; on-chip spiral inductor; passive element; PTAT current source; PVT; quality factor; singled-ended
Abstract A RF process, voltage and temperature (PVT) compensated negative resistance (NR) circuit is proposed to improve the quality factor (Q-factor) of CMOS passive devices while ensuring stability over PVT variations. It is implemented in the form of a grounded NR circuit to support single-ended RF circuit applications. Various circuit techniques such as a diode-connected load, a proportional-to-absolute-temperature (PTAT) current source and an adaptive body-biasing based threshold voltage compensation have been adopted to obtain a stable negative resistance value. Simulation results show that the Q-factor of on-chip spiral inductors loaded by the proposed NR circuit is improved from 6 to 60 at 1 GHz under typical corner conditions (tt, 1.2V, 27 ℃). The simulated Q-factor variation in corner conditions is approximately 37, which is approximately 6.5 times more stable than conventional NR circuit without compensation.