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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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Title Fabrication Methods for Nanowire Tunnel FET with Locally Concentrated Silicon-germanium Channel
Authors Junil Lee(Junil Lee) ; Ryoongbin Lee(Ryoongbin Lee) ; Sihyun Kim(Sihyun Kim) ; Euyhwan Park(Euyhwan Park) ; Hyun-Min Kim(Hyun-Min Kim) ; Kitae Lee(Kitae Lee) ; Sangwan Kim(Sangwan Kim) ; Byung-Gook Park(Byung-Gook Park)
DOI https://doi.org/10.5573/JSTS.2019.19.1.018
Page pp.18-23
ISSN 1598-1657
Keywords TFET ; SiGe channel TFET ; Ge condensation ; nanowire channel
Abstract This paper proposes a method to fabricate tunnel field-effect transistors (TFETs) which have Silicon Germanium (SiGe) nanowire channel with graded Ge concentration on Silicon-on-insulator (SOI). To obtain the concentration-graded SiGe channel, Ge condensation method which is a kind of oxidation is adopted. The rectangular shape of the channel becomes a rounded nanowire through the Ge condensation process. The TFET with the concentration-graded SiGe channel can improve drive current due to a smaller band gap at the Gecondensed surface of the channel compared to Si or non-condensed SiGe channel TFETs. The electrical characteristics of the proposed TFET are verified by technology computer-aided design (TCAD) simulation.