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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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Title Performance Enhancement of THz Detector Based on Trantenna with Shallow Trench Isolation in 28-nm CMOS Technology
Authors (Yoo Bin Song) ; (Min Woo Ryu) ; (E-San Jang) ; (Kyung Rok Kim)
DOI https://doi.org/10.5573/JSTS.2025.25.5.496
Page pp.496-501
ISSN 1598-1657
Keywords CMOS; asymmetric FET; plasmonic terahertz (THz) detector; responsivity; monolithic trantenna
Abstract We report a high-performance plasmonic terahertz (THz) detector based on a monolithic transistorantenna (Trantenna) structure by using the 28-nm CMOS foundry technology. By designing an ultimate asymmetric field-effect transistor (FET) on a confined channel structure with shallow trench isolation (STI) technology, enhanced channel charge asymmetry between the source and drain has been obtained compared to the non-confined channel structure with limitations of asymmetric boundary condition intensification. In addition, we experimentally demonstrate a 2.25-fold performance enhancement over the non-confined channel plasmonic THz detector at 0.1 THz.