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  3. JSTS 2023-06(Vol.23 No.03)
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Title Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory
Authors (Ho-Nam Yoo) ; (Yeongheon Yang) ; (Min-Kyu Park) ; (Woo Young Choi) ; (Jong-Ho Lee)
DOI https://doi.org/10.5573/JSTS.2023.23.3.196
Page pp.196-201
ISSN 1598-1657
Keywords Vertical NAND flash memory; erase operation; gate-induced drain leakage (GIDL)
Abstract The erase characteristics of VNAND flash memory cells depending on gate-induced drain leakage (GIDL) conditions are analyzed through device simulation. It is revealed that the measurement and simulation results show similar trends for the Vth change after the erase operation depending on the GIDL condition. The channel potential and the amount of GIDL generation during the erase operation are investigated in terms of Vth change. An erase operation with GIDL has a 10 times larger Vth change than an erase operation without GIDL. In addition, the operation of reducing only the Vth of the selected cell in VNAND flash memory is verified by adjusting GIDL conditions.