Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. JSTS 2019-02(Vol.19 No.01)
XML PDF INFO REF
Title Strain Effectiveness of Gate-all-around Silicon Transistors with Various Surface Orientations and Cross-sections
Authors Kihwan Kim(Kihwan Kim) ; Saeroonter Oh(Saeroonter Oh)
DOI https://doi.org/10.5573/JSTS.2019.19.1.024
Page pp.24-29
ISSN 1598-1657
Keywords Gate-all-around ; nanosheet ; straineffectiveness ; sub-7 nm CMOS
Abstract We investigate the effect of strain on the device characteristics of gate-all-around (GAA) NMOS with various configurations, including crystal orientation, cross-sectional shape, and strain conditions, via device simulation. After verifying the strain dependence of mobility of various surface orientations with the literature, we apply the strain transport model to GAA MOSFETs which have different sidewall orientations depending on the channel direction. Drive current enhancement is the largest for the (001)/<110> case under large uniaxial tensile strain values exceeding 1%. In addition, we found that cross-sectional width of the nanosheet is a key parameter in maximizing the drive current for a given footprint. Optimization of device and strain configuration of single-stacked GAA devices is necessary to meet device performance specifications for sub-7nm technology.