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  1. College of Information Engineering, Henan University of Science and Technology, Luoyang, 471023, China



GaN HEMT, intrinsic parameter, principal component analysis (PCA), osprey optimization algorithm (OOA), small-signal model

I. INTRODUCTION

In the semiconductor material system, Gallium Nitride High Electron Mobility Transistor (GaN HEMT) demonstrates significant advantages over other materials due to its high bandgap width, high breakdown field strength, high saturated drift velocity, and relatively high electron mobility [1- 4]. These physical properties endow GaN devices with adaptability to harsh environments such as high temperature, high pressure, high frequency, and high radiation, enabling their extensive applications in aerospace, 5G base stations, radar systems, satellite communications, and other fields. They have become the core driving force for promoting the development of radio-frequency integrated circuit technology [5- 9]. The device model serves as a crucial link between circuits and devices, playing a key role in circuit development and design. A precise device model can significantly shorten the circuit design process and lower research costs.

Extensive research has been conducted on the small-signal model of GaN HEMT to enable rapid and accurate analysis of device characteristics and improve the precision of circuit analysis through high-precision model simulation. Current methods for small-signal modeling include physical structure-based approaches, empirical formula-based methods, and behavioral-level modeling combined with algorithms [10- 12]. Traditional physical structure and empirical formula modeling methods are often time-consuming and yield low accuracy. To address these issues, algorithm-based modeling methods have emerged in recent years, with optimization algorithms commonly used for intrinsic parameter optimization. These optimization algorithms include Particle Swarm Optimization (PSO) [13], Simulated Annealing (SA) [14], Grey Wolf Optimization (GWO) [15], and Pelican Optimization Algorithm (POA) [16]. While these methods can identify optimal solutions within a specified range, they are prone to local optima and have limitations in fully considering the correlations between intrinsic parameters during the extraction process [17].

To solve the above problem, this paper proposes a novel intrinsic parameter extraction method for GaN HEMT devices, integrating the Principal Component Analysis (PCA) algorithm with the Osprey Optimization Algorithm (OOA) for parameter extraction and optimization. PCA, a widely used data dimensionality reduction algorithm, reduces data dimensions to minimize volume while enhancing data correlations. In this study, PCA is employed to strengthen intrinsic parameter correlations, while OOA optimizes the search space through a synergistic mechanism, achieving dual optimization in the modeling process. The PCA-OOA algorithm is applied to extract intrinsic parameters for the GaN HEMT small-signal model across the wide frequency range of 0.5–20.5 GHz. Experimental results demonstrate that this method significantly outperforms traditional techniques in improving S-parameter modeling accuracy.

In recent years, physics-based compact models such as the MIT Virtual Source GaN (MVS-GaN) [18] and the Advanced SPICE Model for HEMTs (ASM-HEMT) [13] have significantly advanced GaN HEMT modeling capabilities. The MVS-GaN model adopts a charge-based virtual-source framework to unify RF and high-voltage circuit design, explicitly accounting for dynamic effects including trapping-induced dispersion, self-heating, and field-plate capacitance transitions [18]. Similarly, ASM-HEMT is a fully analytical surface-potential-based model that incorporates temperature-dependent mobility, nonlinear access resistance, and gate leakage mechanisms (Poole–Frenkel, thermionic emission, and trap-assisted tunneling) to ensure accuracy across DC and RF regimes [19].

In this work, we adopt a semi-empirical equivalent-circuit model because it offers an optimal balance between accuracy, interpretability, and computational efficiency for high-frequency small-signal characterization (0.5–20.5 GHz). The structure of the circuit directly reflects measurable physical features of the GaN HEMT—such as parasitic resistances, inductances, and intrinsic capacitances—enabling intuitive correlation between extracted parameters and device geometry or process variations. This makes the model particularly well suited for RF design validation, process monitoring, and rapid performance assessment, where fast and reliable S-parameter prediction is prioritized over detailed physical emulation.

In this paper, an intrinsic parameter extraction method for GaN HEMT using a combination of Principal Component Analysis and the Osprey Optimization Algorithm is proposed. The article is organized into five main sections. Section II introduces the GaN HEMT small-signal model. Section III presents the methods for extracting parasitic parameters and defining intrinsic parameter ranges. Section IV provides experimental results and conducts error analysis. Section V summarizes the entire article.

II. SMALL-SIGNAL MODEL

The GaN small-signal equivalent circuit model parameters comprise intrinsic and parasitic components [20]. As illustrated in Fig. 1, the GaN HEMT small-signal equivalent circuit model proposed in this study features intrinsic parameters within the dashed boundary and parasitic parameters outside. The nine parasitic parameters include capacitances ($C_{pgs}$, $C_{pds}$, $C_{pgd}$), resistances ($R_g$, $R_s$, $R_d$), and inductances ($L_g$, $L_s$, $L_d$). The intrinsic parameter set totals twelve, encompassing $C_{gs}$ (gate-source capacitance), $C_{gd}$ (gate-drain capacitance), $C_{ds}$ (drain-source capacitance), $R_i$ (intrinsic resistance), $G_m$ (transconductance), $R_{ds}$ (drain output resistance), $R_{gd}$ (gate-drain resistance), $R_{gsf}$ (gate-source differential resistance), $R_{gdf}$ (gate-drain differential resistance), $\tau$ (time delay constant), $R_L$ (source-drain intrinsic resistors), and $L_{ds}$ (drain-source intrinsic inductance).

Fig. 1. GaN HEMT small-signal equivalent circuit modeling.

../../Resources/ieie/JSTS.2026.26.5.313/fig1.png

III. PARAMETERS EXTRACTION

1. Parasitic parameters extraction

The parasitic capacitances are extracted by using the cut-off condition method. When the active device operates in the cut-off region, it exhibits the characteristics of a capacitive passive network [21]. Under two biasing conditions ($V_{GS} = -3\text{ V}$, $V_{DS} = 0\text{ V}$ and $V_{GS} = -2.75\text{ V}$, $V_{DS} = 0\text{ V}$), Y-parameters are measured separately and denoted as $Y_a$ and $Y_b$. After measuring the parameters under these conditions, the values of parasitic capacitances can be extracted according to formulas (1)-(5) [22]:

(1)
$C_c = aC_b,$
(2)
$\alpha = \frac{\text{Imag}(Y_{a,22})-\text{Imag}(Y_{b,22})}{\text{Imag}(Y_{b,12})-\text{Imag}(Y_{a,12})} - 1,$
(3)
$C_{pgs} = \frac{1}{\omega}\text{Imag}(Y_{a,11}+2Y_{a,12}),$
(4)
$C_{pds} = \frac{1}{\omega}\text{Imag}(Y_{a,11}+(1+\alpha)Y_{a,12}),$
(5)
$\text{Im}(Y_{a,12}) = \text{Im}(Y_{a,21}) = -j\omega C_b,$

where $Y_a$ represents the Y-parameters under the bias of $V_{GS} = -3\text{ V}$ and $V_{DS} = 0\text{ V}$, $Y_b$ denotes the Y-parameters under the bias of $V_{GS} = -2.75\text{ V}$ and $V_{DS} = 0\text{ V}$. $C_b$ represents the geometric symmetry between the gate-source and gate-drain, while $C_c$ represents the capacitance between the drain and source depletion layers. The parameter $a$ indicates the relationship between $C_c$ and $C_b$ and addresses the issue that $C_{pds}$ varies significantly with $V_{GS}$. $C_{pgd}$ is the interelectrode coupling capacitance, and its value is very small and can be ignored [23].

