JSTS - Journal of Semiconductor Technology and Science

1

Y. Li, J. L. F. Zhang, C. Tian, X. Wang, S. Wei, G. Zhang, and W. Yang, “First demonstration of CuCrO2/β-Ga2O3 p-n heterojunction diode with high breakdown voltage and low leakage current”, IEEE Transactions on Electron Devices, vol. 72, pp. 4005-4010, 2025.

2

J. S. Li, C. C. Chiang, H. H. Wan, T. J. Yoo, F. Ren, H. Kim, and S. J. Pearton, “Breakdown up to 13.5 kV in NiO/β-Ga2O3 vertical heterojunction rectifiers”, ECS Journal of Solid State Science and Technology, vol. 13, 2024.

3

S. J. Pearton, J. C. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices”, Applied Physics Reviews, vol. 5, 2018.

4

J. Y. Zhang, J. L. Shi, D. C. Qi, L. Chen, and K. H. L. Zhang, “Recent progress on the electronic structure, defect, and doping properties of Ga2O3”, APL Materials, vol. 8, 2020.

5

W. Li, K. Nomoto, Z. Hu, D. Jena, and H. G. Xing, “Field-plated Ga2O3 trench Schottky barrier diodes with a BV2/Ron,sp of up to 0.95 GW/cm2”, IEEE Electron Device Letters, vol. 41, pp. 107-110, 2020.

6

Z. Hu, H. Zhou, Q. Feng, J. Zhang, C. Zhang, K. Dang, Y. Cai, Z. Feng, Y. Gao, X. Kang, and Y. Hao, “Field-plated lateral β-Ga2O3 Schottky barrier diode with high reverse blocking voltage of more than 3 kV and high DC power figure-of-merit of 500 MW/cm2”, IEEE Electron Device Letters, vol. 39, pp. 1564-1567, 2018.

7

H. Zhou, Q. Yan, J. Zhang, Y. Lv, Z. Liu, Y. Zhang, K. Dang, P. Dong, Z. Feng, Q. Feng, J. Ning, C. Zhang, P. Ma, and Y. Hao, “High-performance vertical β-Ga2O3 Schottky barrier diode with implanted edge termination”, IEEE Electron Device Letters, vol. 40, pp. 1788-1791, 2019.

8

Y. Zhang, J. Zhang, Z. Feng, Z. Hu, J. Chen, K. Dang, Q. Yan, P. Dong, H. Zhou, and Y. Hao, “Impact of implanted edge termination on vertical β-Ga2O3 Schottky barrier diodes under OFF-state stressing”, IEEE Transactions on Electron Devices, vol. 67, pp. 3948-3953, 2020.

9

W. Li, Z. Hu, K. Nomoto, and Z. Zhang, “1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2”, Applied Physics Letters, vol. 113, 2018.

10

B. Li, Y. Wang, Z. Luo, W. Xu, H. Gong, T. You, X. Ou, J. Ye, Y. Hao, and G. Han, “Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices”, Fundamental Research, vol. 5, pp. 804-817, 2025.

11

X. L. Liu, J. Huang, Q. M. Wei, and L. Ye, “Potential design strategy of wide-bandgap semiconductor p-type β-Ga2O3”, Semiconductor Science and Technology, vol. 39, 2024.

12

J. L. Lyons, “A survey of acceptor dopants for β-Ga2O3”, Semiconductor Science and Technology, vol. 33, 2018.

13

S. J. Pearton, F. Ren, A. Y. Polyakov, A. Haque, M. Labed, and Y. S. Rim, “Status of Ga2O3 for power device and UV photodetector applications”, Applied Physics Reviews, vol. 12, 2025.

14

W. Hao, Q. He, X. Zhou, X. Zhao, G. Xu, and S. Long, “2.6-kV NiO/Ga2O3 heterojunction diode with superior high-temperature voltage blocking capability”, Proc. of 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vancouver, BC, Canada, pp. 105-108, 2022.

15

Q. Yan, H. Gong, J. Zhang, J. Ye, H. Zhou, Z. Liu, S. Xu, C. Wang, Z. Hu, Q. Feng, J. Ning, C. Zhang, P. Ma, R. Zhang, and Y. Hao, “β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2”, Applied Physics Letters, vol. 118, 2021.

16

C. Wang, H. Zhou, J. Zhang, W. Mu, J. Wei, Z. Jia, X. Zheng, X. Luo, X. Tao, and Y. Hao, “Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron,sp of 0.74/0.28 GW/cm2”, Applied Physics Letters, vol. 120, 2022.

17

X. Zhou, Q. Liu, W. Hao, G. Xu, and S. Long, “Normally-off β-Ga2O3 power heterojunction field effect-transistor realized by p-NiO and recessed gate”, Proc. of 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vancouver, BC, Canada, pp. 101-104, 2022.

