Mobile QR Code QR CODE

The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

Journal Search

  1. Home
  2. Archive
  3. 2026-10 (Vol.26 No.05)
  4. 10.5573/JSTS.2026.26.5.313
XML PDF INFO REF

REFERENCES

1 
H. Hamza, and A. Jarndal, “Modeling and Simulation of AlPN/GaN High Electron Mobility Transistor”, Advanced Theory and Simulations, vol. 8, no. 4, p. 2401115, 2025.DOI
2 
H. Qin, J. Peng, and Z. Zhang, “Junction temperature prediction method of GaN HEMT power devices based on accurate on - voltage testing”, Energy Reports, vol. 9, pp. 389-395, 2023.DOI
3 
M. B. Yaseen, F. Wan, and F. Siddique, “GaN radiofrequency components and power amplifiers for next-generation 5G communications”, Microelectronic Engineering, vol. 297, 2024.DOI
4 
A. Shukla, and K. P. Ray, “Design and Development of GaN-Based Power Amplifier for Radar Applications”, IETE Technical Review, vol. 41, no. 5, pp. 557-577, 2024.DOI
5 
J. Ajayan, and S. Sreejith, “AlGaN/GaN High electron mobility Transistor (HEMT) based radio frequency power amplifiers for future wireless communication transmitters: Exciting prospects and challenges”, Microelectronic Engineering, vol. 299, 2025.DOI
6 
S. R. Jeon, S. H. Lee, and J. Park, “Experimental and Simulation Study on the Electrical Characteristics of Proton-irradiated AlGaN/GaN HEMT”, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 25, no. 1, pp. 21-29, 2025.DOI
7 
P. Dai, S. Wang, and H. Lu, “Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors”, Micromachines, vol. 15, no. 3, p. 321, 2024.DOI
8 
M. Zhang, H. Wang, L. Yang, B. Hou, M. Wu, and Q. Zhu, “The dual-mode integration of power amplifier and radio frequency switch based on GaN dual-gate HEMTs”, IEEE Journal of the Electron Devices Society, vol. 12, pp. 39-45, 2023.DOI
9 
M. Wang, P. Gao, and F. Shi, “Advanced Packaging Technology of GaN HEMTs Module for High-power and High-frequency Applications: A Review”, IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 14, no. 9, pp. 1537-1550, 2024.DOI
10 
J. Bai, A. Zhang, and J. Cheng, “An improved small-signal model for GaN HEMTs devices”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 37, no. 3, p. e3237, 2024.DOI
11 
Y. Liu, J. Cao, and X. Li, “Switching Loss Model for Fast-Switching GaN HEMT in Half-Bridge Circuit Considering Parasitic Inductance and Temperature Effect”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 71, no. 12, pp. 6128-6137, 2024.DOI
12 
J. Zhang, H. Cai, and S. Wang, “A novel intrinsic-parameters-correlation enhancement technology applied to accurately extract GaN HEMT small-signal model parameters”, Integration, vol. 103, 2025.DOI
13 
H. Shen, W. Zhou, J. Wang, H. Jin, Y. Wu, J. Wang, and J. Liu, “A Novel ANN-PSO Method for Optimizing a Small-Signal Equivalent Model of a Dual-Field-Plate GaN HEMT”, Micromachines, vol. 15, no. 12, p. 1437, 2024.DOI
14 
X. Yao, “A new simulated annealing algorithm”, International Journal of Computer Mathematics, vol. 56, no. 3-4, pp. 161-168, 1995.DOI
15 
A. Jarndal, F. R. Rakib, and M. A. Alim, “On efficient modeling of drain current for designing high-power GaN HEMT-based circuits”, Journal of Computational Electronics, vol. 23, no. 6, pp. 1355-1367, 2024.DOI
16 
P. Trojovský, and M. Dehghani, “Pelican optimization algorithm: A novel nature-inspired algorithm for engineering applications”, Sensors, vol. 22, no. 3, p. 855, 2022.DOI
17 