After removing the influence of parasitic capacitances, parasitic inductances are extracted under zero-bias conditions ($V_{GS} = 0\text{ V}$, $V_{DS} = 0\text{ V}$). Under this biasing, the device transconductance is approximately zero, and the active device behaves as a passive network [24]. By measuring the Z-parameters in this state, the values of parasitic inductances are extracted using Formulas (6)-(8), which establish the relationship between the measured Z-parameters and the target inductive components.

(6)
$Z_{a,11} = R_g + R_s + \frac{1}{2}R_{ch} + \frac{1}{\omega^2 C_g^2 R_{dy}} + j\omega(L_g + L_s) - j\frac{1}{\omega C_g},$
(7)
$Z_{a,22} = R_d + R_s + R_{ch} + j\omega(L_d + L_s),$
(8)
$Z_{a,12} = Z_{a,21} = R_s + \frac{1}{2}R_{ch} + j\omega L_s,$

where $R_{dy}$ is the differential resistance, $R_{ch}$ is the channel resistance, $C_g$ is the gate Schottky diode capacitance, and $Z_{a,11}$, $Z_{a,12}$, $Z_{a,21}$, $Z_{a,22}$ are the Z-parameters under the biasing conditions. Intermediate variables $A_1$, $A_2$, and $A_3$ are introduced to transform the original formulas into Eqs. (9)-(11) to facilitate parameter extraction. Analysis of the transformed equations reveals that $A_1$, $A_2$, $A_3$, and $\omega^2$ exhibit a linear relationship. The values of parasitic inductances $L_g$, $L_s$, and $L_d$ can be extracted from the slope parameters of each linear equation.

(9)
$A_1 = \omega\text{Im}(Z_{a,11}-Z_{a,12}) = \omega^2 L_g - \frac{1}{C_g},$
(10)
$A_2 = \omega\text{Im}(Z_{a,22}-Z_{a,12}) = \omega^2 L_d,$
(11)
$A_3 = \omega\text{Im} Z_{a,12} = \omega^2 L_s.$

Following the de-embedding of parasitic capacitances and inductances, the reverse cut-off method is employed to extract parasitic resistances [25]. The measurement is conducted under bias conditions of $V_{GS} = -2\text{ V}$ and $V_{DS} = 0\text{ V}$. Where $Z_{b,11}$, $Z_{b,12}$, $Z_{b,21}$, $Z_{b,22}$ are the Z-parameters under the biasing conditions. The explicit mathematical expressions for extracting parasitic resistances are delineated in Eqs. (12)-(14):

(12)
$R_g = \text{Re}(Z_{b,11}-Z_{b,12}),$
(13)
$R_d = \text{Re}(Z_{b,22}-Z_{b,12}),$
(14)
$R_s = \text{Re}(Z_{b,12}) = \text{Re}(Z_{b,21}).$

According to the above formulas, the extraction results of parasitic parameters are shown in Table 1.

Table 1. Parasitic parameter values.

Parasitic parameters

Values

$C_{pgs}$ (fF)

151.145

$C_{pds}$ (fF)

97.712

$L_g$ (pH)

48.078

$L_d$ (pH)

63.074

$L_s$ (pH)

8.812

$R_g$ ($\Omega$)

2.276

$R_d$ ($\Omega$)

9.482

$R_s$ ($\Omega$)

1.586

2. Intrinsic parameter range

After de-embedding the peripheral parasitic parameters, the resulting intrinsic Z-parameters are converted into intrinsic Y-parameters. The mathematical expressions for the intrinsic Y-parameters are detailed in Eqs. (15)-(19) [26]:

(15)
$Y = \begin{bmatrix} Y_{11} & Y_{12} \\ Y_{21} & Y_{22} \end{bmatrix} = \begin{bmatrix} Y_{gs}-Y_{12} & Y_{12} \\ Y_{gm}+Y_{12} & Y_{ds}-Y_{12} \end{bmatrix},$
(16)
$Y_{gs} = Y_{11}+Y_{12} = \frac{1+j\omega C_{gs}R_{gsf}}{R_{gsf}+R_i+j\omega C_{gs}R_{gsf}R_i},$
(17)
$Y_{gd} = -Y_{12} = \frac{1+j\omega C_{gd}R_{gdf}}{R_{gdf}+R_{gd}+j\omega C_{gd}R_{gdf}R_{gd}},$
(18)
$Y_{gm} = Y_{21}-Y_{12} = g_m e^{-j\omega\tau},$
(19)
$Y_{ds} = Y_{12}+Y_{22} = \frac{1+j\omega C_{ds}R_{ds}}{(1+j\omega C_{ds}R_{ds})(j\omega L_{ds}+R_L)+R_{ds}},$

where $Y_{11}$, $Y_{12}$, $Y_{21}$, and $Y_{22}$ denote the intrinsic Y-parameters, $Y_{gs}$ represents the intrinsic gate-source branch Y-parameter, $Y_{gd}$ the intrinsic gate-drain branch Y-parameter, $Y_{gm}$ the intrinsic transconductance branch Y-parameter, $Y_{ds}$ the intrinsic drain-source branch Y-parameter, and $\omega$ the angular frequency.

To facilitate intrinsic parameter extraction, $Y_{gs}$ is processed to derive the expressions for $y_1$ and $y_2$. As delineated in Eqs. (20) and (21), the slope of the fitted $y_1$-$\omega^2$ curve yields the value of $C_{gs}$. With $C_{gs}$ known, the intercept of the $y_1$-$\omega^2$ curve provides $R_{gsf}$, while the slope of the fitted $y_2$-$\omega^2$ curve gives $R_i$.

(20)
$y_1 = \frac{\omega |Y_{gs}|^2}{\text{Im}(Y_{gs})} = \frac{1}{R_{gsf}^2 C_{gs}} + \omega^2 C_{gs},$
(21)
$y_2 = \omega\text{Re}\left(\frac{Y_{gs}}{\text{Im}(Y_{gs})}\right) = \frac{R_{gsf}+R_i}{R_{gsf}^2 C_{gs}} + \omega^2 C_{gs}R_i.$

Through processing $Y_{gd}$, the expressions for $y_3$ and $y_4$ are derived. As presented in Eqs. (22) and (23), the slope of the fitted $y_3$-$\omega^2$ curve determines $C_{gd}$. Once $C_{gd}$ is determined, the intercept of the $y_3$-$\omega^2$ curve yields $R_{gdf}$, and the slope of the fitted $y_4$-$\omega^2$ curve provides $R_{gd}$.

(22)
$y_3 = \frac{\omega |Y_{gd}|^2}{\text{Im}(Y_{gd})} = \frac{1}{R_{gdf}^2 C_{gd}} + \omega^2 C_{gd},$
(23)
$y_3 = \frac{\omega |Y_{gd}|^2}{\text{Im}(Y_{gd})} = \frac{1}{R_{gdf}^2 C_{gd}} + \omega^2 C_{gd}.$

$\tau$ and $G_m$ can be derived from Eqs. (24) and (25):

(24)
$\tau = \frac{1}{\omega}\tan^{-1}\left(-\frac{\text{Im}(Y_{21}-Y_{12})}{\text{Re}(Y_{21}-Y_{12})}\right),$
(25)
$G_m = -\frac{\text{Im}(Y_{21}-Y_{12})}{\sin(\omega\tau)} = \frac{\text{Re}(Y_{21}-Y_{12})}{\cos(\omega\tau)}.$

$R_{ds}$ can be extracted from Eq. (26). Once $R_{ds}$ is obtained, it is substituted into Eq. (27) to extract $C_{ds}$.

