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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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Title Biased Poly-gate-separated Schottky Barrier Diode in CMOS
Authors (Deokgi Kim) ; (Jaehyun Noh) ; (Wooyeol Choi) ; (Dongha Shim)
DOI https://doi.org/10.5573/JSTS.2025.25.4.414
Page pp.414-419
ISSN 1598-1657
Keywords Schottky barrier diode; biased poly-gate-separated; CMOS
Abstract This paper presents a biased poly-gate-separated Schottky barrier diode (biased PGS-SBD). The polygate of PGS-SBD is biased to improve DC (leakage current) or RF performance (cut-off frequency). The operation principles are analyzed using TCAD simulations. The device is fabricated in a 130-nm CMOS process without any process modification. The DC and RF performances are measured and analyzed. The leakage current is reduced from 2.4 × 10?5 to 2.1 × 10?6 mA/μm2 as the poly-gate voltage decreases from +1.0 V to ?1.0 V at the diode voltage of ?1 V. The cut-off frequency increases from 0.75 to 1.25 THz as the gate voltage increases from ?1.0 V to +1.0 V. The proposed device achieved ∼5X lower leakage current or 34% higher cut-off frequency than that of the floating-gate PGS-SBD by controlling the poly-gate voltage.