A. Majumder, S. Chatterjee, and S. Chatterjee, “Optimization of small-signal model of GaN HEMT by using evolutionary algorithms”, IEEE Microwave and Wireless Components Letters, vol. 27, no. 4, pp. 362-364, 2017.DOI
18 
U. Radhakrishna, P. Choi, and D. A. Antoniadis, “Facilitation of GaN-based RF- and HV-circuit designs using MVS-GaN HEMT compact model”, IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 95-105, 2019.DOI
19 
A. Dasgupta, S. Ghosh, and S. Khandelwal, “ASM-HEMT: Compact model for GaN HEMTs”, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), pp. 495-498, 2015.DOI
20 
S. Husain, A. Jarndal, M. Hashmi, and F. M. Ghannouchi, “Accurate, efficient and reliable small-signal modeling approaches for GaN HEMTs”, IEEE Access, vol. 11, pp. 106833-106846, 2023.DOI
21 
B. L. Ooi, and J. Y. Ma, “Consistent and reliable MESFET parasitic capacitance extraction method”, IEE Proceedings-Microwaves, Antennas and Propagation, vol. 151, no. 1, pp. 81-84, 2004.DOI
22 
J. Zhang, S. Wang, and M. Liu, “An improved GaN P-HEMT small-signal equivalent circuit with its parameter extraction”, Microelectronics Journal, vol. 112, 2021.DOI
23 
B. Zatout, D. Maafri, A. Taibi, Y. Belaroussi, S. Kerai, M. Al Sabbagh, and M. C. E. Yagoub, “An efficient extrinsic capacitances extraction method for small-signal GaN HEMT devices”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 36, no. 6, p. e3117, 2023.DOI
24 
G. Crupi, A. Caddemi, and D. M. M. P. Schreurs, “The large world of FET small-signal equivalent circuits (invited paper): FET Small-Signal Equivalent Circuits”, International Journal of RF and Microwave Computer-Aided Engineering, vol. 26, no. 9, pp. 749-762, 2016.DOI
25 
S. Majumdar, A. Bag, and D. Biswas, “Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate”, Microelectronics Reliability, vol. 78, pp. 389-395, 2017.DOI
26 
P. Ganguly, A. Chakravorty, N. DasGupta, and A. DasGupta, “Extraction and Optimization of Compact Drain Current Model Parameters for GaN High-Electron-Mobility Transistors”, physica status solidi (a), vol. 220, no. 16, p. 2200495, 2023.DOI
27 
Y. Yu, Y. Li, D. Zeng, Y. Hu, and J. Yang, “Permanent magnet synchronous motor demagnetization fault diagnosis based on PCA-ISSA-PNN”, Scientific Reports, vol. 14, no. 1, p. 21921, 2024.DOI
28 
S. Marukatat, “Tutorial on PCA and approximate PCA and approximate kernel PCA”, Artificial Intelligence Review, vol. 56, no. 6, pp. 5445-5477, 2023.DOI
29 
Y. Zhang, and P. Liu, “Research on reactive power optimization based on hybrid osprey optimization algorithm”, Energies, vol. 16, no. 20, p. 7101, 2023.DOI
30 
Y. Yuan, Q. Yang, J. Ren, X. Mu, Z. Wang, Q. Shen, and W. Zhao, “Attack-defense strategy assisted osprey optimization algorithm for PEMFC parameters identification”, Renewable Energy, vol. 225, 2024.DOI
31 
I. Lee, D. Yoon, and Y. Cho, “Estimation of switching losses considering non-linear parasitic capacitances of GaN E-HEMT”, Journal of Power Electronics, vol. 23, no. 8, pp. 1243-1251, 2023.DOI
32 
T. Cho, J. Park, and M. Kang, “Analysis and modeling of intrinsic capacitance in enhancement mode GaN HEMT”, IEEE Journal of the Electron Devices Society, vol. 13, pp. 638-641, 2025.DOI
33 
H. J. Oh, D. I. Oh, and H. S. Kim, “p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC”, Journal of Semiconductor Technology and Science, vol. 25, no. 2, pp. 128-133, 2025.DOI
34 
M. Chae, H. Y. Cha, and H. Kim, “Abnormal temperature and bias dependence of threshold voltage instability in p-GaN/AlGaN/GaN HEMTs”, IEEE Journal of the Electron Devices Society, vol. 12, pp. 581-586, 2024.DOI