(26)
$R_{ds} = \frac{1}{\text{Re}(Y_{12}+Y_{22})},$
(27)
$C_{ds} = \left.\frac{\text{Im}\left(Y_{12}+Y_{22}-\frac{1}{R_{ds}}\right)}{\omega}\right|_{\omega\to +\infty}.$

The imaginary component of $Y_{12}+Y_{21}$ is formulated in Eq. (28). At low frequencies, where $R_L$ is negligible compared to $R_{ds}$, Eq. (28) simplifies to Eq. (29). Leveraging the values of $R_{ds}$ and $C_{ds}$ obtained from Eqs. (26) and (27), $L_{ds}$ is extracted via Eq. (29), and $R_L$ is derived using Eq. (30).

(28)
$\text{Im}(Y_{12}+Y_{21}) = \frac{\omega(R_{ds}^2 C_{ds}-L_{ds})-\omega^3 C_{ds}^2 L_{ds}R_{ds}^2}{(R_{ds}+R_L-\omega^2 L_{ds}R_{ds}C_{ds})^2+\omega^2(L_{ds}+R_L R_{ds}C_{ds})},$
(29)
$\text{Im}(Y_{12}+Y_{21}) = \omega\left(C_{ds}-\frac{L_{ds}}{R_{ds}^2}\right),$
(30)
$\text{Re}(Y_{12}+Y_{22}) = \frac{1+(\omega R_{ds}C_{ds})^2}{R_{ds}} + [1+(\omega R_{ds}C_{ds})^2]R_L.$

This paper focuses on extracting intrinsic parameters for a GaN HEMT device under three distinct biasing conditions: $V_{GS} = 0\text{ V}$, $V_{DS} = 12\text{ V}$; $V_{GS} = -1\text{ V}$, $V_{DS} = 12\text{ V}$; and $V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$. Using Eqs. (15)-(30), the extraction ranges of intrinsic parameters under these conditions are derived, as tabulated in Table 2. These ranges serve as the foundational parameter spaces for subsequent extraction and optimization processes.

Table 2. Extraction ranges of intrinsic parameters.

Elements

$V_{GS} = 0\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -1\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$

$C_{gs}$ (fF)

445~460

500~520

500~510

$R_i$ ($\Omega$)

1.4~2.4

0.4~1.4

1.2~1.7

$R_{gsf}$ (k$\Omega$)

100~160

100~200

210~300

$C_{gd}$ (fF)

50~52

50~51

17.5~20

$R_{gd}$ ($\Omega$)

85~105

75~85

420~490

$R_{gdf}$ (k$\Omega$)

100~160

100~160

240~300

$\tau$ (ps)

0.1~0.3

0.1~0.3

0.1~0.4

$G_m$ (ms)

0.096~0.1

0.0986~0.114

0.1~0.11

$R_{ds}$ ($\Omega$)

350~370

675~695

890~900

$C_{ds}$ (fF)

30~40

40~45

28~33

$R_L$ ($\Omega$)

45~65

40~50

50~55

$L_{ds}$ (pH)

400~460

475~515

510~600

3. Principal Component Analysis and Osprey Optimization Algorithm

3.1 Principal component analysis

PCA is a dimensionality reduction technique that aims to transform original correlated multi-dimensional data into a few uncorrelated principal components. Specifically, PCA achieves this by decomposing the covariance matrix of the dataset to extract orthogonal components, each capturing maximum variance in the data. By selecting components that cumulatively explain most of the original information, PCA balances data fidelity and dimensionality reduction, thereby minimizing computational complexity while preserving critical features [27].

Correlation analysis quantifies the degree of linear dependence between two or more variables, serving as a fundamental tool to identify interdependencies in multi-dimensional datasets. When variables exhibit high collinearity, this analysis allows substituting a representative variable for redundant ones, thereby reducing analytical complexity while preserving data integrity. In SPSS, there are three types of correlation analysis methods: Pearson, Spearman, and Kendall. The Pearson correlation coefficient has several advantages over Spearman and Kendall: it accurately measures the strength and direction of the linear relationship between continuous variables, serving as an important prerequisite for regression analysis. It also provides higher test efficiency when the data meet the assumptions of normal distribution and homoscedasticity. Its squared value can intuitively explain the proportion of variance explained by the variables, and since it is calculated based on the original data values, it fully utilizes the information within the data. It is more suitable for analyzing the linear relationship between continuous variables that follow a normal distribution. This paper adopts the Pearson correlation analysis method [28].

The data processing algorithm in this study is designed to optimize the intrinsic Y-parameters. Prior to optimization, the measured S-parameters undergo de-embedding to derive the intrinsic Y-parameter matrix. The real and imaginary components of the intrinsic Y-parameters ($Y_{11}$, $Y_{12}$, $Y_{21}$, $Y_{22}$) are then separated into eight datasets, which are imported into SPSS for Z-score standardization to eliminate dimensional unit effects. Subsequent PCA is performed, with real and imaginary parts processed separately for each biasing condition. From Figs. 2 to 3, it can be seen that the extracted eigenvalue of the first principal component of the real part or imaginary part is the largest among all principal component eigenvalues and greater than 1. Similarly, the eigenvalues of the first principal component in other cases follow the same pattern. The variance contribution rate and cumulative contribution rate of the first principal component ($F_1$) are 97.335% for the real part and 96.433% for the imaginary part. According to statistical criteria, when a single principal component explains more than 80% of the total variance, it is considered to effectively capture the primary information structure of the original data. Our results show that $F_1$ accounts for over 96% of the total variance in both the real and imaginary parts—far exceeding the commonly used threshold. In contrast, the second principal component ($F_2$) contributes less than 4% in both cases, primarily reflecting measurement noise or minor fluctuations. Therefore, retaining only $F_1$ not only aligns with the PCA dimensionality reduction principle (Kaiser criterion: eigenvalue > 1 and high explained variance) but also significantly reduces optimization complexity while preserving model accuracy. Thus, this paper uses the first principal component to optimize the intrinsic Y-parameters.

Fig. 2. Scree plot of real parts under bias conditions of V GS = 0 V and V DS = 12 V.

../../Resources/ieie/JSTS.2026.26.5.313/fig2.png

Fig. 3. Scree plot of imaginary parts under bias conditions of V GS = 0 V and V DS = 12 V.

../../Resources/ieie/JSTS.2026.26.5.313/fig3.png

$F_1$ and the fitting coefficients $a_{ij}$, $b_{ij}$ can be derived from Eqs. (31) and (32).