18

X. Zhou, Q. Liu, W. Hao, G. Xu, and S. Long, “Normally-off β-Ga2O3 power heterojunction field-effect-transistor realized by p-NiO and recessed-gate”, Proc. of 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vancouver, BC, Canada, pp. 101-104, 2022.

19

Y. Wang, H. Gong, X. Jia, J. Ye, Y. Liu, H. Hu, X. Ou, X. Ma, R. Zhang, Y. Hao, and G. Han, “Demonstration of β-Ga2O3 superjunction-equivalent MOSFETs”, IEEE Transactions on Electron Devices, vol. 69, pp. 2203-2209, 2022.

20

S. Ghosh, M. Baral, J. Bhattacharjee, R. Kamparath, S. D. Singh, and T. Ganguli, “Evaluation of valence band offset and its non-commutativity at all oxide α-Cr2O3/β-Ga2O3 heterojunction from photoelectron spectroscopy”, Applied Physics Letters, vol. 130, 2021.

21

S. Ghosh, M. Baral, R. Kamparath, R. J. Choudhary, D. M. Phase, S. D. Singh, and T. Ganguli, “Epitaxial growth and interface band alignment studies of all oxide α-Cr2O3/β-Ga2O3 p-n heterojunction”, Applied Physics Letters, vol. 115, 2019.

22

P. Schlupp, D. Splith, H. von Wenckstern, and M. Grundmann, “Electrical properties of vertical p-NiO/n-Ga2O3 and p-ZnCo2O4/n-Ga2O3 pn-heterodiodes”, Physica Status Solidi A, vol. 216, 2019.

23

H. Gong, F. Zhou, W. Xu, X. Yu, Y. Xu, Y. Yang, F.-F. Ren, S. Gu, Y. Zheng, R. Zhang, and H. Lu, “1.37 kV/12 A NiO/β-Ga2O3 heterojunction diode with nanosecond reverse recovery and rugged surge-current capability”, IEEE Transactions on Power Electronics, vol. 36, pp. 12213-12217, 2021.

24

Y. Xiao, X. Li, H. Gong, W. Liu, X. Wu, S. Ding, H. Lu, and J. Ye, “Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current”, Applied Surface Science, vol. 578, 2022.

25

W. Hao, Q. He, K. Zhou, G. Xu, W. Xiong, X. Zhou, G. Jian, C. Chen, X. Zhao, and S. Long, “Low defect density and small curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2”, Applied Physics Letters, vol. 118, 2021.

26

K. Tetzner, K. Egbo, M. Klupsch, R. S. Unger, A. Popp, T. S. Chou, S. B. Anooz, Z. Galazka, A. Trampert, O. Bierwagen, and J. Wurfl, “SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes”, Applied Physics Letters, vol. 120, 2022.

27

M. Budde, D. Splith, P. Mazzolini, A. Tahraoui, J. Feldl, M. Ramsteiner, H. von Wenckstern, M. Grundmann, and O. Bierwagen, “SnO/β-Ga2O3 vertical pn heterojunction diodes”, Applied Physics Letters, vol. 117, 2020.

28

T. Watahiki, Y. Yuda, A. Furukawa, M. Yamamuka, Y. Takiguchi, and S. Miyajima, “Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage”, Applied Physics Letters, vol. 111, 2017.

29

Y. Kokubun, S. Kubo, and S. Nakagomi, “All-oxide p-n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3”, Applied Physics Express, vol. 9, 2016.

30

D. O. Scanlon, B. J. Morgan, G. W. Watson, and A. Walsh, “Acceptor levels in p-type Cu2O: Rationalizing theory and experiment”, Physical Review Letters, vol. 103, 2009.

31

A. Mittiga, F. Biccari, and C. Malerba, “Intrinsic defects and metastability effects in Cu2O”, Thin Solid Films, vol. 517, pp. 2469-2472, 2009.

32

X. Wang, M. Li, Y. Jiang, K. Y. Wen, C. Y. Tang, F. Z. Du, C.-Z. Chen, C. K. Deng, Y. Zhang, H. H. Lu, Y. F. Cui, Q. Wang, and H. Y. Yu, “2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure”, Journal of Alloys and Compounds, vol. 1036, 2025.

33

Y. Jia, S. Sato, A. Traore, R. Morita, E. Broccoli, F. F. Florena, M. M. Islam, H. Okumura, and T. Sakurai, “Electrical properties of vertical Cu2O/β-Ga2O3 (001) p-n diodes”, AIP Advances, vol. 13, 2023.

