| Title |
Study and Optimization of the p-type Cu2O/β-Ga2O3 P-N Heterojunction Power Diode via TCAD Simulation |
| Authors |
(Hyeon Cheol Kim) ; (Sameer Pokhrel) ; (V. Janardhanam) ; (Chel-Jong Choi) ; (Kyu Hwan Shim) |
| DOI |
https://doi.org/10.5573/JSTS.2026.26.5.340 |
| Keywords |
Ga2O3; Cu2O; heterojunction; PN diodes; breakdown voltage |
| Abstract |
We have systematically investigated the effect of the variation in the doping concentration and thickness of the Cu2O layer on the electrical characteristics of the p-type Cu2O/n-type Ga2O3 heterojunction p-n diode. In particular, the effect of the doping concentration and thickness of Cu2O was explored in order to enhance the breakdown voltage of the p-type Cu2O/n-type Ga2O3 heterojunction p-n diode. The on-resistance of the device was noted to decrease from 41.2 MΩ·cm2 to 0.815 mΩ·cm2 with increasing electron affinity of the Cu2O layer.
The breakdown voltage of the device increased with increasing doping concentration and increase in thickness of the Cu2O layer until the respective values reached to 1 × 1018 cm?3 and 200 nm with the breakdown voltage of the p-n diode reaching 1500 V. The increase in breakdown voltage of the p-n diode with thickness of Cu2O layer is attributed to the fact that a thicker layer could accommodate a wider depletion region. While the increase in breakdown voltage with doping concentration of p-type Cu2O is due to widening of the depletion width in the drift layer. An electric field distribution under the anode edges for the p-type Cu2O/n-type Ga2O3 heterojunction p-n diode has been presented and discussed in detail through technology computer aided design (TCAD) simulation.
The results of this work provide a vital insight for the design and performance enhancement of the next-generation Ga2O3-based high-power devices. |