(31)
$F_1 = \sum_{i,j=1,2} a_{ij}\text{Re}(Y_{ij}) + b_{ij}\text{Im}(Y_{ij}),$
(32)
$a_{ij}, b_{ij} = \frac{\theta_k}{\sqrt{\lambda_i}},\quad j = 1, 2,\quad k = 1, 2, \dots, 4.$

After $F_1$ is known, Pearson correlation analysis is performed between $F_1$ and each of the eight groups of intrinsic Y-parameter data. The analysis shows that each group of data is significantly correlated with $F_1$, so the Pearson correlation coefficients are the fitting coefficients $c_{ij}$ and $d_{ij}$. With the fitting coefficients $a_{ij}$, $b_{ij}$, $c_{ij}$, and $d_{ij}$ all known, the real and imaginary parts of $Y_{gs}$, $Y_{12}$, $Y_{gm}$, and $Y_{ds}$ derived from Eqs. (16)-(19) are shown in Eqs. (33)-(40):

(33)
$\text{Re}(Y_{gs}) = \frac{R_{gsf}+R_i+\omega^2 C_{gs}^2 R_{gsf}^2 R_i}{(R_{gsf}+R_i)^2+(\omega C_{gs}R_{gsf}R_i)^2},$
(34)
$\text{Im}(Y_{gs}) = \frac{\omega C_{gs}R_{gsf}^2}{(R_{gsf}+R_i)^2+(\omega C_{gs}R_{gsf}R_i)^2},$
(35)
$\text{Re}(Y_{12}) = -\text{Re}(Y_{gd}) = -\frac{R_{gdf}+R_{gd}+\omega^2 C_{gd}^2 R_{gdf}^2 R_{gd}}{(R_{gdf}+R_{gd})^2+(\omega C_{gd}R_{gdf}R_{gd})^2},$
(36)
$\text{Im}(Y_{12}) = -\text{Im}(Y_{gd}) = -\frac{\omega C_{gd}R_{gdf}^2}{(R_{gdf}+R_{gd})^2+(\omega C_{gd}R_{gdf}R_{gd})^2},$
(37)
$\text{Re}(Y_{gm}) = G_m\cos(\omega\tau),$
(38)
$\text{Im}(Y_{gm}) = -G_m\sin(\omega\tau),$
(39)
$\text{Re}(Y_{ds}) = \frac{R_L+R_{ds}+\omega^2 C_{ds}R_{ds}^2 R_L}{(R_L+R_{ds}-\omega^2 C_{ds}R_{ds}R_L)^2+(\omega L_{ds}+\omega C_{ds}R_{ds}R_L)^2},$
(40)
$\text{Im}(Y_{ds}) = \frac{\omega C_{ds}R_{ds}^2-\omega L_{ds}-\omega^3 C_{ds}^2 R_{ds}^2 L_{ds}}{(R_L+R_{ds}-\omega^2 C_{ds}R_{ds}L_{ds})^2+(\omega L_{ds}+\omega C_{ds}R_{ds}R_L)^2}.$

The transformation relationships between $Y_{11}$, $Y_{12}$, $Y_{21}$, $Y_{22}$ and $Y_{gs}$, $Y_{12}$, $Y_{gm}$, $Y_{ds}$ are delineated in Eqs. (41)-(44). Once the real and imaginary components of $Y_{gs}$, $Y_{12}$, $Y_{gm}$, and $Y_{ds}$ are obtained from Eqs. (33)-(40), substituting these values into Eqs. (41)-(44) yields the real and imaginary parts of the intrinsic Y-parameters $Y_{11}$, $Y_{12}$, $Y_{21}$, $Y_{22}$ prior to optimization.

(41)
$Y_{11} = Y_{gs}-Y_{12},$
(42)
$Y_{12} = -Y_{gd},$
(43)
$Y_{21} = Y_{gm}+Y_{12},$
(44)
$Y_{22} = Y_{ds}-Y_{12}.$

Subsequently, the eight expressions for the real and imaginary parts of $Y_{11}$, $Y_{12}$, $Y_{21}$, and $Y_{22}$ are substituted into Eq. (31) to obtain the expression for $F_1$. Substituting the expression of $F_1$ into Eqs. (45) and (46) yields the expressions for the real and imaginary parts of the optimized intrinsic Y-parameters. Finally, substituting the real and imaginary part expressions into Eq. (47) gives the expressions for the optimized intrinsic Y-parameters $Y_{11}$, $Y_{12}$, $Y_{21}$, and $Y_{22}$. These four expressions are the ones to be substituted into the Osprey Optimization Algorithm (OOA) for subsequent calculations.

(45)
$\text{Re}(Y_{ij}) = c_{ij}F_1,\quad i, j = 1, 2,$
(46)
$\text{Im}(Y_{ij}) = d_{ij}F_1,\quad i, j = 1, 2,$
(47)
$Y_{ij} = \text{Re}(Y_{ij}) + j\text{Im}(Y_{ij}),\quad i, j = 1, 2.$

The fitting coefficients $a_{ij}$, $b_{ij}$, $c_{ij}$, and $d_{ij}$ under different bias conditions are shown in Tables 3 and 4.

Table 3. Fitting coefficients aij, bij under three biasing conditions.

Coefficients

$V_{GS} = 0\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -1\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$

$a_{11}$

0.505294

0.499970

0.512651

$b_{11}$

0.504449

0.502817

0.557730

$a_{12}$

-0.504548

-0.501958

-0.511511

$b_{12}$

-0.487076

-0.481838

0.274238

$a_{21}$

0.483221

0.495960

0.462868

$b_{21}$

-0.504878

-0.504181

-0.550641

$a_{22}$

0.506656

0.502090

0.511186

$b_{22}$

0.503341

0.501539

0.557248

Table 4. Fitting coefficients cij, dij under three biasing conditions.

Coefficients

$V_{GS} = 0\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -1\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$

$c_{11}$

0.976998

0.975044

0.998166

$d_{11}$

0.998214

0.997014

0.991750

$c_{12}$

-0.976327

-0.978323

-0.985443

$d_{12}$

-0.929807

-0.902103

0.477317

$c_{21}$

0.961789

0.984532

0.876452

$d_{21}$

-0.990617

-0.987424

-0.979771

$c_{22}$

0.978096

0.977698

0.977358

$d_{22}$

0.996440

0.995358

0.989187

3.2 Osprey optimization algorithm

The Osprey Optimization Algorithm (OOA) is a meta-heuristic optimization framework proposed by Mohammad Dehghani and Pavel Trojovský in October 2022 [29]. Inspired by the strategic foraging behavior of ospreys, OOA emulates the predatory tactics of these cosmopolitan raptors, which specialize in catching live fish weighing 50 grams to 2 kilograms. Equipped with exceptional visual acuity, ospreys detect fish positions in water while soaring 10 to 40 meters above the sea surface. Their predation sequence unfolds in three stages: initial patrolling at a fixed altitude, rapid target approach upon detection, and plunge-diving with talons extended to capture prey. Successful hunts conclude with carrying prey to a perch for feeding. The series of actions from an osprey capturing prey to carrying it to a suitable location for feeding are all based on intelligent natural behaviors, and the Osprey Optimization Algorithm is also created by drawing inspiration from these behaviors. In OOA, the research subject is an osprey population model comprising multiple individuals, with its operational process structured into three core phases [28]:

Step 1: Initialize the population size $N$ and the maximum number of iterations $T$, then initialize the positions of the osprey population using Eqs. (48)-(50) and evaluate the objective function for each individual. Here, $X$ denotes the population position matrix where $X_i$ is the $m$-dimensional position vector of the $i$-th osprey ($m$ being the total number of variable dimensions), $x_{i,j}$ represents the $j$-th dimensional variable with lower and upper bounds $lb_j$ and $ub_j$, $r_{i,j}$ is a random value in [0,1], $F$ is the objective function matrix storing values $F_i$ for each osprey. The position corresponding to the optimal $F_i$ (minimum or maximum, depending on the optimization goal) is designated as the current optimal solution, which is iteratively updated in each iteration.

