| Title |
Enhanced HMDSO Resistance in CeO2-rGO/Pd/ZnO Gas Sensor |
| Authors |
(Soyhan) ; (Jeong Min Baik) ; (Yunsik Lee) |
| DOI |
https://doi.org/10.5573/JSTS.2025.25.5.509 |
| Keywords |
Anti-poisoning sensors; Pd/ZnO; CeO2-rGO; HMDSO; Anti-poisoning mechanism |
| Abstract |
Hexamethyldisiloxane (HMDSO) presents a significant challenge to the reliability of metal-oxidesemiconductor (MOS) gas sensors due to its deactivation properties, posing risks to environmental and daily life safety. This study enhances the performance of MOS gas sensors by developing an anti-poisoning sensor (APS) with a composite CeO2-rGO (Cerium Oxide-reduced Graphene Oxide) layer on Pd/ZnO nanoparticles. The APS improves resistance to HMDSO poisoning during hydrogen (H2) detection and extends the sensors’ lifespan. Previous work was referenced for this study, and experimental sensing results demonstrate that the APS sensor shows a notable 1.25% change in resistance/conductivity when exposed to air and HMDSO (10 ppm) at 250?C, surpassing both Pd/ZnO and ZnO sensors. Surface modifications with CeO2-rGO effectively mitigate HMDSO-induced deactivation mechanisms, inhibiting the formation of organosilicon compounds, silicates, and a SiO2 layer on metal/metal-oxide surfaces that typically reduce sensor sensitivity over time. CeO2 supplies oxygen, influencing surface chemical reactions, while rGO acts as a barrier preventing HMDSO infiltration, thereby protecting the sensing layer’s integrity.
The aim of these APS a material system is to enhance the lifespan and reliability of electrochemical sensors (ECS) for future applications in the detecting of food spoilage gases in refrigerator environments. |