34

A. Takatsuka, H. Miyamoto, K. Sasaki, and A. Kuramata, “Fabrication of ampere-class p-Cu2O/n-β-Ga2O3 trench heterojunction barrier Schottky diodes and double-pulse evaluation”, Proc. of 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Hong Kong, pp. 342-345, 2023.

35

J. Jiang, S. Wu, P. Liu, and Y. Tian, “Microstructure evolution and electrical behaviors for high-performance Cu2O/Zr-doped β-Ga2O3 heterojunction diodes”, ACS Applied Materials & Interfaces, vol. 16, pp. 40170-40179, 2024.

36

J. Park, K.-S. Park, J.-I. Won, K.-H. Kim, S. Koo, S.-G. Kim, and J.-K. Mun, “Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode”, Applied Physics Letters, vol. 110, no. 14, 2017.

37

S. M. S. H. Rafin, R. Ahmed, M. A. Haque, M. K. Hossain, M. A. Haque, and O. A. Mohammed, “Power electronics revolutionized: A comprehensive analysis of emerging wide and ultrawide bandgap devices”, Micromachines, vol. 14, 2023.

38

H.-K. Lee, V. Janardhanam, J.-K. Mun, T.-H. Jang, K.-H. Shim, H. J. Yun, J. Won, and C.-J. Choi, “Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates”, Materials Science in Semiconductor Processing, vol. 191, 2025.

39

X. Wang, M. Li, M. He, K. Wen, H. Lu, C.-Z. Chen, Y. Jiang, F. Du, Y. Zhang, C. Deng, Z. Xiong, H. Yu, Q. Wang, and H. Yu, “Optimization of CuOx/Ga2O3 heterojunction diodes for high-voltage power electronics”, Nanomaterials, vol. 15, 2025.

40

C. C. Chiang, J. S. Li, H. H. Wan, F. Ren, and S. J. Pearton, “The optimization of NiO doping, thickness, and extension in kV-class NiO/Ga2O3 vertical rectifiers”, Crystals, vol. 13, 2023.

41

H. Zhou, S. Zeng, J. Zhang, Z. Liu, Q. Feng, S. Xu, J. Zhang, and Y. Hao, “Comprehensive study and optimization of implementing p-NiO in β-Ga2O3 based diodes via TCAD simulation”, Crystals, vol. 11, 2021.

42

W. C. Ho, Y. H. Liu, W. H. Wu, S. W. Huang Chen, J. Tzou, H. C. Kuo, and C. W. Sun, “The study of high breakdown voltage vertical GaN-on-GaN pin diode with modified mesa structure”, Crystals, vol. 10, 2020.

43

J. S. Li, H. H. Wan, C. C. Chiang, X. Xia, T. J. Yoo, H. Kim, F. Ren, and S. J. Pearton, “Reproducible NiO/Ga2O3 vertical rectifiers with breakdown voltage >8 kV”, Crystals, vol. 13, 2023.

44

A. Sandupatla, S. Arulkumaran, G. I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda, and H. Amano, “GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates”, AIP Advances, vol. 9, 2019.

45

N. Serra, G. Giacomini, A. Piazza, C. Piemonte, A. Tarolli, and N. Zorzi, “Experimental and TCAD study of breakdown voltage temperature behavior in n+/p SiPMs”, IEEE Transactions on Nuclear Science, vol. 58, pp. 1233-1240, 2011.

46

B. Setera, and A. Christou, “Threading dislocations in GaN high-voltage switches”, Microelectronics Reliability, vol. 124, 2021.

47

H.-C. Kim, V. Janardhanam, S. Pokhrel, and C.-J. Choi, “Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 Schottky barrier diode”, Journal of Crystal Growth, vol. 649, 2025.

48

M. K. Hudait, and S. B. Krupanidhi, “Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes”, Solid-State Electronics, vol. 43, pp. 2135-2139, 1999.

49

T. Munir, A. A. Aziz, and M. J. Abdullah, “Epilayer thickness and doping density variation effects on current-voltage (I-V) characteristics of n-GaN Schottky diode”, Proc. of 2006 IEEE International Conference on Semiconductor Electronics. Kuala Lumpur, Malaysia, pp. 892-895, 2006.

50

H. Zhou, S. Zeng, J. Zhang, Z. Liu, Q. Feng, S. Xu, J. Zhang, and Y. Hao, “Comprehensive study and optimization of implementing p-NiO in β-Ga2O3 based diodes via TCAD simulation”, Crystals, vol. 11, 2021.

JSTS
Journal of Semiconductor Technology and Science

Journal Search

Journal XML

REFERENCES

JSTSJournal of Semiconductor Technology and Science

Journal Search

Journal XML

REFERENCES

JSTS
Journal of Semiconductor Technology and Science