(48)
$X = \begin{bmatrix} X_1 \\ \vdots \\ X_i \\ \vdots \\ X_N \end{bmatrix}_{N\times m} = \begin{bmatrix} x_{1,1} & \dots & x_{1,j} & \dots & x_{1,m} \\ \vdots & \ddots & \vdots & \ddots & \vdots \\ x_{i,1} & \dots & x_{i,j} & \dots & x_{i,m} \\ \vdots & \ddots & \vdots & \ddots & \vdots \\ x_{N,1} & \dots & x_{N,j} & \dots & x_{N,m} \end{bmatrix}_{N\times m},$
(49)
$x_{i,j} = lb_j + r_{i,j}\cdot(ub_j-lb_j),\quad i = 1, 2, \dots, N,\quad j = 1, 2, \dots, m,$
(50)
$F = \begin{bmatrix} F_1 \\ \vdots \\ F_i \\ \vdots \\ F_N \end{bmatrix}_{N\times 1} = \begin{bmatrix} F(X_1) \\ \vdots \\ F(X_i) \\ \vdots \\ F(X_N) \end{bmatrix}_{N\times 1}.$

Step 2 (Stage 1): Exploration Phase (Osprey Position Recognition and Hunting). In this phase, ospreys first identify the positions of prey on the sea surface and then capture the fish. The second step of the OOA algorithm is established based on this natural behavior, which also enhances the exploration ability of OOA to identify optimal positions and escape local optima. For each osprey, the position of its prey fish is the optimal position, and the set of fish positions for each osprey is listed in Eq. (51):

(51)
$FP_i = \{X_k|k\in\{1,2,\dots,N\}\wedge F_k < F_i\}\cup\{X_{best}\},$

where $FP_i$ represents the fish position set of the $i$-th osprey, and $X_{best}$ denotes the optimal position, which refers to the position corresponding to the optimal objective function value. The osprey randomly selects a fish from the fish position set to attack, and its new position is given by Eq. (52). However, since its position must not exceed the constraints, Eq. (53) is used to constrain its position.

(52)
$x_{i,j}^{P1} = x_{i,j} + r_{i,j}\cdot(SF_{i,j}-I_{i,j}\cdot x_{i,j}),$
(53)
$x_{i,j}^{P1} = \begin{cases} x_{i,j}^{P1}, & lb_j \le x_{i,j}^{P1} \le ub_j, \\ lb_j, & x_{i,j}^{P1} < lb_j, \\ ub_j, & x_{i,j}^{P1} > ub_j, \end{cases}$

where $x_{i,j}^{P1}$ represents the updated position of the $j$-th dimensional variable for the $i$-th osprey in the first phase, $r_{i,j}$ is a random number between [0,1], $SF_{i,j}$ denotes the position of the fish selected by the $i$-th osprey, and $I_{i,j}$ is a random number in [1,2]. If the objective function value of the osprey after position update is better than the previous one, the previous position is replaced; otherwise, the original position remains unchanged, as shown in Eq. (54).

(54)
$X_i = \begin{cases} X_i^{P1}, & F_i^{P1} < F_i, \\ X_i, & \text{else}, \end{cases}$

where $X_i^{P1}$ represents the new position of the $i$-th osprey in the first phase, and $F_i^{P1}$ denotes the objective function value of the $i$-th osprey in the first phase.

Step 3 (Stage 2): Exploitation Phase (Carrying Fish to a Suitable Position). This phase emulates ospreys transporting captured fish to a perch for feeding, thereby enhancing OOA's exploitative capability to conduct local searches and converge toward optimal regions. During this stage, ospreys probabilistically explore feasible positions, with their updated coordinates defined by Eq. (55). To ensure positional validity, Eq. (56) enforces constraints that prevent variables from exceeding predefined bounds. This mechanism mirrors the raptors' strategic selection of feeding sites, balancing local refinement with solution feasibility to drive convergence while adhering to problem constraints.

(55)
$x_{i,j}^{P2} = x_{i,j} + \frac{lb_j+r\cdot(ub_j-lb_j)}{t},\quad i = 1, 2, \dots, N,\quad j = 1, 2, \dots, m,\quad t = 1, 2, \dots, T,$
(56)
$x_{i,j}^{P2} = \begin{cases} x_{i,j}^{P2}, & lb_j \le x_{i,j}^{P2} \le ub_j, \\ lb_j, & x_{i,j}^{P2} < lb_j, \\ ub_j, & x_{i,j}^{P2} > ub_j, \end{cases}$

where $x_{i,j}^{P2}$ represents the new position of the $j$-th dimensional variable for the $i$-th osprey in the second phase, $r$ is a random number between [0, 1], and $t$ denotes the current iteration number. If the objective function value of the osprey after position update is better than the previous one, the previous position is replaced; otherwise, the original position remains unchanged, as shown in Eq. (57):

(57)
$X_i = \begin{cases} X_i^{P2}, & F_i^{P2} < F_i, \\ X_i, & \text{else}, \end{cases}$

where $X_i^{P2}$ represents the new position of the $i$-th osprey in the second phase, and $F_i^{P2}$ denotes the objective function value of the $i$-th osprey in the second phase.

This study utilizes the Osprey Optimization Algorithm (OOA) to extract and optimize intrinsic parameters. Before executing the algorithm, variables, constraints, and the objective function must be input. Specifically, the variables consist of twelve intrinsic parameters: $C_{gs}$, $C_{gd}$, $C_{ds}$, $R_i$, $R_{gd}$, $R_{ds}$, $G_m$, $\tau$, $R_{gdf}$, $R_{gsf}$, $R_L$, and $L_{ds}$. The objective function is defined as the error function [29], which quantifies the discrepancy between measured and simulated values to guide the optimization process.

To ensure full reproducibility of the proposed PCA-assisted OOA calibration framework, we provide complete implementation details as follows. The Osprey Optimization Algorithm (OOA) is configured with a population size of 50 search agents and a maximum of 200 iterations. Parameter bounds are enforced via hard clipping: after each position update, candidate solutions are projected back into the feasible range using element-wise min and max operations with respect to predefined lower and upper bounds. The initial population is generated by uniform random sampling within these bounds, and the MATLAB random number generator seed is fixed to 12345 (via rng(12345)) to guarantee deterministic results. All experiments were repeated over 10 independent runs with identical settings but different random initializations; the relative standard deviation of the final objective function value across these runs was consistently below 0.1%, confirming high stability and robustness of the optimization process. Regarding PCA preprocessing, the intrinsic admittance parameters (Y-parameters) are first decomposed into real and imaginary parts and concatenated into a real-valued feature vector. Each feature dimension is standardized to zero mean and unit variance prior to PCA. Only the first principal component (PC1) is retained to guide the optimization, which accounts for more than 96% of the total variance across all bias conditions. Crucially, the model fitting error is evaluated on the full, uncompressed Y-parameter data, ensuring that the performance metric remains unaffected by dimensionality reduction and that no information loss biases the final assessment.

This study proposes two methodologies for intrinsic parameter extraction and optimization. Method 1 (OOA) employs the Osprey Optimization Algorithm (OOA) for direct parameter extraction and optimization, whereas Method 2 (PCA-OOA) integrates Principal Component Analysis (PCA) and OOA in a two-stage framework: PCA first optimizes the intrinsic Y-parameters, followed by OOA for subsequent parameter extraction and refinement. To ensure comparability, initial conditions for both methods are uniformly set. The workflow of the PCA-OOA algorithm for intrinsic parameter extraction is depicted in Fig. 4, illustrating the sequential integration of PCA for pre-optimization and OOA for fine-tuning, which highlights the synergistic effect of dimensionality reduction and heuristic optimization. The extraction process using the PCA-OOA algorithm is shown in Fig. 4.

Fig. 4. Flowchart of intrinsic parameter extraction for PCA-OOA algorithm.

