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Title Investigation and Optimization of Double-gate MPI 1T DRAM with Gate-induced Drain Leakage Operation
Authors 하종민(Jongmin Ha) ; 이재윤(Jae Yoon Lee) ; 김명선(Myeongseon Kim) ; 조성재(Seongjae Cho) ; 최일환(Il Hwan Cho)
Page pp.165-171
ISSN 1598-1657
Keywords 1T DRAM ; middle partial insulation ; gate-induced drain leakage (GIDL) ; TCAD
Abstract In this paper, we propose a double-gate one-transistor dynamic random-access memory (1T DRAM) with middle partial insulation (MPI) structure for low power application. Low power operation with the gate-induced drain leakage (GIDL) programming method can be obtained while maintaining the original advantages of MPI 1TDRAM. The optimization of the MPI 1T-DRAM device for the GIDL method is investigated with technology computer-aided design (TCAD). High current ratio and low power consumption are obtained from the proposed 1T-DRAM device. Optimal device design in terms of barrier insulator length and fin width have been carried out for improvements of device performances and reliability.