../../Resources/ieie/JSTS.2026.26.5.313/fig4.png

IV. RESULTS AND ANALYSIS

This study utilizes $2 \times 0.25 \times 125\ \mu\text{m}^2$ GaN HEMT devices from WIN Corporation to systematically validate the effectiveness of the PCA-OOA in small-signal modeling across the 0.5–20.5 GHz frequency band. During experimentation, a Keysight E3631A DC power supply was employed to the device, while a Keysight N522A vector network analyzer was used for S-parameter characterization. To ensure measurement accuracy, the SOLT calibration technique was implemented, and IC-CAP software was utilized for automated parameter acquisition, enabling precise and consistent data collection across the entire frequency range.

Following the completion of experimental data acquisition, a small-signal equivalent circuit model was developed using ADS software to characterize the GaN HEMT device. Under diverse biasing conditions, the PCA-OOA and OOA algorithms were employed to extract the intrinsic parameters of the small-signal model. The detailed extraction results for different bias scenarios are tabulated in Tables 5 and 6, showcasing the comparative performance of the two methodologies.

It is true that several intrinsic parameters extracted by the PCA-OOA method(e.g., $C_{gs}$, $C_{gd}$, $R_{gd}$, $G_m$, $R_{ds}$ and $L_{ds}$) converge precisely to the boundary values defined in Table 2—mostly the lower limits. However, this behavior reflects the actual physical limits of the GaN HEMT under specific bias conditions, rather than an artifact of overly narrow search ranges. For instance, under strong reverse gate bias ($V_{GS} = -2\text{V}$), the gate-drain and drain-source depletion regions expand significantly, driving $C_{gd}$ and $C_{ds}$ toward their theoretical minima. Simultaneously, channel pinch-off suppresses transconductance, causing $G_m$ to reach its lowest physically meaningful value. Similarly, at $V_{GS} = 0\text{V}$ (below the threshold voltage of this E-mode device), the channel is only weakly formed, resulting in relatively low $C_{ds}$ and $R_{ds}$ consistent with the observed convergence to the lower bounds. To verify robustness, we expanded all parameter search ranges by $\pm 15\%$ and re-ran the optimization. The results remained stable, converging to values within 3% of the original boundaries, with negligible change in S-parameter fitting error (<0.2%). This confirms that the current search intervals are sufficiently wide and that the boundary convergence is physically justified.

To validate the model's accuracy, this study configures the frequency range from 0.5 GHz to 20.5 GHz with a 0.2 GHz step in ADS software. The parasitic and intrinsic parameters extracted via the OOA and PCA-OOA algorithms under three distinct bias conditions are separately incorporated into the circuit model to compute the theoretical S-parameters, which are then compared against measured data. The comparative visualizations of model-predicted versus measured S-parameters under the three bias scenarios are presented in Figs. 5-7, enabling direct assessment of the algorithms' performance in capturing the device's electromagnetic behavior across the specified frequency spectrum.

Table 5. Intrinsic parameter values of OOA under three bias conditions.

Elements

$V_{GS} = 0\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -1\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$

$C_{gs}$ (fF)

454.365

512.541

506.667

$R_i$ ($\Omega$)

2.16

1.178

1.443

$R_{gsf}$ (k$\Omega$)

149.948

163.426

235.481

$C_{gd}$ (fF)

51.217

50.142

19.691

$R_{gd}$ ($\Omega$)

101.160

78.044

467.787

$R_{gdf}$ (k$\Omega$)

131.172

116.951

258.553

$\tau$ (ps)

0.2601

0.290

0.274

$G_m$ (ms)

0.098

0.104

0.11

$R_{ds}$ ($\Omega$)

350.431

675

892.282

$C_{ds}$ (fF)

35.918

43.382

32.181

$R_L$ ($\Omega$)

46.261

44.221

50.103

$L_{ds}$ (pH)

402.42

496.034

531.170

Table 6. Intrinsic parameter values of PCA-OOA under three bias conditions.

Elements

$V_{GS} = 0\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -1\text{ V}$, $V_{DS} = 12\text{ V}$

$V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$

$C_{gs}$ (fF)

445

500

500

$R_i$ ($\Omega$)

1.648

0.4

1.229

$R_{gsf}$ (k$\Omega$)

135.528

146.609

210

$C_{gd}$ (fF)

50

50

17.541

$R_{gd}$ ($\Omega$)

85

75

420

$R_{gdf}$ (k$\Omega$)

121.333

122.983

241.402

$\tau$ (ps)

0.274

0.263

0.344

$G_m$ (ms)

0.096

0.0986

0.1

$R_{ds}$ ($\Omega$)

350

675

890

$C_{ds}$ (fF)

30

40

28

$R_L$ ($\Omega$)

60

40

50

$L_{ds}$ (pH)

400

475

510

Fig. 5. S-parameter results under V GS = 0 V, V DS = 12 V bias.

../../Resources/ieie/JSTS.2026.26.5.313/fig5.png

Fig. 6. S-parameter results under V GS = −1 V,V DS = 12 V bias.

../../Resources/ieie/JSTS.2026.26.5.313/fig6.png

Fig. 7. S-parameter results under V GS = −2 V, V DS = 28 V bias.

../../Resources/ieie/JSTS.2026.26.5.313/fig7.png

From Fgis. 5 to 7, it can be seen that the model proposed in this paper has obvious advantages in the fitting effect of $S_{21}$. The overall experimental results show that the overall S-parameter modeling accuracy of PCA-OOA is better than that of the OOA model.

In addition to testing the GaN device under three room-temperature ($T = 25^\circ\text{C}$) bias conditions, this paper also conducts tests under bias conditions of $V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$, $T = 75^\circ\text{C}$ and $V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$, $T = 125^\circ\text{C}$. The experimental data are shown in Tables 7 to 9:

Table 7. aij and bij fitting coefficients at T = 75°C and T = 125°C.

Coefficients

$T = 75^\circ\text{C}$

Coefficients

$T = 125^\circ\text{C}$

$a_{11}$

0.578222

$a_{11}$

0.537859

$b_{11}$

0.574173

$b_{11}$

0.576854

$a_{12}$

-0.577011

$a_{12}$

-0.538917

$b_{12}$

0.137695

$b_{12}$

-0.056968

$a_{21}$

0.037810

$a_{21}$

-0.378072

$b_{21}$

-0.569120

$b_{21}$

-0.577280

$a_{22}$

0.575586

$a_{22}$

0.526643

$b_{22}$

0.572247

$b_{22}$

0.575232

Table 8. cij and dij fitting coefficients at T = 75°C and T = 125°C.

Coefficients

$T = 75^\circ\text{C}$

Coefficients

$T = 125^\circ\text{C}$

$c_{11}$

0.990272

$c_{11}$

0.993883

$d_{11}$

0.990197

$d_{11}$

0.987628

$c_{12}$

-0.984666

$c_{12}$

-0.987558

$d_{12}$

0.312027

$d_{12}$

0.096541

$c_{21}$

0.121444

$c_{21}$

-0.551073

$d_{21}$

-0.975637

$d_{21}$

-0.973413

$c_{22}$

0.977126

$c_{22}$

0.978335

$d_{22}$

0.985066

$d_{22}$

0.981673

Table 9. OOA and PCA-OOA intrinsic parameter values at T = 75°C and T = 125°C.

Elements

OOA, $T = 75^\circ\text{C}$

PCA-OOA, $T = 75^\circ\text{C}$

OOA, $T = 125^\circ\text{C}$

PCA-OOA, $T = 125^\circ\text{C}$

$C_{gs}$ (fF)

437.03

420

397.206

400

$R_i$ ($\Omega$)

2.204

1.562

1.88

2.5

$R_{gsf}$ (k$\Omega$)

250.115

253.32

281.351

300

$C_{gd}$ (fF)

19.712

20

18.604

19

$R_{gd}$ ($\Omega$)

538.646

503.561

490

500

$R_{gdf}$ (k$\Omega$)

246.116

263.443

272.029

300

$\tau$ (ps)

0.214

0.398

0.465

0.429

$G_m$ (ms)

0.1

0.09

0.07

0.08

$R_{da}$ ($\Omega$)

880

880

846.009

860

$C_{ds}$ (fF)

28.431

25

18.951

20

$R_L$ ($\Omega$)

68.522

60

61.396

65

$L_{ds}$ (pH)

587.904

583.36

719.914

750

From Fgis. 8 to 9, it can be observed that the results of the improved PCA-OOA model are better than those of the OOA model, demonstrating the effectiveness of the proposed model.

Fig. 8. S-parameter results under V GS = −2 V, V DS = 28 V, T = 75°C bias.

../../Resources/ieie/JSTS.2026.26.5.313/fig8.png

Fig. 9. S-parameter Results under V GS = −2 V, V DS = 28V, T = 125°C bias.

../../Resources/ieie/JSTS.2026.26.5.313/fig9.png

The error is calculated using formulas (58)-(64):

(58)
$errorS_{11} = \frac{\sum_{k=1}^{101} \frac{||S_{11}|-|S_{33}||}{|\max(S_{33})|}}{101},$
(59)
$errorS_{12} = \frac{\sum_{k=1}^{101} \frac{||S_{12}|-|S_{34}||}{|\max(S_{34})|}}{101},$
(60)
$errorS_{21} = \frac{\sum_{k=1}^{101} \frac{||S_{21}|-|S_{43}||}{|\max(S_{43})|}}{101},$
(61)
$errorS_{22} = \frac{\sum_{k=1}^{101} \frac{||S_{22}|-|S_{44}||}{|\max(S_{44})|}}{101},$
(62)
$error = \frac{\sum(errorS_{11}+errorS_{12}+errorS_{21}+errorS_{22})}{4},$

where $S_{11}$, $S_{12}$, $S_{21}$, $S_{22}$ denote the model S-parameters, while $S_{33}$, $S_{34}$, $S_{43}$, $S_{44}$ represent the measured S-parameters. The frequency range investigated in this study spans 0.5 GHz to 20.5 GHz with a step size of 0.2 GHz, yielding 101 frequency points in total, where $k$ indexes the frequency point.

According to Table 10, it can be observed that under five different bias conditions, the errors of S-parameters obtained by extracting intrinsic parameters using PCA-OOA are smaller than those of the OOA algorithm.

Table 10. Errors of PCA-OOA and OOA under different bias.

Bias

OOA error

PCA-OOA error

$V_{GS} = 0\text{ V}$, $V_{DS} = 12\text{ V}$, $T = 25^\circ\text{C}$

3.4%

2.8%

$V_{GS} = -1\text{ V}$, $V_{DS} = 12\text{ V}$, $T = 25^\circ\text{C}$

3.0%

2.7%

$V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$, $T = 25^\circ\text{C}$

3.3%

2.7%

$V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$, $T = 75^\circ\text{C}$

2.8%

2.3%

$V_{GS} = -2\text{ V}$, $V_{DS} = 28\text{ V}$, $T = 125^\circ\text{C}$

3.4%

2.3%

From the S-parameter comparison diagrams and error tables, it can be seen that under five different bias conditions, the model S-parameters obtained by the PCA-OOA algorithm exhibit higher fitting accuracy and smaller errors compared with the measured S-parameters. This further confirms the superiority of using the PCA-OOA algorithm to extract and optimize intrinsic parameters.

V. CONCLUSION

In this paper, an intrinsic parameter extraction method combining Principal Component Analysis (PCA) and the Osprey Optimization Algorithm (OOA) is proposed. Traditional methods for intrinsic parameter extraction suffer from long computation times, low accuracy, and an inability to account for correlations among intrinsic parameters. To enhance the relationships between these parameters, PCA is employed to process the real and imaginary parts of the intrinsic model Y-parameters. Subsequently, the new intrinsic Y-parameters and the OOA are used to extract the intrinsic parameters. The principles of both the PCA and OOA algorithms are detailed in this work. Experiments using the PCA-OOA and OOA algorithms were conducted under five bias conditions, and the results were compared and analyzed. The experimental results demonstrate that PCA-OOA effectively strengthens the connections among intrinsic parameters, leading to higher fitting accuracy and smaller errors in the S-parameters of the small-signal model. This method provides a novel approach for further developing intrinsic parameter extraction techniques for small-signal models.

While this work focuses on small-signal modeling for RF characterization, the proposed PCA-OOA optimization framework holds significant promise for more complex tasks—particularly the calibration of large-signal compact models. Such models are essential for simulating high-power amplifiers [32], monolithic GaN-based driver ICs [33], and reliability under thermal and bias stress [34], where accurate extraction of nonlinear parameters (e.g., trapping time constants, thermal resistance, and voltage-dependent capacitances) remains challenging. The robustness of PCA-OOA in high-dimensional, noisy, and multi-bias optimization landscapes suggests it could serve as a powerful tool for future large-signal model development.

ACKNOWLEDGEMENTS

This work was supported by the Henan Province Young Backbone Teachers Training Program (Grant No. 2023GGJS045).

CONFLICT OF INTEREST

The authors declare no competing interests.

DATA AVAILABILITY

Data will be made available on request.

REFERENCES

1 
H. Hamza, and A. Jarndal, “Modeling and Simulation of AlPN/GaN High Electron Mobility Transistor”, Advanced Theory and Simulations, vol. 8, no. 4, p. 2401115, 2025.DOI
2 
H. Qin, J. Peng, and Z. Zhang, “Junction temperature prediction method of GaN HEMT power devices based on accurate on - voltage testing”, Energy Reports, vol. 9, pp. 389-395, 2023.DOI
3 
M. B. Yaseen, F. Wan, and F. Siddique, “GaN radiofrequency components and power amplifiers for next-generation 5G communications”, Microelectronic Engineering, vol. 297, 2024.DOI
4 
A. Shukla, and K. P. Ray, “Design and Development of GaN-Based Power Amplifier for Radar Applications”, IETE Technical Review, vol. 41, no. 5, pp. 557-577, 2024.DOI
5 
J. Ajayan, and S. Sreejith, “AlGaN/GaN High electron mobility Transistor (HEMT) based radio frequency power amplifiers for future wireless communication transmitters: Exciting prospects and challenges”, Microelectronic Engineering, vol. 299, 2025.DOI
6 
S. R. Jeon, S. H. Lee, and J. Park, “Experimental and Simulation Study on the Electrical Characteristics of Proton-irradiated AlGaN/GaN HEMT”, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 25, no. 1, pp. 21-29, 2025.DOI
7 
P. Dai, S. Wang, and H. Lu, “Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors”, Micromachines, vol. 15, no. 3, p. 321, 2024.DOI
8 
M. Zhang, H. Wang, L. Yang, B. Hou, M. Wu, and Q. Zhu, “The dual-mode integration of power amplifier and radio frequency switch based on GaN dual-gate HEMTs”, IEEE Journal of the Electron Devices Society, vol. 12, pp. 39-45, 2023.DOI
9 
M. Wang, P. Gao, and F. Shi, “Advanced Packaging Technology of GaN HEMTs Module for High-power and High-frequency Applications: A Review”, IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 14, no. 9, pp. 1537-1550, 2024.DOI
10 
J. Bai, A. Zhang, and J. Cheng, “An improved small-signal model for GaN HEMTs devices”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 37, no. 3, p. e3237, 2024.DOI
11 
Y. Liu, J. Cao, and X. Li, “Switching Loss Model for Fast-Switching GaN HEMT in Half-Bridge Circuit Considering Parasitic Inductance and Temperature Effect”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 71, no. 12, pp. 6128-6137, 2024.DOI
12 
J. Zhang, H. Cai, and S. Wang, “A novel intrinsic-parameters-correlation enhancement technology applied to accurately extract GaN HEMT small-signal model parameters”, Integration, vol. 103, 2025.DOI
13 
H. Shen, W. Zhou, J. Wang, H. Jin, Y. Wu, J. Wang, and J. Liu, “A Novel ANN-PSO Method for Optimizing a Small-Signal Equivalent Model of a Dual-Field-Plate GaN HEMT”, Micromachines, vol. 15, no. 12, p. 1437, 2024.DOI
14 
X. Yao, “A new simulated annealing algorithm”, International Journal of Computer Mathematics, vol. 56, no. 3-4, pp. 161-168, 1995.DOI
15 
A. Jarndal, F. R. Rakib, and M. A. Alim, “On efficient modeling of drain current for designing high-power GaN HEMT-based circuits”, Journal of Computational Electronics, vol. 23, no. 6, pp. 1355-1367, 2024.DOI
16 
P. Trojovský, and M. Dehghani, “Pelican optimization algorithm: A novel nature-inspired algorithm for engineering applications”, Sensors, vol. 22, no. 3, p. 855, 2022.DOI
17 
A. Majumder, S. Chatterjee, and S. Chatterjee, “Optimization of small-signal model of GaN HEMT by using evolutionary algorithms”, IEEE Microwave and Wireless Components Letters, vol. 27, no. 4, pp. 362-364, 2017.DOI
18 
U. Radhakrishna, P. Choi, and D. A. Antoniadis, “Facilitation of GaN-based RF- and HV-circuit designs using MVS-GaN HEMT compact model”, IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 95-105, 2019.DOI
19 
A. Dasgupta, S. Ghosh, and S. Khandelwal, “ASM-HEMT: Compact model for GaN HEMTs”, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), pp. 495-498, 2015.DOI
20 
S. Husain, A. Jarndal, M. Hashmi, and F. M. Ghannouchi, “Accurate, efficient and reliable small-signal modeling approaches for GaN HEMTs”, IEEE Access, vol. 11, pp. 106833-106846, 2023.DOI
21 
B. L. Ooi, and J. Y. Ma, “Consistent and reliable MESFET parasitic capacitance extraction method”, IEE Proceedings-Microwaves, Antennas and Propagation, vol. 151, no. 1, pp. 81-84, 2004.DOI
22 
J. Zhang, S. Wang, and M. Liu, “An improved GaN P-HEMT small-signal equivalent circuit with its parameter extraction”, Microelectronics Journal, vol. 112, 2021.DOI
23 
B. Zatout, D. Maafri, A. Taibi, Y. Belaroussi, S. Kerai, M. Al Sabbagh, and M. C. E. Yagoub, “An efficient extrinsic capacitances extraction method for small-signal GaN HEMT devices”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 36, no. 6, p. e3117, 2023.DOI
24 
G. Crupi, A. Caddemi, and D. M. M. P. Schreurs, “The large world of FET small-signal equivalent circuits (invited paper): FET Small-Signal Equivalent Circuits”, International Journal of RF and Microwave Computer-Aided Engineering, vol. 26, no. 9, pp. 749-762, 2016.DOI
25 
S. Majumdar, A. Bag, and D. Biswas, “Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate”, Microelectronics Reliability, vol. 78, pp. 389-395, 2017.DOI
26 
P. Ganguly, A. Chakravorty, N. DasGupta, and A. DasGupta, “Extraction and Optimization of Compact Drain Current Model Parameters for GaN High-Electron-Mobility Transistors”, physica status solidi (a), vol. 220, no. 16, p. 2200495, 2023.DOI
27 
Y. Yu, Y. Li, D. Zeng, Y. Hu, and J. Yang, “Permanent magnet synchronous motor demagnetization fault diagnosis based on PCA-ISSA-PNN”, Scientific Reports, vol. 14, no. 1, p. 21921, 2024.DOI
28 
S. Marukatat, “Tutorial on PCA and approximate PCA and approximate kernel PCA”, Artificial Intelligence Review, vol. 56, no. 6, pp. 5445-5477, 2023.DOI
29 
Y. Zhang, and P. Liu, “Research on reactive power optimization based on hybrid osprey optimization algorithm”, Energies, vol. 16, no. 20, p. 7101, 2023.DOI
30 
Y. Yuan, Q. Yang, J. Ren, X. Mu, Z. Wang, Q. Shen, and W. Zhao, “Attack-defense strategy assisted osprey optimization algorithm for PEMFC parameters identification”, Renewable Energy, vol. 225, 2024.DOI
31 
I. Lee, D. Yoon, and Y. Cho, “Estimation of switching losses considering non-linear parasitic capacitances of GaN E-HEMT”, Journal of Power Electronics, vol. 23, no. 8, pp. 1243-1251, 2023.DOI
32 
T. Cho, J. Park, and M. Kang, “Analysis and modeling of intrinsic capacitance in enhancement mode GaN HEMT”, IEEE Journal of the Electron Devices Society, vol. 13, pp. 638-641, 2025.DOI
33 
H. J. Oh, D. I. Oh, and H. S. Kim, “p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC”, Journal of Semiconductor Technology and Science, vol. 25, no. 2, pp. 128-133, 2025.DOI
34 
M. Chae, H. Y. Cha, and H. Kim, “Abnormal temperature and bias dependence of threshold voltage instability in p-GaN/AlGaN/GaN HEMTs”, IEEE Journal of the Electron Devices Society, vol. 12, pp. 581-586, 2024.DOI
Jincan Zhang
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Jincan Zhang was born in Xingtai, China, in 1985. He received his M.S. degree from Xi’an University of Technology, Xi’an, China, in 2010. He received a Ph.D. degree from XiDian University, Xi’an, China, in June 2014. Now he is an associate professor in Henan University of Science and Technology, Luoyang, China. His research is focused on modeling of HBTs and design of very high speed integrated circuit.

Jiahao Yao
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Jiahao Yao was born in 2001. He obtained his B.E. degree in engineering from Zhengzhou University of Aeronautics, Zhengzhou, from 2020 to 2024; and is currently pursuing an M.S. degree in engineering at Henan University of Science and Technology. His major field is modeling and simulation of semiconductor devices.

Wenshuai Liu
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Wenshuai Liu was born in 2000. He obtained his B.E. degree in engineering from Weifang University, Weifang, from 2020 to 2024; and is currently pursuing an M.S. degree in engineering at Henan University of Science and Technology. His major field is modeling and simulation of semiconductor devices.

Jingyu Chang
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Jingyu Chang was born in 2001. He obtained his B.Eng. degree from Henan University of Science and Technology, Luoyang, from 2020 to 2024. His research is focused on modeling of GaN HEMT and design of very high speed integrated circuit.

Kexin Wang
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Kexin Wang was born in 2000 in Kaifeng, China. She received her bachelor’s degree from Henan University of Science and Technology in 2024. She is currently pursuing an master’s degree at Henan University of Science and Technology. Her research is focused on modeling of GaN HEMT device.